For designing low-impedance magnetic tunnel junctions(MTJs),it has been found that tunneling magnetoresistance strongly correlates with the insulating barrier thickness,imposing a fundamental problem about the relatio...For designing low-impedance magnetic tunnel junctions(MTJs),it has been found that tunneling magnetoresistance strongly correlates with the insulating barrier thickness,imposing a fundamental problem about the relationship between spin polarization of ferromagnet and the insulating barrier thickness in MTJs.Here,we investigate the influence of alumina barrier thickness on tunneling spin polarization(TSP)through a combination of theoretical calculations and experimental verification.Our simulating results reveal a significant impact of barrier thickness on TSP,exhibiting an oscillating decay of TSP with the barrier layer thinning.Experimental verification is realized on FeNi/AlO_(x)/Al superconducting tunnel junctions to directly probe the spin polarization of FeNi ferromagnet using Zeeman-split tunneling spectroscopy technique.These findings provide valuable insights for designs of high-performance spintronic devices,particularly in applications such as magnetic random access memories,where precise control over the insulating barrier layer is crucial.展开更多
This paper presents a new method of determining Ge in AuGe alloys by potassium iodate(KIO3)potentiometric titration when Ge(Ⅱ)and Au(0)are simultaneously reduced from Ge(Ⅳ)and Au(Ⅲ)by sodium hypophosphite rather th...This paper presents a new method of determining Ge in AuGe alloys by potassium iodate(KIO3)potentiometric titration when Ge(Ⅱ)and Au(0)are simultaneously reduced from Ge(Ⅳ)and Au(Ⅲ)by sodium hypophosphite rather than by distillation separation.The influences of such conditions as the reduction acidity,the dosage of sodium hypophosphite and the reduction time on the determination of Ge were studied.Ge in AuGe alloys such as AuGe_(12),AuGeNi_(12-2),AuAgGe_(18.8-12.5),and AuAgGeNi_(43.8-6-0.2)was measured with the relative standard deviation(RSD)of 0.10%-0.31%and the recoveries of added standard Ge in sample of 99.40%-100.40%under the conditions of 0.40-0.80 mol·L^(-1)HCl,3.3 mol·L^(-1)H^(3)PO^(4),15 g sodium hypophosphite,and reduction time of40 min.The new method presented is of high accuracy in results,good stability and sensibility in end-point,and easy operation and strong selectivity of determination.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.11774303 and 11574373)the financial support from“15th Graduate Research Innovation Project”from Yunnan Universityfinancial support from the Joint Fund of Yunnan Provincial Science and Technology Department(Grant No.2019FY003008)。
文摘For designing low-impedance magnetic tunnel junctions(MTJs),it has been found that tunneling magnetoresistance strongly correlates with the insulating barrier thickness,imposing a fundamental problem about the relationship between spin polarization of ferromagnet and the insulating barrier thickness in MTJs.Here,we investigate the influence of alumina barrier thickness on tunneling spin polarization(TSP)through a combination of theoretical calculations and experimental verification.Our simulating results reveal a significant impact of barrier thickness on TSP,exhibiting an oscillating decay of TSP with the barrier layer thinning.Experimental verification is realized on FeNi/AlO_(x)/Al superconducting tunnel junctions to directly probe the spin polarization of FeNi ferromagnet using Zeeman-split tunneling spectroscopy technique.These findings provide valuable insights for designs of high-performance spintronic devices,particularly in applications such as magnetic random access memories,where precise control over the insulating barrier layer is crucial.
基金the National High Technology Research and Development Program of China (Nos.2012AA063203 and 2012AA063207)。
文摘This paper presents a new method of determining Ge in AuGe alloys by potassium iodate(KIO3)potentiometric titration when Ge(Ⅱ)and Au(0)are simultaneously reduced from Ge(Ⅳ)and Au(Ⅲ)by sodium hypophosphite rather than by distillation separation.The influences of such conditions as the reduction acidity,the dosage of sodium hypophosphite and the reduction time on the determination of Ge were studied.Ge in AuGe alloys such as AuGe_(12),AuGeNi_(12-2),AuAgGe_(18.8-12.5),and AuAgGeNi_(43.8-6-0.2)was measured with the relative standard deviation(RSD)of 0.10%-0.31%and the recoveries of added standard Ge in sample of 99.40%-100.40%under the conditions of 0.40-0.80 mol·L^(-1)HCl,3.3 mol·L^(-1)H^(3)PO^(4),15 g sodium hypophosphite,and reduction time of40 min.The new method presented is of high accuracy in results,good stability and sensibility in end-point,and easy operation and strong selectivity of determination.
