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Challenges in Processing Diamond Wire Cut and Black Silicon Wafers in Large-Scale Manufacturing of High Efficiency Solar Cells 被引量:2
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作者 Kishan Shetty Yudhbir Kaushal +2 位作者 nagesh chikkan D. S. Murthy Chandra Mauli Kumar 《Journal of Power and Energy Engineering》 2020年第2期65-77,共13页
Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut ... Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut wafers and the abundant presence of amorphous silicon content, which are introduced from wafer manufacturing industry during sawing of multi-crystalline wafers using ultra-thin diamond wires. The industry standard texturing process for multi-crystalline wafers cannot deliver a homogeneous etched silicon surface, thereby requiring an additive compound, which acts like a surfactant in the acidic etch bath to enhance the texturing quality on diamond wire cut wafers. Black silicon wafers on the other hand require completely a different process chemistry and are normally textured using a metal catalyst assisted etching technique or by plasma reactive ion etching technique. In this paper, various challenges associated with cell processing steps using diamond wire cut and black silicon wafers along with cell electrical results using each of these wafer types are discussed. 展开更多
关键词 DIAMOND WIRE CUT BLACK SILICON Slurry Wafers Amorphous SILICON Additives Etching and TEXTURIZATION
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