Acupuncture for ischemic stroke:where are we now?

Acupuncture is an effective treatment for ischemic stroke(IS)and plays a key role in neurological rehabilitation after IS.Acupuncture can improve the clinical symptoms of various complications after IS,including motor dysfunction,swallowing disorders,speech disorders,cognitive impairment,depression,insomnia,and fatigue.However,the mechanisms underlying the effects of acupuncture in IS remain unclear.Available evidence suggests that acupuncture may exert neuroprotective effects through neuroplasticity(neurogenesis and synaptogenesis),angiogenesis,cell proliferation and apoptosis,and regulation of oxidative stress,inflammation,and immunity.Further studies should be conducted to improve the high-quality evidence-based system of acupuncture intervention for IS,by focusing on the clinical and basic research design,increasing the sample size,standardizing and quantifying the standards of acupuncture operations,using multidisciplinary techniques and methods to systematically explore the key targets of acupuncture intervention for IS,and reveal the efficacy and mechanism of acupuncture in the treatment of IS.

How to conduct an acupuncture dose–effect relationship study? A discussion based on study methodology

Acupuncture therapy is widely used in the clinic,and its therapeutic effects have been proven by numerous studies.The dose–effect relationship of acupuncture is a fundamental aspect of the acupuncture research system.Recent studies found that different acupuncture dosages altered study results directly,indicating the importance of screening the optimal stimulation dosage.However,the system for studying the acupuncture dose–effect relationship is still in its infancy,and the methodology of the system needs to be improved.This review aimed to define the factors impacting acupuncture“dosage”and“effect,”and to improve the methodological system for research on the dose–effect relationship of acupuncture.By summarizing the current findings of acupuncture dose–effect studies,we discussed the vital acupuncture parameters and methodological problems that influence the relationship between acupuncture dosage and its effects.These factors consist of specific influencing factors(acupoint selection,acupuncture manipulation parameters,de qi response)and nonspecific influencing factors(comparison selection,blinding procedure,patient expectancy).Our perspectives offer suggestions for the design of acupuncture dosage–effect trials.Further studies need to be conducted to establish the methodological system and provide systematic evidence of the acupuncture dose–effect relationship.

Investigation into epitaxial growth optimization of a novel AlGaN/GaN HEMT structure for application in UV photodetectors

In this work,a novel ultraviolet(UV)photodetector(PD)based on AlGaN/u-GaN/p-GaN/u-GaN heterojunction high electron mobility transistor(HEMT)has been developed.This HEMT epilayer is grown using the metal-organic chemical vapor deposition(MOCVD)technique,and the growth parameters,including the AlGaN growth temperature,preheating temperature of the p-GaN layer,and NH3/N2 flow rate,are optimized to improve the quality of the epilayer.The optimized epilayer exhibits a flat surface with a root mean square value of 0.146 nm and low dislocation density.The p-GaN thickness in epitaxial wafers has a significant influence on electrical and UV photoresponse.With a p-GaN of 1µm,the UV PD demonstrates a significant switching ratio and transconductance of 107 and 127.3 mS mm^(-1),respectively.Acting as a UV PD,it also exhibits a high light on/off ratio(I_(light)/I_(dark))of 6.35×10^(5),a high responsivity(R)of 48.11 A W^(-1),and a detectivity(D*)of 6.85×10^(12)Jones under 365-nm UV illumination with light power density of 86.972 mW cm^(-2).The high-performance HEMT and UV detectors,which incorporate p-GaN etchless technology,have been refined through advancements in epitaxial growth and structural design.These improvements solidify the groundwork for large-scale manufacturing of UV communication systems and laser diodes.

Self-assembly In2Se3/SnSe2 heterostructure array with suppressed dark current and enhanced photosensitivity for weak signal

Functional van der Waals(vdWs)heterostructures based on layered materials have shown tremendous potential in next-generation optoelectronic devices.To date,numerous vdWs heterostructures have been investigated based on stacking or epitaxial growth technology.However the complicated synthesis process greatly limits the large-scale integration of the heterostructure device array,which is essential for practical applications.Here,a planar photodetector array with an out-of-plane vertical In2Se3/SnSe2heterostructure as the photosensitive channel was self-assembled through a pulsed laser deposition(PLD)technique.The vertical built-in field was exploited to suppress the dark current and separate the photogenerated carriers.The realized devices possess an ultralow dark current of 6.3 p A,combined with a high detectivity of 8.8×1011Jones and a high signal-to-noise ratio(SNR)beyond 3×104.These performance metrics not only are one order of magnitude superior to pure In2Se3device,but also demonstrate the unique advantage of detecting weak signals.In addition,this heterostructure photodetector array can further be constructed on flexible polyimide(PI)substrate.These flexible devices also demonstrate effective light detection capability and the photoresponse remains unchanged even after 200 cycles of bending.These findings pave a way toward the development of next-generation large area and high integration optoelectronic technologies.

硫酸化焙烧-水浸处理废稀土荧光粉工艺

针对当前废稀土荧光粉综合回收利用率低、不当处理造成环境污染严重等问题,采用硫酸化焙烧-水浸法处理废稀土荧光粉,考察了焙烧温度对物料形态的影响及焙烧温度、浓硫酸添加量对稀土氧化物浸出效果的影响,并对该工艺进行了初步环保评估。结果表明,在焙烧温度300℃、时间120 min、浓硫酸与废粉质量比为1.85及浸出温度25℃、时间120 min、液固质量比2:1的条件下,4种稀土氧化物的回收率分别为Y2O3 98.82%, Eu2O3 97.39%, CeO2 96.58%和Tb4O7 98.77%。硫酸化焙烧可使稀土分解为可溶性的硫酸盐和磷酸盐,并保证渣为环保的低放渣。浓硫酸添加量对4种稀土氧化物浸出率影响较大,焙烧温度对CeO2和Tb4O7浸出效果影响显著,在浓硫酸与废粉质量比1.85、浸出温度25℃、时间均为120 min的条件下,CeO2和Tb4O7的浸出率分别由焙烧温度200℃时的40.18%和37.18%提高至300℃时的96.58%和98.77%。稀土荧光粉在300℃下焙烧不会产生SO2和SO3等有害气体,焙烧过程中放出的气体主要为水蒸气和挥发的硫酸,物料失重约为10%。该工艺避免了焙烧过程中产生大量含硫、含氟、强酸性废气及难溶解的焙烧废渣,同时减少了环境污染及部分稀土资源浪费,具有广阔的工业应用前景。