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Asymptotic of the Solutions to the Initial Boundary Value Problem for the Diffusion Equations for Semiconductors 被引量:1
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作者 WANGWen-bin liushu-mei 《Chinese Quarterly Journal of Mathematics》 CSCD 北大核心 2005年第2期185-191,共7页
In this paper, we study the asymptotic behavior of the solutions to the initial boundary value problem for unipolar drift diffusion equations for semiconductors. Under the proper assumptions on doping profile and init... In this paper, we study the asymptotic behavior of the solutions to the initial boundary value problem for unipolar drift diffusion equations for semiconductors. Under the proper assumptions on doping profile and initial value, we prove that the smooth solutions to these evolutionary problems tend to the unique stationary solution exponentially as time tends to infinity. 展开更多
关键词 drift diffusion equations initial boundary value problems asymptotic behavior
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