It is observed that the radiative recombination rate in InGaN-based light-emitting diode decreases with lattice temperature increasing.The effect of lattice temperature on the radiative recombination rate tends to be ...It is observed that the radiative recombination rate in InGaN-based light-emitting diode decreases with lattice temperature increasing.The effect of lattice temperature on the radiative recombination rate tends to be stable at high injection.Thus,there should be an upper limit for the radiative recombination rate in the quantum well with the carrier concentration increasing,even under the same lattice temperature.A modified and easily used ABC-model is proposed.It describes that the slope of the radiative recombination rate gradually decreases to zero,and further reaches a negative value in a small range of lattice temperature increasing.These provide a new insight into understanding the dependence of the radiative recombination rate on lattice temperature and carrier concentration in InGaN-based light-emitting diode.展开更多
A blue emission originated from In GaN/GaN superlattice(SL) interlayer is observed in the yellow LEDs with V-pits embedded in the quantum wells(QWs), revealing that sufficient holes have penetrated through the QWs...A blue emission originated from In GaN/GaN superlattice(SL) interlayer is observed in the yellow LEDs with V-pits embedded in the quantum wells(QWs), revealing that sufficient holes have penetrated through the QWs into SLs far away from the p-type layer. In the V-pits embedded LEDs, hole transport has two paths: via the flat c-plane region or via the sidewalls of V-pits. It is proved that the holes in SLs are injected from the sidewalls of V-pits, and the transportation process is significantly affected by working temperature, current density, and the size of V-pits. Four motion possibilities are discussed when the holes flow via the sidewalls. All these may contribute to a better understanding of hole transport and device design.展开更多
Phonon sidebands in the electrolumiescence(EL) spectra of InGaN/GaN multiple quantum well blue light emitting diodes are investigated. S-shaped injection current dependence of the energy spacing(ES) between the zero-p...Phonon sidebands in the electrolumiescence(EL) spectra of InGaN/GaN multiple quantum well blue light emitting diodes are investigated. S-shaped injection current dependence of the energy spacing(ES) between the zero-phonon and first-order phonon-assisted luminescence lines is observed in a temperature range of 100–150 K.The S-shape is suppressed with increasing temperature from 100 to 150 K, and vanishes at temperature above200 K. The S-shaped injection dependence of ES at low temperatures could be explained by the three stages of carrier dynamics related to localization states:(i) carrier relaxation from shallow into deep localization states,(ii) band filling of shallow and deep localization states, and(iii) carrier overflow from deep to shallow localization states and to higher energy states. The three stages show strong temperature dependence. It is proposed that the fast change of the carrier lifetime with temperature is responsible for the suppression of S-shaped feature.The proposed mechanisms reveal carrier recombination dynamics in the EL of InGaN/GaN MQWs at various injection current densities and temperatures.展开更多
GaN-based yellow light-emitting diodes(LEDs) on Si substrates are aged at a direct current density of 50 A/cm^2 for500 h. After the aging process, it can be found that the LEDs have a stable electrical property but th...GaN-based yellow light-emitting diodes(LEDs) on Si substrates are aged at a direct current density of 50 A/cm^2 for500 h. After the aging process, it can be found that the LEDs have a stable electrical property but their light output power is decayed by 4.01% at 35 A/cm^2. Additionally, the aging mechanism of GaN-based yellow LED is analyzed. It is found that the decay of light output power may be attributed to the following two reasons: one is the increase of Shockley–Rrad–Hall recombination and the other is the change of the transport path of holes via V-pits after aging, which may induce the radiative recombination current to decrease. In this paper, not only the aging mechanism of GaN-based yellow LED is investigated, but also a new possible research direction in LED aging is given.展开更多
Inhomogeneous electroluminescence(EL)of InGaN green LEDs grown on mesh-patterned Si(111)substrate had been investigated.Sample with n-AlGaN inserted between the pre-strained layers and the first quantum well showed th...Inhomogeneous electroluminescence(EL)of InGaN green LEDs grown on mesh-patterned Si(111)substrate had been investigated.Sample with n-AlGaN inserted between the pre-strained layers and the first quantum well showed the inhomogeneous EL in the low current density range.Near-field EL emission intensity distribution images depicted that inhomogeneity in the form of premature turn-on at the periphery of the LED chip,results in stronger emission intensity at the edges.This premature turn-on effect significantly reduces the luminous efficacy and higher ideality factor value due to locally current crowding effect.Raman measurement and fluorescence microscopy results indicated that the partially relaxed in-plane stress at the edge of the window region acts as a parasitic diode with a smaller energy band gap,which is a source of edge emission.Numerical simulations showd that the tilted triangular n-AlGaN functions like a forward-biased Schottky diode,which not only impedes carrier transport,but also contributes a certain ideality factor.展开更多
In GaN-based green light-emitting diodes(LEDs) with and without Mg-preflow before the growth of p-Al GaN electron blocking layer(EBL) are investigated experimentally.A higher Mg doping concentration is achieved in...In GaN-based green light-emitting diodes(LEDs) with and without Mg-preflow before the growth of p-Al GaN electron blocking layer(EBL) are investigated experimentally.A higher Mg doping concentration is achieved in the EBL after Mg-preflow treatment,effectively alleviating the commonly observed efficiency collapse and electrons overflowing at cryogenic temperatures.However,unexpected decline in quantum efficiency is observed after Mg-preflow treatment at room temperature.Our conclusions are drawn such that the efficiency decline is probably the result of different emission positions.Higher Mg doping concentration in the EBL after Mg-preflow treatment will make it easier for a hole to be injected into multiple quantum wells with emission closer to pGaN side through the(8-plane rather than the V-shape pits,which is not favorable to luminous efficiency due to the preferred occurrence of accumulated strain relaxation and structural defects in upper QWs closer to p-GaN.Within this framework,apparently disparate experimental observations regarding electroluminescence properties,in this work,are well reconciled.展开更多
In GaN-based green light-emitting diodes(LEDs) with different green quantum well numbers grown on Si(111)substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits ap...In GaN-based green light-emitting diodes(LEDs) with different green quantum well numbers grown on Si(111)substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits appear in the AFM images with the green quantum well number increasing from 5 to 9, and results in larger reverse-bias leakage current. Meanwhile, in the case of the sample with the number from 5 to 7 then to 9, the external quantum efficiency increases firstly, and then decreases. These phenomena may be related to the size of V-shaped pits in the active area and the distribution of electrons and holes in the active area caused by V-shaped pits. The optimal number of green quantum wells is determined to be 7.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51602141,11674147,61604066,11604137,and 21405076)the National Key Research and Development Project of China(Grant Nos.2016YFB0400600 and 2016YFB0400601)the Key Research and Development Project of Jiangxi Province,China(Grant No.20171BBE50052)。
文摘It is observed that the radiative recombination rate in InGaN-based light-emitting diode decreases with lattice temperature increasing.The effect of lattice temperature on the radiative recombination rate tends to be stable at high injection.Thus,there should be an upper limit for the radiative recombination rate in the quantum well with the carrier concentration increasing,even under the same lattice temperature.A modified and easily used ABC-model is proposed.It describes that the slope of the radiative recombination rate gradually decreases to zero,and further reaches a negative value in a small range of lattice temperature increasing.These provide a new insight into understanding the dependence of the radiative recombination rate on lattice temperature and carrier concentration in InGaN-based light-emitting diode.
基金Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400600 and2016YFB0400601the National Natural Science Foundation of China under Grant Nos 61334001,61604066,21405076,11604137,11674147,51602141 and 61704069the Key Research and Development Program of Jiangxi Province of China under Grant No20165ABC28007
文摘A blue emission originated from In GaN/GaN superlattice(SL) interlayer is observed in the yellow LEDs with V-pits embedded in the quantum wells(QWs), revealing that sufficient holes have penetrated through the QWs into SLs far away from the p-type layer. In the V-pits embedded LEDs, hole transport has two paths: via the flat c-plane region or via the sidewalls of V-pits. It is proved that the holes in SLs are injected from the sidewalls of V-pits, and the transportation process is significantly affected by working temperature, current density, and the size of V-pits. Four motion possibilities are discussed when the holes flow via the sidewalls. All these may contribute to a better understanding of hole transport and device design.
基金Supported by the National Science Foundation for Young Scientists of China under Grant No 11604137the Jiangxi Province Postdoctoral Science Foundation Funded Project under Grant No 2015KY32the State Key Program of Research and Development of China under Grant Nos 2016YFB040060 and 2016YFB0400601
文摘Phonon sidebands in the electrolumiescence(EL) spectra of InGaN/GaN multiple quantum well blue light emitting diodes are investigated. S-shaped injection current dependence of the energy spacing(ES) between the zero-phonon and first-order phonon-assisted luminescence lines is observed in a temperature range of 100–150 K.The S-shape is suppressed with increasing temperature from 100 to 150 K, and vanishes at temperature above200 K. The S-shaped injection dependence of ES at low temperatures could be explained by the three stages of carrier dynamics related to localization states:(i) carrier relaxation from shallow into deep localization states,(ii) band filling of shallow and deep localization states, and(iii) carrier overflow from deep to shallow localization states and to higher energy states. The three stages show strong temperature dependence. It is proposed that the fast change of the carrier lifetime with temperature is responsible for the suppression of S-shaped feature.The proposed mechanisms reveal carrier recombination dynamics in the EL of InGaN/GaN MQWs at various injection current densities and temperatures.
基金Project supported by the National Natural Science Foundation for Young Scientists of China(Grant Nos.61704069 and 51602141)the National Key Research and Development Program of China(Grant No.2016YFB0400601)
文摘GaN-based yellow light-emitting diodes(LEDs) on Si substrates are aged at a direct current density of 50 A/cm^2 for500 h. After the aging process, it can be found that the LEDs have a stable electrical property but their light output power is decayed by 4.01% at 35 A/cm^2. Additionally, the aging mechanism of GaN-based yellow LED is analyzed. It is found that the decay of light output power may be attributed to the following two reasons: one is the increase of Shockley–Rrad–Hall recombination and the other is the change of the transport path of holes via V-pits after aging, which may induce the radiative recombination current to decrease. In this paper, not only the aging mechanism of GaN-based yellow LED is investigated, but also a new possible research direction in LED aging is given.
基金the National Key Research and Development Program of China(Grant Nos.2017YFB0403105 and 2017YFB0403100)the National Natural Science Foundation of China(Grant Nos.11674147,61604066,51602141,and 11604137).
文摘Inhomogeneous electroluminescence(EL)of InGaN green LEDs grown on mesh-patterned Si(111)substrate had been investigated.Sample with n-AlGaN inserted between the pre-strained layers and the first quantum well showed the inhomogeneous EL in the low current density range.Near-field EL emission intensity distribution images depicted that inhomogeneity in the form of premature turn-on at the periphery of the LED chip,results in stronger emission intensity at the edges.This premature turn-on effect significantly reduces the luminous efficacy and higher ideality factor value due to locally current crowding effect.Raman measurement and fluorescence microscopy results indicated that the partially relaxed in-plane stress at the edge of the window region acts as a parasitic diode with a smaller energy band gap,which is a source of edge emission.Numerical simulations showd that the tilted triangular n-AlGaN functions like a forward-biased Schottky diode,which not only impedes carrier transport,but also contributes a certain ideality factor.
基金Supported by the National Key R&D Program of China under Grant Nos 2016YFB0400600 and 2016YFB0400601the State Key Program of the National Natural Science of China under Grant No 61334001+2 种基金the Key R&D Program of Jiangxi Province under Grant No 20165ABC28007the Natural Science Foundation of Jiangxi Province under Grant No 20151BAB207053the National Natural Science Foundation of China under Grant No 21405076
文摘In GaN-based green light-emitting diodes(LEDs) with and without Mg-preflow before the growth of p-Al GaN electron blocking layer(EBL) are investigated experimentally.A higher Mg doping concentration is achieved in the EBL after Mg-preflow treatment,effectively alleviating the commonly observed efficiency collapse and electrons overflowing at cryogenic temperatures.However,unexpected decline in quantum efficiency is observed after Mg-preflow treatment at room temperature.Our conclusions are drawn such that the efficiency decline is probably the result of different emission positions.Higher Mg doping concentration in the EBL after Mg-preflow treatment will make it easier for a hole to be injected into multiple quantum wells with emission closer to pGaN side through the(8-plane rather than the V-shape pits,which is not favorable to luminous efficiency due to the preferred occurrence of accumulated strain relaxation and structural defects in upper QWs closer to p-GaN.Within this framework,apparently disparate experimental observations regarding electroluminescence properties,in this work,are well reconciled.
基金Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400601the National Natural Science Foundation of China under Grant Nos 61704069,11674147,61604066,51602141 and 11604137
文摘In GaN-based green light-emitting diodes(LEDs) with different green quantum well numbers grown on Si(111)substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits appear in the AFM images with the green quantum well number increasing from 5 to 9, and results in larger reverse-bias leakage current. Meanwhile, in the case of the sample with the number from 5 to 7 then to 9, the external quantum efficiency increases firstly, and then decreases. These phenomena may be related to the size of V-shaped pits in the active area and the distribution of electrons and holes in the active area caused by V-shaped pits. The optimal number of green quantum wells is determined to be 7.