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Heavy ion energy influence on multiple-cell upsets in small sensitive volumes:from standard to high energies
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作者 yang Jiao Li-Hua Mo +10 位作者 jin-hu yang Yu-Zhu Liu Ya-Nan Yin Liang Wang Qi-Yu Chen Xiao-Yu Yan Shi-Wei Zhao Bo Li You-Mei Sun Pei-Xiong Zhao Jie Liu 《Nuclear Science and Techniques》 SCIE EI CAS CSCD 2024年第5期109-121,共13页
The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area o... The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing effects.Multiple-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node devices.The range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ions.However,ground accelerator experiments have mainly obtained low-energy ion irradiation data.Therefore,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains unclear.In this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM devices.The influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was clarified.The findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques. 展开更多
关键词 28 nm static random access memory(SRAM) Energy effects Heavy ion Multiple-cell upset(MCU) Charge collection Inverse cosine law
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Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs 被引量:1
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作者 Shuai Gao jin-hu yang +7 位作者 Bing Ye Chang Cai Ze He Jie Liu Tian-Qi Liu Xiao-Yu Yan You-Mei Sun Guo-Qing Xiao 《Nuclear Science and Techniques》 SCIE EI CAS CSCD 2022年第9期28-36,共9页
Multiple-bit upsets(MBUs)have become a threat to modern advanced field-programmable gate arrays(FPGAs)applications in radiation environments.Hence,many investigations have been conducted using mediumenergy heavy ions ... Multiple-bit upsets(MBUs)have become a threat to modern advanced field-programmable gate arrays(FPGAs)applications in radiation environments.Hence,many investigations have been conducted using mediumenergy heavy ions to study the effects of MBU radiation.However,high-energy heavy ions(HEHIs)greatly affect the size and percentage of MBUs because their ionizationtrack structures differ from those of medium-energy heavy ions.In this study,the different impacts of high-energy and medium-energy heavy ions on MBUs in 28 nm FPGAs as well as their mechanisms are thoroughly investigated.With the Geant4 calculation,more serious energy effects of HEHIs on MBU scales were successfully demonstrated.In addition,we identified worse MBU responses resulting from lowered voltages.The MBU orientation effect was observed in the radiation of different dimensions.The broadened ionization tracks for tilted tests in different dimensions could result in different MBU sizes.The results also revealed that the ionization tracks of tilted HEHIs have more severe impacts on the MBU scales than mediumenergy heavy ions with much higher linear energy transfer.Therefore,comprehensive radiation with HEHIs is indispensable for effective hardened designs to apply highdensity 28 nm FPGAs in deep space exploration. 展开更多
关键词 FPGA High-energy heavy-ion radiation MBU Ionization track
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Negative Magnetoresistance in Antiferromagnetic Topological Insulator EuSn2As2
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作者 Huan-Cheng ChenZhe-Fcng Lou Yu-Xing Zhou +6 位作者 Qin Chen Bin-lie Xu Shui-Jin Chei Jian-Hua Du jin-hu yang Hang-Dong Wang Ming-Hu Fang 《Chinese Physics Letters》 SCIE CAS CSCD 2020年第4期121-124,共4页
The measurements of magnetization,longitudinal and Hall resistivities are carried out on the intrinsic antiferromagnetic(AFM) topological insulator ElSn2 As2.It is confirmed that our ElSn2 As2 crystal is a heavily hol... The measurements of magnetization,longitudinal and Hall resistivities are carried out on the intrinsic antiferromagnetic(AFM) topological insulator ElSn2 As2.It is confirmed that our ElSn2 As2 crystal is a heavily hole doping A-type AFM metal with the Neel temperature TN=24 K,with a metamagnetic transition from an AFM to a ferromagnetic(FIM) phase occurring at a certain critical magnetic Held for the different Held orientations.Meanwhile,we also find that the carrier concentration does not change with the evolution of magnetic order,indicating that the weak interaction between the localized magnetic moments from Eu2+4f7 orbits and the electronic states near the Fermi level.Although the quantum anomalous Hall effect(AHE) is not observed in our crystals,it is found that a relatively large negative magnetoresistance (-13%) emerges in the AFM phase,and exhibits an exponential dependence upon magnetic Held,whose microscopic origin is waiting to be clarified in future research. 展开更多
关键词 RESISTANCE FERROMAGNETIC MAGNETIC
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