Laser‑Induced and MOF‑Derived Metal Oxide/Carbon Composite for Synergistically Improved Ethanol Sensing at Room temperature

Advancements in sensor technology have significantly enhanced atmospheric monitoring.Notably,metal oxide and carbon(MO_(x)/C)hybrids have gained attention for their exceptional sensitivity and room-temperature sensing performance.However,previous methods of synthesizing MO_(x)/C composites suffer from problems,including inhomogeneity,aggregation,and challenges in micropatterning.Herein,we introduce a refined method that employs a metal–organic framework(MOF)as a precursor combined with direct laser writing.The inherent structure of MOFs ensures a uniform distribution of metal ions and organic linkers,yielding homogeneous MO_(x)/C structures.The laser processing facilitates precise micropatterning(<2μm,comparable to typical photolithography)of the MO_(x)/C crystals.The optimized MOF-derived MO_(x)/C sensor rapidly detected ethanol gas even at room temperature(105 and 18 s for response and recovery,respectively),with a broad range of sensing performance from 170 to 3,400 ppm and a high response value of up to 3,500%.Additionally,this sensor exhibited enhanced stability and thermal resilience compared to previous MOF-based counterparts.This research opens up promising avenues for practical applications in MOF-derived sensing devices.

Schottky barrier modulation of bottom contact SnO_(2) thin-film transistors via chloride-based combustion synthesis

The enhanced carrier flow at the interface between Au and SnO_(2)semiconductors,which initially form Schottky contacts,is realized using chloride-based combustion synthesis.Chloride-based combustion sys-tems can achieve chlorine(Cl)doping effects as well as conversion to crystalline SnO_(2)films at clearly lower temperatures(∼250℃)than conventional precursors.Due to the Cl doping effect,the high carrier concentration can induce thin potential barriers at the metal/semiconductor(MS)junctions,resulting in carrier injection by tunneling.As a result,compared to conventional SnO_(2)thin-film transistors,the de-vices fabricated by combustion synthesis exhibit significantly improved electrical performance with field-effect mobility of 6.52 cm 2/Vs(∼13 times),subthreshold swing of 0.74 V/dec,and on/offratio of∼10^(7)below 300℃.Furthermore,because of the enhanced tunneling carriers induced by the narrowed barrier width,the Schottky barriers are significantly reduced from 0.83 to 0.29 eV(65%decrease)at 250℃and from 0.42 to 0.17 eV(60%decrease)at 400℃.Therefore,chloride-based combustion synthesis can con-tribute to developing SnO_(2)-based electronics and flexible devices by achieving both high-quality oxide films and improved current flow at the MS interface with low-temperature annealing.