MOCVD生长GaN膜的光调制反射谱研究

采用光调制反射光谱（PR）研究了（0001）晶向蓝宝石村底上MOCVD方法生长的单晶六角GaN薄膜的室温光学性质。测得六角GaN薄膜的禁带宽度为3．400eV，对PR谱的调制机理进行了分析，发现信号来自缺陷作用下的表面电场调制。光吸收增和光反射谱的测量，得到3．39eV的光学吸收边和3．3eV的反射峰，证实了光调制反射光谱的结果。

Photoreflectance Study of GaN Films on Sapphire Substrate

Photoreflectance was used to study the optical properties of single crystal hexagonal GaN finis on(0001)sapphire substrate grown by metalorganic chemical vapor deposition.The energy gap of GaN was determined as 3.400 eV and the possible origin of the signal was discussed.Optical absorption and reflection were measured.The optical absorption edge of 3.38 eV,and the reilectivity peak at 3.3 eV, confirmed the results of photoreiiectance.

Future Physics Programme of BESⅢ

There has recently been a dramatic renewal of interest in hadron spectroscopy and charm physics. This renaissance has been driven in part by the discovery of a plethora of charmonium-like XYZ states at BESⅢ and B factories, and the observation of an intriguing proton-antiproton threshold enhancement and the possibly related X(1835) meson state at BESⅢ, as well as the threshold measurements of charm mesons and charm baryons. We present a detailed survey of the important topics in tau-charm physics and hadron physics that can be further explored at BESⅢ during the remaining operation period of BEPCⅡ. This survey will help in the optimization of the data-taking plan over the coming years, and provides physics motivation for the possible upgrade of BEPCⅡ to higher luminosity.

Observation of e^+e^-→D_s^+■^((*)0)K^- and study of the P-wave D_s mesons

Studies of e^+e~→D_s^+■^((*)0)K^-and the P-wave charmed-strange mesons are performed based on an e^+e^-collision data sample corresponding to an integrated luminosity of 567 pb^(-1) collected with the BESIII detector at s^(1/2)=4.600 GeV. The processes of e^+e^-→D_s^+■^(*0)K^- and D_s^+■~0K^- are observed for the first time and are found to be dominated by the modes D_s^+D_(s1)(2536)^-and D_s^+D_(s2)~*(2573)^-, respectively. The Born cross sections are measured to be σ~B(e^+e^-→D_s^+■^(*0)K^-) =(10.1±2.3±0.8) pb and σ~B(e^+e^-→D_s^+■~0K^-) =(19.4±2.3± 1.6) pb, and the products of Born cross section and the decay branching fraction are measured to be σ~B(e^+e^-→D_s^+D_(s1)(2536)^-+c.c.)·B(D_(s1)(2536)^-→■^(*0)K^-)=(7.5±1.8±0.7) pb and σ~B(e^+e^-→D_s^+D_(s2)~*(2573)^-+ c.c.)·B(D_(s2)~*(2573)^-→■~0 K^-)=(19.7 ± 2.9 ±2.0) pb. For the D_(s1)(2536)^-and D_(s2)~*(2573)^-mesons, the masses and widths are measured to be M(D_(s1)(2536)^-)=(2537.7±0.5 ±3.1) MeV/c2, Γ(D_(s1)(2536)^-) =(1.7 ±1.2 ±0.6)MeV, and M(D_(s2)~*(2573)^-)=(2570.7±2.0 ±1.7) MeV/c^2, Γ(D_(s2)~*(2573)^-)=(17.2 ±3.6 ±1.1) MeV. The spin-parity of the D_(s2)~*(2573)^-meson is determined to be J^p= 2^+. In addition, the processes e^+e^-→D_s^+■^((*)0)K^-are searched for using the data samples taken at four(two) center-of-mass energies between 4.416(4.527) and 4.575 GeV, and upper limits at the 90% confidence level on the cross sections are determined.

Evidence for the decays of ∧_c^+→∑^+η and ∑^+η’

We study the hadronic decays of ∧c+ to the final states ∑+η and ∑+η’,using an e+e-annihilation data sample of 567 pb-1 taken at a center-of-mass energy of 4.6 GeV with the BESIII detector at the BEPCⅡ collider.We find evidence for the decays ∧c+→∑+η and ∑+η’ with statistical significance of 2.5σ and 3.2σ,respectively.Normalizing to the reference decays ∧c+→∑+π0 and ∑+ω,we obtain the ratios of the branching fractions■and ■to be 0.35±0.16±0.02 and 0.86±0.34±0.04,respectively.The upper limits at the 90% confidence level are set to be■and■.Using BESIII measurements of the branching fractions of the reference decays,we determine B（∧c+→∑+η）=（0.41±0.19±0.05）%（<0.68%）and B（∧c+→∑+η’）=（1.34±0.53 ±0.19）%（<1.9%）.Here,the first uncertainties are statistical and the second systematic.The obtained branching fraction of ∧c+→∑+η is consistent with the previous measurement,and the branching fraction of ∧c+→∑+η’ is measured for the first time.

Enhancement of Sinter Densification of SrO-BaO-Nb_2O_5-SiO_2 Tungsten-Bronze Glass-Ceramics by Doping with P_2O_5

Densification behaviors of SrO-BaO-Nb2O5-SiO2 based glass-ceramics prepared by conventional sintering were investigated with an emphasis on the influence of P2O5 content. Although P2O5 dopant did not modify the surface crystallization mechanism, it resulted in a decrease of the glass transition temperature, which facilitates the viscous glass flow necessary for sintering. However, premature crystallization of （Sr, Ba）Nb2O6 induced by addition of excess amount of P2O5 essentially retarded sintering due to the formation of closed pores in the matrix. The SrO-BaO-Nb2O5-SiO2 glass with 1.0 mol% P2O5 （SBN-1P） showed the best sinter densification, which was accomplished at about 850 ℃.