A nitrogen-polarity(N-polarity)GaN-based high electron mobility transistor(HEMT)shows great potential for high-fre-quency solid-state power amplifier applications because its two-dimensional electron gas(2DEG)density ...A nitrogen-polarity(N-polarity)GaN-based high electron mobility transistor(HEMT)shows great potential for high-fre-quency solid-state power amplifier applications because its two-dimensional electron gas(2DEG)density and mobility are mini-mally affected by device scaling.However,the Schottky barrier height(SBH)of N-polarity GaN is low.This leads to a large gate leakage in N-polarity GaN-based HEMTs.In this work,we investigate the effect of annealing on the electrical characteristics of N-polarity GaN-based Schottky barrier diodes(SBDs)with Ni/Au electrodes.Our results show that the annealing time and tem-perature have a large influence on the electrical properties of N-polarity GaN SBDs.Compared to the N-polarity SBD without annealing,the SBH and rectification ratio at±5 V of the SBD are increased from 0.51 eV and 30 to 0.77 eV and 7700,respec-tively,and the ideal factor of the SBD is decreased from 1.66 to 1.54 after an optimized annealing process.Our analysis results suggest that the improvement of the electrical properties of SBDs after annealing is mainly due to the reduction of the inter-face state density between Schottky contact metals and N-polarity GaN and the increase of barrier height for the electron emis-sion from the trap state at low reverse bias.展开更多
Volatile organic compounds(VOCs)are the dominant pollutants in industrial parks.However,they are not generally considered as part of the air quality index(AQI)system,which leads to a biased assessment of pollution in ...Volatile organic compounds(VOCs)are the dominant pollutants in industrial parks.However,they are not generally considered as part of the air quality index(AQI)system,which leads to a biased assessment of pollution in industrial parks.In this study,a supplementary assessment system of AQI-V was established by analyzing VOCs characteristics with vehicle-mounted PTR-TOFMS instrument,correlation analysis and the standards analysis.Three hourly and daily scenarios were considered,and the hierarchical parameter setting was further optimized by field application.The hourly and daily assessments revealed the evaluation factors for the discriminability of different air quality levels,practiced value for regional air quality improvement,and the reservation of general dominant pollutants.Finally,the universality testing in ZPIP successfully recognized most of the peaks,with 54.76%,38.39%and 6.85%for O_(3),VOCs and NO_(2) as the dominant pollutant,and reflected the daily ambient air quality condition,togetherwith the dominant pollutant.The AQI-V systemwith VOCs sub-index is essential for air quality evaluation in industrial parks,which can further provide scientific support to control the pollution of VOCs and the secondary pollutant,therefore significantly improve the air quality in local industrial parks.展开更多
Volatile organic compound(VOC) emission control and source apportionment in small-scale industrial areas have become key topics of air pollution control in China. This study proposed a novel characteristic factor and ...Volatile organic compound(VOC) emission control and source apportionment in small-scale industrial areas have become key topics of air pollution control in China. This study proposed a novel characteristic factor and pattern recognition(CF-PR) model for VOC source apportionment based on the similarity of characteristic factors between sources and receptors.A simulation was carried out in a typical industrial area with the CF-PR model involving simulated receptor samples. Refined and accurate source profiles were constructed through in situ sampling and analysis, covering rubber, chemicals, coating, electronics, plastics, printing, incubation and medical treatment industries. Characteristic factors of n-undecane,styrene, o-xylene and propane were identified. The source apportionment simulation results indicated that the predicted contribution rate was basically consistent with the real contribution rate. Compared to traditional receptor models, this method achieves notable advantages in terms of refinement and timeliness at similar accuracy, which is more suitable for VOC source identification and apportionment in small-scale industrial areas.展开更多
基金This work was supported by the National Key R&D Program of China(Nos.2022YFB3605205,2021YFB3601000,and 2021YFB3601002)the National Natural Science Foundation of China(Nos.U22A20134,62074069,62104078,and 62104079)the Science and Technology Developing Project of Jilin Province(Nos.20220201065GX,20230101053JC,and 20220101119JC).
文摘A nitrogen-polarity(N-polarity)GaN-based high electron mobility transistor(HEMT)shows great potential for high-fre-quency solid-state power amplifier applications because its two-dimensional electron gas(2DEG)density and mobility are mini-mally affected by device scaling.However,the Schottky barrier height(SBH)of N-polarity GaN is low.This leads to a large gate leakage in N-polarity GaN-based HEMTs.In this work,we investigate the effect of annealing on the electrical characteristics of N-polarity GaN-based Schottky barrier diodes(SBDs)with Ni/Au electrodes.Our results show that the annealing time and tem-perature have a large influence on the electrical properties of N-polarity GaN SBDs.Compared to the N-polarity SBD without annealing,the SBH and rectification ratio at±5 V of the SBD are increased from 0.51 eV and 30 to 0.77 eV and 7700,respec-tively,and the ideal factor of the SBD is decreased from 1.66 to 1.54 after an optimized annealing process.Our analysis results suggest that the improvement of the electrical properties of SBDs after annealing is mainly due to the reduction of the inter-face state density between Schottky contact metals and N-polarity GaN and the increase of barrier height for the electron emis-sion from the trap state at low reverse bias.
基金supported by the Key Research and Development Program of Zhejiang Province(Nos.2021C03165,2021C03178)the public welfare project of Zhejiang Province Grant numbers(No.LGF21B060002).
文摘Volatile organic compounds(VOCs)are the dominant pollutants in industrial parks.However,they are not generally considered as part of the air quality index(AQI)system,which leads to a biased assessment of pollution in industrial parks.In this study,a supplementary assessment system of AQI-V was established by analyzing VOCs characteristics with vehicle-mounted PTR-TOFMS instrument,correlation analysis and the standards analysis.Three hourly and daily scenarios were considered,and the hierarchical parameter setting was further optimized by field application.The hourly and daily assessments revealed the evaluation factors for the discriminability of different air quality levels,practiced value for regional air quality improvement,and the reservation of general dominant pollutants.Finally,the universality testing in ZPIP successfully recognized most of the peaks,with 54.76%,38.39%and 6.85%for O_(3),VOCs and NO_(2) as the dominant pollutant,and reflected the daily ambient air quality condition,togetherwith the dominant pollutant.The AQI-V systemwith VOCs sub-index is essential for air quality evaluation in industrial parks,which can further provide scientific support to control the pollution of VOCs and the secondary pollutant,therefore significantly improve the air quality in local industrial parks.
基金supported by Key Research and Development Program of Zhejiang Province (2021C03178, 2021C03165)。
文摘Volatile organic compound(VOC) emission control and source apportionment in small-scale industrial areas have become key topics of air pollution control in China. This study proposed a novel characteristic factor and pattern recognition(CF-PR) model for VOC source apportionment based on the similarity of characteristic factors between sources and receptors.A simulation was carried out in a typical industrial area with the CF-PR model involving simulated receptor samples. Refined and accurate source profiles were constructed through in situ sampling and analysis, covering rubber, chemicals, coating, electronics, plastics, printing, incubation and medical treatment industries. Characteristic factors of n-undecane,styrene, o-xylene and propane were identified. The source apportionment simulation results indicated that the predicted contribution rate was basically consistent with the real contribution rate. Compared to traditional receptor models, this method achieves notable advantages in terms of refinement and timeliness at similar accuracy, which is more suitable for VOC source identification and apportionment in small-scale industrial areas.