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Impact of metastatic lymph node ratio in node-positive colorectal cancer 被引量:7
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作者 Shingo Noura Masayuki Ohue +6 位作者 Shingo Kano Tatsushi Shingai Terumasa Yamada Isao Miyashiro Hiroaki Ohigashi Masahiko Yano osamu ishikawa 《World Journal of Gastrointestinal Surgery》 SCIE CAS 2010年第3期70-77,共8页
Colorectal cancer(CRC) is one of the most common malignant diseases in the world.Presently,the most widely used staging system for CRC is the tumor nodes metastasis classification system,which classifies patients into... Colorectal cancer(CRC) is one of the most common malignant diseases in the world.Presently,the most widely used staging system for CRC is the tumor nodes metastasis classification system,which classifies patients into prognostic groups according to the depth of the primary tumor,presence of regional lymph node(LN) metastases,and evidence of distant metastatic spread.The number of LNs with confirmed metastasis is related to the severity of the disease,but this number depends on the number of LNs retrieved,which varies depending on patient age,tumor grade,surgical extent,and tumor site.Numerous studies and a recent structured review have demonstrated associated improvements in the survival of CRC patients with increasing numbers of LNs retrieved for examination.Hence,the impact of lymph node ratio(LNR),defined as the number of metastatic LNs divided by the number of LNs retrieved,has been investigated in various malignancies,including CRC.In this editorial,we review the literature demonstrating the clinicopathological significance of LNR in CRC pati-ents.Some reports have indicated the advantage of considering the LNR compared to the number of LNs retrieved and/or LN status.When the LNR is taken into consideration for survival analysis,the number of LNs retrieved and/or the LN status is not always found to be a prognostic factor.The cut-off points for LNRs were proposed in numerous studies.However,optimal thresholds for LNRs have not yet received consensus.It is still unclear whether the LNR has more prognostic validity than N stage.For all these reasons,the potential advantages of LNRs in the staging system should be investigated in large prospective data sets. 展开更多
关键词 LYMPH NODE ratio LYMPH NODE COLORECTAL cancer PROGNOSTIC factor Tumor NODES metastasis stage
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Successful embolization assisted by covered stents for a pseudoaneurysm following pancreatic surgery 被引量:2
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作者 Koji Tanaka Hiroaki Ohigashi +5 位作者 Hidenori Takahashi Kunihito Gotoh Terumasa Yamada Isao Miyashiro Masahiko Yano osamu ishikawa 《World Journal of Gastrointestinal Surgery》 SCIE CAS 2010年第9期295-298,共4页
Delayed intra-abdominal hemorrhage after pancreatic surgery is a potentially lethal complication.Transarterial coil embolization and/or the placing of an endovascular stent are minimally invasive and effective procedu... Delayed intra-abdominal hemorrhage after pancreatic surgery is a potentially lethal complication.Transarterial coil embolization and/or the placing of an endovascular stent are minimally invasive and effective procedures.An artery that is extensively eroded and rendered friable due to operative skeletonization or postoperative inflammation sometimes contributes to delayed intra-abdominal hemorrhage or rebleeding after coil embolization.This report presents a case of successful management of postoperative hemorrhage in a-74-year-old Japanese male.He experienced bleeding from a pseudoaneurysm of the brittle hepatic artery following total pancreatectomy.Initially the pseudoaneurysm was successfully treated with covered coronary stent-grafts,but rebleeding occurred 1 mo later due to the brittleness of the artery.Rebleeding was definitively managed by the complete packing of the stent by coil embolization.He remains stable at 18 mo following the f inal embolization.A stent graft can be used for protecting a brittle artery to avoid injury by coil embolization. 展开更多
关键词 COVERED STENT HEMORRHAGE PANCREATIC surgery Hepatic artery PSEUDOANEURYSM
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Efficacy of subcutaneous penrose drains for surgical site infections in colorectal surgery 被引量:1
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作者 Shinya Imada Shingo Noura +7 位作者 Masayuki Ohue Tatsushi Shingai Toshinori Sueda Kentaro Kishi Terumasa Yamada Hiroaki Ohigashi Masahiko Yano osamu ishikawa 《World Journal of Gastrointestinal Surgery》 SCIE CAS 2013年第4期110-114,共5页
AIM: To investigate whether a subcutaneous penrose drain would decrease the superficial surgical site infection (s-SSI) rate in elective colorectal surgery. METHODS: This is a comparative study of the historical contr... AIM: To investigate whether a subcutaneous penrose drain would decrease the superficial surgical site infection (s-SSI) rate in elective colorectal surgery. METHODS: This is a comparative study of the historical control type. Intervention consisted of the use of penrose drain in elective open colorectal surgical wounds. The outcome was an incidence of s-SSI. The patients were risk stratified according to the depth of subcutaneous tissue.RESULTS: There were 131 patients (40 patients with high s-SSI risk) in the prior period (from July 2008 to June 2009, when no penrose drains were inserted) and 151 patients (75 patients with high s-SSI risk) in the latter period (from June 2010 to November 2011, when penrose drains were inserted). The overall s-SSI rate was 6.1% and 5.3% during the two periods (P = 0.770), and the s-SSI rate in the high s-SSI risk group was 15.0% and 8.0% (P = 0.242).CONCLUSION: Although penrose drain was not observed to significantly reduce s-SSI, there tended to be a reduced risk of s-SSI in the high s-SSI risk group. 展开更多
关键词 SURGICAL site INFECTIONS SUBCUTANEOUS penrose DRAINS COLORECTAL SURGERY Open SURGERY SUBCUTANEOUS tissue
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工作在900MHz下的大功率高增益VDMOSFET
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作者 osamu ishikawa 景惠群 《微电子学》 CAS 1988年第5期61-65,共5页
已经研制出一种新的垂直双扩散MOSFET(VD-MOSFET),能在900MHz下输出 100瓦功率。这种器件能提供 8分贝的增益与45%的漏极效率。双扩散自对准栅允许器件控制亚微米沟通的形成,而这对于高跨导,商增益,以及最小的栅-源电容(C_(gs))是必不... 已经研制出一种新的垂直双扩散MOSFET(VD-MOSFET),能在900MHz下输出 100瓦功率。这种器件能提供 8分贝的增益与45%的漏极效率。双扩散自对准栅允许器件控制亚微米沟通的形成,而这对于高跨导,商增益,以及最小的栅-源电容(C_(gs))是必不可少的。MoSi_2既用作栅电极,也作为埋在栅区内CVD氧化层下面的屏蔽板。低电阻率栅减小驱动栅的额外功耗,而屏蔽板则使栅漏电容(C_(gd))降低一半。用12个组合单元的姑VD-MOSFET实现了最大的输出功率。它们被安放在与内部输入匹配电路封装在一起的两块BeO片上。在推挽放大器中测量了功率。 展开更多
关键词 VDMOSFET 自对准 推挽放大器 平衡放大器 栅电极 栅漏电容 沟道长度 器件 沟道区 功率密度 场板 双扩散 MHz 高增益
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采用新的偏心凹槽栅工艺制作的低噪声InGaAs HEMT
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作者 osamu ishikawa 樊元东 《半导体情报》 1991年第2期37-40,共4页
采用新的偏心凹槽栅工艺制作的低噪声InGaAs HEMT(高电子迁移率晶体管),在12GHz下噪声系数可达到0.68dB。这种n-AlGaAs/InGaAs PHEMT结构是用分子束外延法在半绝缘的GaAs衬底上生长的。采用这种新的偏心凹槽栅工艺可以减小栅源电阻,栅... 采用新的偏心凹槽栅工艺制作的低噪声InGaAs HEMT(高电子迁移率晶体管),在12GHz下噪声系数可达到0.68dB。这种n-AlGaAs/InGaAs PHEMT结构是用分子束外延法在半绝缘的GaAs衬底上生长的。采用这种新的偏心凹槽栅工艺可以减小栅源电阻,栅漏击穿电压可达6V以上。栅长为0.2μm的InGaAs HEMT在最低噪声偏置点的跨导为510mS/mm。在12GHz下,当V_(ds)=2V,I_(ds)=16mA时,最小噪声系数和相关增益分别为0.68dB和10.4dB。采用这种新的HEMT作为第一级的三级放大器,其最小噪声系数为1.2dB,最大增益为31dB。 展开更多
关键词 INGAAS HEMT 凹槽栅工艺 工艺
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