Surface modification toward luminescent and stable silica-coated quantum dots color filter

A highly pixelated and luminescent silica-coated quantum dot color filter(QDCF)was achieved by surface conjugation with epoxy functional group.Epoxy-functionalized silica-coated quantum dots(QDs)can be thoroughly mixed with SU-8 photoresist up to 25 wt.%without aggregation.The quantum yield(QY)of the silica-coated QDCF can be significantly improved from 19.3%to 36.5%after epoxy treatment.The pristine QDCF experienced a 40%QY decrease,while the epoxied silica-coated QDCF maintained its luminescence even after irradiation(300 mW cm 2@450 nm)for over 25 days.The well-controlled epoxy cap plays a critical role in attaining the ideal optical properties of the QDCF.

Tailoring electrical property of the low-temperature processed SnO_2 for high-performance perovskite solar cells

Herein, we for the first time doped Nb^5+into the low-temperature(<100°C) SnO2sol-gel route to tailor the electrical property of SnO2 layers and the band alignment between SnO2 and the normally used mixed perovskites. The results revealed that proper Nb5+doping increased the conductivity of the SnO2 electron transport layer(ETL), and the conduction band(CB) level of the SnO2 ETL was shifted down to approach the CB level of perovskites, which facilitated the electron injection from perovskite to SnO2, accelerated the charge transport, and reduced the non-radiative recombination, leading to improved power conversion efficiency from18.06% to 19.38%. The Nb^5+doping process provided an efficient route for fabricating high-efficiency perovskite solar cells(PSCs) at a temperature lower than 100°C, and promoted the commercialization progress of PSCs.

Preparation of organic thin-film field effect transistor

The organic thin-film field effect transistor was prepared through vacuum deposition by using teflon as dielectric material. Indium-tin-oxide acted as the source and drain electrodes. Copper phthalocyanine and teflon were used as the semiconductor layer and dielectric layer, respectively. The gate electrode was made of Ag. The channel length between the source and drain was 50μm. After preparing the source and drain electrodes by lithography, the copper phthalocyanine layer, teflon layer and Ag layer were prepared by vacuum deposition sequentially. The field effect electron mobility of the device reached 1.1×10-6 cm2/(V·s), and the on/off current ratio reached 500.

Solution-Processed Graphene Composite Films as Freestanding Platinum-Free Counter Electrodes for Bendable Dye Sensitized Solar Cells

Sulfuric acid-treated poly（3,4-ethylenedioxythiophene）：poly（styrenesulfonate）/less-defective reduced graphene oxide （ST-PEDOT：PSS/L-rGO） composite films were prepared via a solution-processing route and used as the counter electrodes of dye sensitized solar cells （DSSCs）. These platinum （Pt）- and transparent conductive oxide （TCO）-free counter electrodes exhibited strong catalytic activity and excellent flexibility, showing no obvious change in their sheet resistances after 10000 cycles of bending. The integrated quasi-solid-state DSSC device with a TiO2 nanotube/Ti mesh photoanode and a ST-PEDOT：PSS/L-rGO counter electrode exhibited an energy conversion efficiency （~/） of about 1.8%. It also displayed an excellent mechanical stability and durability after bending for 1000 cycles at a small curvature radius of 10 mm. The high flexibility, low cost and efficient catalytic activity make ST-PEDOT：PSS/L-rGO composite films promising counter electrodes for flexible DSSCs.