The effect of prior-heat treatments at 500℃, 600℃ and 700℃ on the creep behavior of an industrial drawn copper has been studied under constant stresses (98, 108 and 118 MPa) and temperatures (290℃ and 340℃). The ...The effect of prior-heat treatments at 500℃, 600℃ and 700℃ on the creep behavior of an industrial drawn copper has been studied under constant stresses (98, 108 and 118 MPa) and temperatures (290℃ and 340℃). The results revealed that the creep behavior and the creep life of the material depend strongly on these prior-heat treatments. The apparent activation energy Qc for different creep tests of a drawn copper wire was calculated. The fracture mechanism of the material is characterized using optical microscopy.展开更多
We investigated the optical properties of undoped zinc oxide thin films as the n-type semiconductor;the thin films were deposited at different precursor molarities by ultrasonic spray and spray pyrolysis techniques.Th...We investigated the optical properties of undoped zinc oxide thin films as the n-type semiconductor;the thin films were deposited at different precursor molarities by ultrasonic spray and spray pyrolysis techniques.The thin films were deposited at different substrate temperatures ranging between 200 and 500℃. In this paper, we present a new approach to control the optical gap energy of ZnO thin films by concentration of the ZnO solution and substrate temperatures from experimental data, which were published in international journals. The model proposed to calculate the band gap energy with the Urbach energy was investigated. The relation between the experimental data and theoretical calculation suggests that the band gap energies are predominantly estimated by the Urbach energies, film transparency, and concentration of the ZnO solution and substrate temperatures. The measurements by these proposal models are in qualitative agreements with the experimental data; the correlation coefficient values were varied in the range 0.96–0.99999, indicating high quality representation of data based on Equation（2）, so that the relative errors of all calculation are smaller than 4%. Thus, one can suppose that the undoped ZnO thin films are chemically purer and have many fewer defects and less disorder owing to an almost complete chemical decomposition and contained higher optical band gap energy.展开更多
文摘The effect of prior-heat treatments at 500℃, 600℃ and 700℃ on the creep behavior of an industrial drawn copper has been studied under constant stresses (98, 108 and 118 MPa) and temperatures (290℃ and 340℃). The results revealed that the creep behavior and the creep life of the material depend strongly on these prior-heat treatments. The apparent activation energy Qc for different creep tests of a drawn copper wire was calculated. The fracture mechanism of the material is characterized using optical microscopy.
文摘We investigated the optical properties of undoped zinc oxide thin films as the n-type semiconductor;the thin films were deposited at different precursor molarities by ultrasonic spray and spray pyrolysis techniques.The thin films were deposited at different substrate temperatures ranging between 200 and 500℃. In this paper, we present a new approach to control the optical gap energy of ZnO thin films by concentration of the ZnO solution and substrate temperatures from experimental data, which were published in international journals. The model proposed to calculate the band gap energy with the Urbach energy was investigated. The relation between the experimental data and theoretical calculation suggests that the band gap energies are predominantly estimated by the Urbach energies, film transparency, and concentration of the ZnO solution and substrate temperatures. The measurements by these proposal models are in qualitative agreements with the experimental data; the correlation coefficient values were varied in the range 0.96–0.99999, indicating high quality representation of data based on Equation（2）, so that the relative errors of all calculation are smaller than 4%. Thus, one can suppose that the undoped ZnO thin films are chemically purer and have many fewer defects and less disorder owing to an almost complete chemical decomposition and contained higher optical band gap energy.
