Numerous studies have shown that cell replacement therapy can replenish lost cells and rebuild neural circuitry in animal models of Parkinson’s disease.Transplantation of midbrain dopaminergic progenitor cells is a p...Numerous studies have shown that cell replacement therapy can replenish lost cells and rebuild neural circuitry in animal models of Parkinson’s disease.Transplantation of midbrain dopaminergic progenitor cells is a promising treatment for Parkinson’s disease.However,transplanted cells can be injured by mechanical damage during handling and by changes in the transplantation niche.Here,we developed a one-step biomanufacturing platform that uses small-aperture gelatin microcarriers to produce beads carrying midbrain dopaminergic progenitor cells.These beads allow midbrain dopaminergic progenitor cell differentiation and cryopreservation without digestion,effectively maintaining axonal integrity in vitro.Importantly,midbrain dopaminergic progenitor cell bead grafts showed increased survival and only mild immunoreactivity in vivo compared with suspended midbrain dopaminergic progenitor cell grafts.Overall,our findings show that these midbrain dopaminergic progenitor cell beads enhance the effectiveness of neuronal cell transplantation.展开更多
In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modula...In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modulation effect of the 2-D electron gas(2DEG,the back gate)beneath the 2-D hole gas(2DHG)channel.SA-BGITs with a gate length of 1μm have achieved an impressive peak drain current(I_(D,MAX))of 9.9 m A/mm.The fabricated SA-BGITs also possess a threshold voltage of 0.15 V,an exceptionally minimal threshold hysteresis of 0.2 V,a high switching ratio of 10~7,and a reduced ON-resistance(RON)of 548Ω·mm.Additionally,the SA-BGITs exhibit a steep sub-threshold swing(SS)of 173 mV/dec,further highlighting their suitability for integration into Ga N logic circuits.展开更多
基金supported by the National Key Research and Development Program of China,Nos.2017YFE0122900(to BH),2019YFA0110800(to WL),2019YFA0903802(to YW),2021YFA1101604(to LW),2018YFA0108502(to LF),and 2020YFA0804003(to JW)the National Natural Science Foundation of China,Nos.31621004(to WL,BH)and 31970821(to YW)+1 种基金CAS Project for Young Scientists in Basic Research,No.YSBR-041(to YW)Joint Funds of the National Natural Science Foundation of China,No.U21A20396(to BH)。
文摘Numerous studies have shown that cell replacement therapy can replenish lost cells and rebuild neural circuitry in animal models of Parkinson’s disease.Transplantation of midbrain dopaminergic progenitor cells is a promising treatment for Parkinson’s disease.However,transplanted cells can be injured by mechanical damage during handling and by changes in the transplantation niche.Here,we developed a one-step biomanufacturing platform that uses small-aperture gelatin microcarriers to produce beads carrying midbrain dopaminergic progenitor cells.These beads allow midbrain dopaminergic progenitor cell differentiation and cryopreservation without digestion,effectively maintaining axonal integrity in vitro.Importantly,midbrain dopaminergic progenitor cell bead grafts showed increased survival and only mild immunoreactivity in vivo compared with suspended midbrain dopaminergic progenitor cell grafts.Overall,our findings show that these midbrain dopaminergic progenitor cell beads enhance the effectiveness of neuronal cell transplantation.
基金supported in part by the National Key Research and Development Program of China under Grant2022YFB3604400in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS)+5 种基金in part by CAS-Croucher Funding Scheme under Grant CAS22801in part by National Natural Science Foundation of China under Grant 62334012,Grant 62074161,Grant 62004213,Grant U20A20208Grant 62304252in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018in part by the University of CASin part by IMECAS-HKUST-Joint Laboratory of Microelectronics。
文摘In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modulation effect of the 2-D electron gas(2DEG,the back gate)beneath the 2-D hole gas(2DHG)channel.SA-BGITs with a gate length of 1μm have achieved an impressive peak drain current(I_(D,MAX))of 9.9 m A/mm.The fabricated SA-BGITs also possess a threshold voltage of 0.15 V,an exceptionally minimal threshold hysteresis of 0.2 V,a high switching ratio of 10~7,and a reduced ON-resistance(RON)of 548Ω·mm.Additionally,the SA-BGITs exhibit a steep sub-threshold swing(SS)of 173 mV/dec,further highlighting their suitability for integration into Ga N logic circuits.
