Bose–Einstein distribution temperature features of quasiparticles around magnetopolaron in Gaussian quantum wells of alkali halogen ions

We have applied strong coupling unitary transformation method combined with Bose–Einstein statistical law to investigate magnetopolaron energy level temperature effects in halogen ion crystal quantum wells.The obtained results showed that under magnetic field effect,magnetopolaron quasiparticle was formed through the interaction of electrons and surrounding phonons.At the same time,magnetopolaron was influenced by phonon temperature statistical law and important energy level shifts down and binding energy increases.This revealed that lattice temperature and magnetic field could easily affect magnetopolaron and the above results could play key roles in exploring thermoelectric conversion and conductivity of crystal materials.

Behavior of exciton in direct−indirect band gap Al_(x)Ga_(1−x)As crystal lattice quantum wells

Excitons have significant impacts on the properties of semiconductors.They exhibit significantly different properties when a direct semiconductor turns in to an indirect one by doping.Huybrecht variational method is also found to influence the study of exciton ground state energy and ground state binding energy in Al_(x)Ga_(1−x)As semiconductor spherical quantum dots.The Al_(x)Ga_(1−x)As is considered to be a direct semiconductor at AI concentration below 0.45,and an indirect one at the concentration above 0.45.With regards to the former,the ground state binding energy increases and decreases with AI concentration and eigenfrequency,respectively;however,while the ground state energy increases with AI concentration,it is marginally influenced by eigenfrequency.On the other hand,considering the latter,while the ground state binding energy increases with AI concentration,it decreases with eigenfrequency;nevertheless,the ground state energy increases both with AI concentration and eigenfrequency.Hence,for the better practical performance of the semiconductors,the properties of the excitons are suggested to vary by adjusting AI concentration and eigenfrequency.

The optical phonon drag effect on strong-coupling decay magnetopolaron in Gaussian alkali halogen ionic quantum wells

The polaron phenomenon is commonly observed in low-dimensional semiconductor materials and is known to have unique effects on conductive material properties.Furthermore,the phonon dragging effect,which leads to the polaron energy level,is less than the electron energy level.A decay magnetic field also affects the polaron effect,which causes polaron energy level changes.We demonstrate the unique electron-phonon coupling properties of this polaron using numerical calculations.Our findings have strong implications for theories of polaron properties and provide compelling evidence for a semiconductor device that industrial manufacturers use for new lowdimensional materials.