Corrective Effect of the Angle of Incidence of the Magnetic Field Intensity on the Performance (Series and Shunt Resistances) of a Bifacial Silicon Solar Cell

This article presents a three-dimensional analysis of the impact of the angle of incidence of the magnetic field intensity on the electrical performance (series resistance, shunt resistance) of a bifacial polycrystalline silicon solar cell. The cell is illuminated simultaneously from both sides. The continuity equation for the excess minority carriers is solved at the emitter and at the depth of the base respectively. The analytical expressions for photocurrent density, photovoltage, series resistance and shunt resistance were deduced. Using these expressions, the values of the series and shunt resistances were extracted for different values of the angle of incidence of the magnetic field intensity. The study shows that as the angle of incidence increases, the slopes of the minority carrier density for the two modes of operation of the solar cell decrease. This is explained by a drop in the accumulation of carriers in the area close to the junction due to the fact that the Lorentz force is unable to drive the carriers towards the lateral surfaces due to the weak action of the magnetic field, which tends to cancel out as the incidence angle increases, and consequently a drop in the open circuit photovoltage. This, in turn, reduces the Lorentz force. These results predict that the p-n junction of the solar cell will not heat up. The study also showed a decrease in series resistance as the incidence angle of the magnetic field intensity increased from 0 rad to π/2 rad and an increase in shunt resistance as the incidence angle increased. His behaviour of the electrical parameters when the angle of incidence of the field from 0 rad to π/2 rad shows that the decreasing magnetic field vector tends to be collinear with the electron trajectory. This allows them to cross the junction and participate in the external current. The best orientation for the Lorentz force is zero, in which case the carriers can move easily towards the junction.

External Magnetic Field Effect on Bifacial Silicon Solar Cell’s Electrical Parameters

The aim of this work is to present a theoretical study of external magnetic field effect on a bifacial silicon solar cell’s electrical parameters (peak power, fill factor and load resistance) using the J-V and P-V characteristics. After the resolution of the magneto transport equation and continuity equation of excess minority carriers in the base of the bifacial silicon solar cell under multispectral illumination, the photo-current density and the photovoltage are determined and the J-V and P-V curves are plotted. Using simultaneously the J-V and P-V curves, we determine, according to magnetic field intensity, the peak photocurrent density, the peak photovoltage, the peak electric power, the fill factor and the load resistance at the peak power point. The numerical data show that the solar cell’s peak power decreases with magnetic field intensity while the fill factor and the load resistance increase.

Investigating the Impact of Base Heating and External Electric Field on PV Cell Performance under Intense Illumination

The characterization of the performances of a PV cell is linked to intrinsic factors of this cell. It is therefore important for us to identify the favorable or unfavorable conditions that affect the performance of PV cells. It is from this perspective that it seems judicious to us to study the simultaneous influence of the heating of the base and an external electric field on the performance of a PV cell under intense illumination of 50 suns. Two phenomena contribute to the heating of the base of a PV cell which is heating due to the transfer by conduction of solar radiation energy received by the surface of the PV cell and the heat generated inside the PV cell by various phenomena linked to the movement of photogenerated charged carriers. In this study, we take into account the heating linked to the movement of the charged carriers in the base. After a mathematical modeling of the PV cell considered, some hypotheses are formulated and the expressions of the electrical parameters are established as a function of the electric field and base temperature. Subsequently, we use numerical simulation to highlight the behavior of theses parameters as a function of temperature and of the intensity of the electric field. The results show that for any given temperature, the orientation of the electric field as considered in our work improves the performance of the PV cell while high temperatures degrade these performances. Furthermore, the analysis of the curves shows that the harmful effect of temperature on the performance of a PV cell is more accentuated at large values of electric field.

Temperature Effect on Light Concentration Silicon Solar Cell’s Operating Point and Conversion Efficiency

It is well known that temperature acts negatively on practically all the parameters of photovoltaic solar cells. Also, the solar cells which are subjected to particularly very high temperatures are the light concentration solar cells and are used in light concentration photovoltaic systems (CPV). In fact, the significant heating of these solar cells is due to the concentration of the solar flux which arrives on them. Light concentration solar cells appear as solar cells under strong influences of heating and temperature. It is therefore necessary to take into account temperature effect on light concentration solar cells performances in order to obtain realistic results. This one-dimensional study of a crystalline silicon solar cell under light concentration takes into account electrons concentration gradient electric field in the determination of the continuity equation of minority carriers in the base. To determine excess minority carrier’s density, the effects of temperature on the diffusion and mobility of electrons and holes, on the intrinsic concentration of electrons, on carrier’s generation rate as well as on width of band gap have also been taken into account. The results show that an increase of temperature improves diffusion parameters and leads to an increase of the short-circuit photocurrent density. However, an increase of temperature leads to a significant decrease in open-circuit photovoltage, maximum electric power and conversion efficiency. The results also show that the operating point and the maximum power point (MPP) moves to the open circuit when the cell temperature increases.

Analysis and Comparison of Doping Level Effects on a Crystalline Silicon PV Cell under Both Moderate Light Concentration and Normal Illumination Modes

The main purpose of this work is to study doping level effects on a silicon PV cell under both moderate light concentration and normal illumination. This study also aims to compare the doping level effects under the both illumination modes. The results show for both illumination modes that diffusion parameters decrease with increasing doping level. These results are in agreement with the studies of the current and the voltage which showed for the two illumination modes that doping level increase leads to a decrease in current density and an increase in voltage. It also emerges for the two illumination modes and for the doping range 1013 cm-3 - 1016 cm-3, a decrease of maximum power and conversion efficiency. The results also show that decrease of diffusion parameters is faster under moderate concentration in comparison with normal illumination. These results predict a greater variation rate of the current, the voltage, the maximum power and the conversion efficiency under moderate concentration compared to normal illumination. Contrary to diffusion parameters study, the results show higher variation rates of parameters under normal illumination. This is explained by the fact that under moderate concentration, carriers density is close to doping level: the cell is then in high injection condition. Consequently, under moderate concentration, carriers density is less sensitive to doping level variations. The study confirms that carriers density variation with the doping level is weak under the moderate concentration compared to normal illumination.

Diurnal Variability of the Radiative Impact of Atmospheric Aerosols in Ouagadougou, Burkina Faso: A Seasonal Approach

The objective of this work is to study the diurnal evolution of the radiative impact of atmospheric aerosols in an urban city located in the West African Sahel and the correlations with the main influencing factors of local climate dynamics. The simulation was performed using a treatment chain including the GAME code. In the methodology, the atmosphere is modeled by 33 plane parallel layers and the effects of absorption, multiple scattering by particles and gas are taken account. An hour-by-hour calculation of radiative forcing at the top of the atmosphere, in the atmospheric layer and at the earth’s surface was performed. The data used as input are the monthly averages of optical properties, radiosonde measurements, daily synoptic measurements and surface albedo. The results show a parabolic diurnal course of a negative radiative impact at the top of the atmosphere with an extremum at 12 o'clock. Maximum cooling is observed shortly after sunrise and shortly after sunset. The largest annual deviations are noted between the months of March and December with respective maximum cooling values of -34 W/m2 and -15.60 W/m2. On the earth’s surface, a cooling impact is observed with two diurnal peaks at sunrise and sunset, the greatest difference between the diurnal maximums is noted between March (-104.45 W/m2) and August (-54 W/m2). In the atmospheric layer, there is almost constant diurnal warming between 9 a.m. and 4 p.m. The maximum difference between the diurnal extremes is also noted between March (about 85 W/m2) and August (35 W/m2). Likewise, the study of the diurnal warming of the first atmospheric layer showed the extreme values in March (5.6°C) and August (2.4°C), these maximum values being always observed at around 12 o’clock. An analysis of similar works carried out in urban cities in various locations of the world has shown a relatively good accordance with the values obtained. This study highlights the radiative impact of Saharan desert dust, the effect of the local climate and the succession between dry season (November to May) and the rainy one (July to October), as well as the zenith solar angle and human activity.

Impact of the Thicknesses of the p and p+ Regions on the Electrical Parameters of a Bifacial PV Cell

The present paper is about a contribution to the bifacial PV cell performances improvement. The PV cell efficiency is weak compared to the strong energy demand. In this study, the base thickness impacts and the p+ zone size influence are evaluated on the rear face of the polycrystalline back surface field bifacial silicon PV cell. The photocurrent density and photovoltage behaviors versus thickness of these regions are studied. From a three-dimensional grain of the polycrystalline bifacial PV cell, the magneto-transport and continuity equations of excess minority carriers are solved to find the expression of the density of excess minority carriers and the related electrical parameters, such as the photocurrent density, the photovoltage and the electric power for simultaneous illumination on both sides. The photocurrent density, the photovoltage and electric power versus junction dynamic velocity decrease for different thicknesses of base and the p+ region increases for simultaneous illumination on both sides. It is found that the thickness of the p+ region at 0.1 μm and the base size at 100 μm allow reaching the best bifacial PV cell performances. Consequently, it is imperative to consider the reduction in the thickness of the bifacial PV cell for exhibition of better performance. This reduced the costs and increase production speed while increasing conversion efficiency.

Investigation of the Behavior of a Photovoltaic Cell under Concentration as a Function of the Temperature of the Base and a Variable External Magnetic Field in 3D Approximation

The photovoltaic (PV) cell performances are connected to the base photogenerated carriers charge. Some studies showed that the quantity of the photogenerated carriers charge increases with the increase of the solar illumination. This situation explains the choice of concentration PV cell (C = 50 suns) in this study. However, the strong photogeneration of the carriers charge causes a high heat production by thermalization, collision and carriers charge braking due to the electric field induced by concentration gradient. This heat brings the heating of the PV cell base. That imposes the taking into account of the temperature influence in the concentrator PV cell operation. Moreover, with the proliferation of the magnetic field sources in the life space, it is important to consider its effect on the PV cell performances. Thus, when magnetic field and base temperature increase simultaneously, we observe a deterioration of the photovoltage, the electric power, the space charge region capacity, the fill factor and the conversion efficiency. However the photocurrent increases when the base temperature increases and the magnetic field strength decreases. It appears an inversion phenomenon in the evolution of the electrical parameters as a function of magnetic field for the values of magnetic field B> 4×10-4 T.

Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits

In this paper, a theory on the determination of the diffusion coefficient of excess minority carriers in the base of a silicon solar cell is presented. The diffusion coefficient expression has been established and is related to both frequency modulation and applied magnetic field;the study is then carried out using the impedance spectroscopy method and Bode diagrams. From the diffusion coefficient, we deduced the diffusion length and the minority carriers’ mobility. Electric parameters were derived from the diffusion coefficient equivalent circuits.

Effect of Incidence Angle of Magnetic Field on the Performance of a Polycrystalline Silicon Solar Cell under Multispectral Illumination

The aim of this work is to investigate, with a three-dimensional steady-state approach, the effect of the incidence angle of a magnetic field on the performance of a polycrystalline silicon solar cell under multispectral illumination. The magneto-transport and continuity equations of excess minority carriers are solved to find the expression of the density of excess minority carriers and the related electrical parameters, such as the photocurrent density, the photovoltage and the electric power, of a grain of the polycrystalline silicon solar cell. The influence of the incidence angle of the magnetic field on the diffusion coefficient, the short-circuit photocurrent density, the open-circuit photovoltage and the electric power-photovoltage is studied. Then, the curves of the electric power-photovoltage is used to find the maximum electric power allowing to calculate, according to the incidence angle of the magnetic field, the fill factor and the conversion efficiency. The study has shown that the increase of the incidence angle of the magnetic field from 0 rad to π/2 rad, can reduce the degradation of the performance of solar cells.

Modelling Study of Magnetic Field Effect on the Performance of a Silicon Photovoltaic Module

Solar Photovoltaic is a very promising solution that can greatly contribute in solving the increasing global energy demand. In both rural and urban areas, photovoltaic modules are in some instances installed close to telecommunication antennas or voltage transformers which generate important magnetic fields in their vicinity. The question is whether or not these magnetic fields affect the performances of the photovoltaic installations. This article presents a modelling study of external magnetic field effect on the electrical parameters of a photovoltaic module. The photocurrent, the photovoltage, the electric power, the series and the shunt resistances of the photovoltaic module, made up of ideal cells, are deduced from those of a silicon solar cell. Then, the I-V and P-V curves are plotted and the theoretical values of the electrical parameters of the photovoltaic module are deduced. The series and shunt resistances of the photovoltaic module are calculated using well known equations and the previous electrical parameters. The results show the negative effect of magnetic field on the performance of a solar photovoltaic module.

3-D Modeling of Temperature Effect on a Polycrystalline Silicon Solar Cell under Intense Light Illumination

The efficiency of a silicon solar cell is directly linked to the quantity of carrier photogenerated in its base. It increases with the increase of the quantity of carrier in the base of the solar cell. The carrier density in the base of the solar cell increases with the increase of the flux of photons that crosses the solar cell. One of the methods used to increase the flux of photon on the illuminated side of the solar cell is the intensification of the illumination light. However, the intensification of the light come with the increase of the energy released by thermalization, the collision between carriers, their braking due to the carriers concentration gradient electric field which lead to increase the temperature in the base of the solar cell. This work presents a 3-D study, of the effect of the temperature on the electronic parameters of a polycrystalline silicon solar under intense light illumination. The electronic parameters on which we analyze the temperature effect are:?the mobility of solar cell carriers?(electrons and holes),?their diffusion coefficient, their diffusion length and their distribution in the bulk of the base. To study the effect of the temperature on electronic parameters, we take into account, the dependence of carriers (electrons and holes) mobility with the temperature (μn,(T)?μp(T)). Then, the resolution of the continuity equation,which is a function of the carriers gradient electric field and the carriers mobility,?leads to the expressions of?the diffusion coefficient, the diffusion length, and the density of carriers which are function of the temperature. Then, we studied the effects of the temperature on the diffusion parameters in order to explain their effect on the behavior the carriers distribution in intermediate, short circuit and open circuit operating modes at several positions in the base depth. It appears through this study that the diffusion coefficient and the diffusion length decrease with the increase of the temperature. We observe also that with the increase of the temperature, the density of carriers in the base of the solar cell in short circuit and open voltage operating modes increases. In intermediate operating mode, the density of carriers increases also with the temperature but it is function of the base depth.

A 3D Modelling of Solar Cell’s Electric Power under Real Operating Point

This work, based on the junction recombination velocity (Sfu) concept, is used to study the solar cell’s electric power at any real operating point. Using Sfu and the back side recombination velocity (Sbu) in a 3D modelling study, the continuity equation is resolved. We determined the photocurrent density, the photovoltage and the solar cell’s electric power which is a calibrated function of the junction recombination velocity (Sfu). Plots of solar cell’s electric power with the junction recombination velocity give the maximum solar cell’s electric power, Pm. Influence of various parameters such as grain size (g), grain boundaries recombination velocity (Sgb), wavelength (λ) and for different illumination modes on the solar cell’s electric power is studied.

Modelling Study of Magnetic Field’s Effects on Solar Cell’s Transient Decay

Experimental setup of transient decay which occurs between two steady state operating points is recalled. The continuity equation is resolved using both the junction dynamic velocity (Sf) and back side recombination velocity (Sb). The transient excess minority carriers density appears as the sum of infinite terms. Influence of magnetic field on the transient excess minority carriers density and transient photo voltage is studied and it is demonstrated that the use of this technique is valid only when the magnetic field is lower than 0.001 T.