Secondary electron emission model for photo-emission from metals in the vacuum ultraviolet

This study investigates two secondary electron emission(SEE)models for photoelectric energy distribution curves f(E_(ph),hγ),B,E_(mean),absolute quantum efficiency(AQE),and the mean escape depth of photo-emitted electronsλof metals.The proposed models are developed from the density of states and the theories of photo-emission in the vacuum ultraviolet and SEE,where B is the mean probability that an internal photo-emitted electron escapes into vacuum upon reaching the emission surface of the metal,and E_(mean)is the mean energy of photo-emitted electrons measured from vacuum.The formulas for f(E_(ph),hγ),B,λ,E_(mean),and AQE that were obtained were shown to be correct for the cases of Au at hγ=8.1–11.6 eV,Ni at hγ=9.2–11.6 eV,and Cu at hγ=7.7–11.6 eV.The photoelectric cross sections(PCS)calculated here are analyzed,and it was confirmed that the calculated PCS of the electrons in the conduction band of Au at hγ=8.1–11.6eV,Ni at hγ=9.2–11.6 eV,and Cu at hγ=7.7–11.6 eV are correct.

Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the maximumδandδat 100.0 keV≥E_(po)≥1.0 keV of a NEASLD with the deduced formulae are presented(B is the probability that an internal secondary electron escapes into the vacuum upon reaching the emission surface of the emitter,δis the secondary electron yield,E_(po)is the incident energy of primary electrons and E_(pom)is the E_(po)corresponding to the maximumδ).The parameters obtained here are analyzed,and it can be concluded that several parameters of NEASLDs obtained by the methods presented here agree with those obtained by other authors.The relation between the secondary electron emission and photoemission from a NEAS with large mean escape depth of excited electrons is investigated,and it is concluded that the presented method of obtaining A is more accurate than that of obtaining the corresponding parameter for a NEAS with largeλ_(ph)(λ_(ph)being the mean escape depth of photoelectrons),and that the presented method of calculating B at E_(po)>10.0 keV is more widely applicable for obtaining the corresponding parameters for a NEAS with largeλ_(ph).