Clinical antiangiogenic effect of recombinant adenovirus-p53 combined with hyperthermia for advanced cancer

Objective： To assess the safety and clinical antiangiogenic effect of recombinant adenovirus-p53 （rAd-p53） combined with hyperthermia plus or not plus radiotherapy in advanced cancer. Methods： Expression of Vascular epithelial growth factor （VEGF） after intratumoral injection of rAd-p53 was assayed by immunohistochemistry （IHC） imaging. Forty-four patients with advanced cancer were enrolled into this clinical study. The patients were intratumorally injected with rAd-p53 （Gendicine） at a dose of 1×1012 vp once a week, with a total of 4-54 （mean 7.7） times. Total of 4-29 （mean 8.5） times of hyperthermia was given to the patients. Among the 44 patients, 30 patients were concurrently added with radiotherapy of a total dose 30-76 Gy/15-38 f/3-8 w （mean 58 Gy）. Results： Before and after intratumoral injection of rAd-p53, the VEGF IHC positive cell scores were 2.80 and 1.50, respectively （P=0.031）. The treatment of rAd-p53 combined with hyperthermia plus or not plus radiotherapy in advanced cancer achieved CR rate of 13.60% （6/44）, and PR rate of 29.6% （13/44）, and thus the effective rate was 43.2%. In addition to 6 patients with CR, 19 patients （19/38, 50.0%） had low density area （LDA） of more than 50% area on CT image within tumor indicating tumor tissue necrosis. Conclusions： Our data indicate that rAd-p53 inhibits VEGF expression and angiogenesis, and promotes tumor necrosis and shrinkage induced by hyperthermia plus or not plus radiotherapy in advanced cancer.

Present Situation of the Anti-Fatigue Processing of High-Strength Steel Internal Thread Based on Cold Extrusion Technology:A Review

The adoption of cold-extrusion forming for internal thread net forming becomes an important component of anti-fatigue processing with the development of internal thread processing towards high performance, low cost and low energy consumption. It has vast application foreground in the field of aviation, spaceflight, high speed train and etc. The internal thread processing and anti-fatigue manufacture technology are summarized. In terms of the perspective of processing quality and fatigue serving life, the advantages and disadvantages of the processing methods from are compared. The internal thread cold-extrusion processing technology is investigated for the purpose of improving the anti-fatigue serving life of internal thread. The superiorities of the plastic deformation law and surface integrity of the metal layer in the course of cold extrusion for improving its stability and economy are summed up. The proposed research forecasts the develop- ment tendency of the internal thread anti-fatigue manufacturing technology.

Effects of interlayer coupling on the excitons and electronic structures of WS_(2)/hBN/MoS_(2) van der Waals heterostructures

Inserting hexagonal boron nitride(hBN)as barrier layers into bilayer transition metal dichalcogenides heterointerface has been proved an efficient method to improve two dimensional tunneling optoelectronic device performance.Nevertheless,the physical picture of interlayer coupling effect during incorporation of monolayer(1L-)hBN is not explicit yet.In this article,spectroscopic ellipsometry was used to experimentally obtain the broadband excitonic and critical point properties of WS_(2)/MoS_(2)and WS_(2)/hBN/MoS_(2)van der Waals heterostructures.We find that 1L-hBN can only slightly block the interlayer electron transfer from WS_(2)layer to MoS_(2)layer.Moreover,insertion of 1L-hBN weakens the interlayer coupling effect by releasing quantum confinement and reducing efficient dielectric screening.Consequently,the exciton binding energies in WS_(2)/hBN/MoS_(2)heterostructures blueshift comparing to those in WS_(2)/MoS_(2)heterostructures.In this exciton binding energies tuning process,the reducing dielectric screening effect plays a leading role.In the meantime,the quasi-particle(QP)bandgap remains unchanged before and after 1L-hBN insertion,which is attributed to released quantum confinement and decreased dielectric screening effects canceling each other.Unchanged QP bandgap as along with blueshift exciton binding energies lead to the redshift exciton transition energies in WS_(2)/hBN/MoS_(2)heterostructures.