Single-event-effect propagation investigation on nanoscale system on chip by applying heavy-ion microbeam and event tree analysis

The propagation of single-event effects(SEEs)on a Xilinx Zynq-7000 system on chip(SoC)was inves-tigated using heavy-ion microbeam radiation.The irradia-tion results reveal several functional blocks’sensitivity locations and cross sections,for instance,the arithmetic logic unit,register,D-cache,and peripheral,while irradi-ating the on-chip memory(OCM)region.Moreover,event tree analysis was executed based on the obtained microbeam irradiation results.This study quantitatively assesses the probabilities of SEE propagation from the OCM to other blocks in the SoC.

Experimental study of temperature dependence of single-event upset in SRAMs

We report on the temperature dependence of single-event upsets in the 215–353 K range in a 4M commercial SRAM manufactured in a 0.15-lm CMOS process,utilizing thin film transistors. The experimental results show that temperature influences the SEU cross section on the rising portion of the cross-sectional curve(such as the chlorine ion incident). SEU cross section increases 257 %when the temperature increases from 215 to 353 K. One of the possible reasons for this is that it is due to the variation in upset voltage induced by changing temperature.

Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor

Silicon-germanium （SiGe） hereto-junction bipolar transistor current transients induced by pulse laser and heavy iron are measured using a real-time digital oscilloscope. These transients induced by pulse laser and heavy iron exhibit the same waveform and charge collection time except for the amplitude of peak current. Different laser energies and voltage biases under heavy ion irradiation also have impact on current transient, whereas the waveform remains unchanged. The position-correlated current transients suggest that the nature of the current transient is controlled by the behavior of the C/S junction.

Processes and causes of Phanerozoic tectonic evolution of the western Tarim Basin,northwest China

This paper addresses the Phanerozoic tectonic evolution of the western Tarim Basin based on an integrated stratigraphic,structural and tectonic analysis.P-wave velocity data show that the basin has a stable and rigid basement.The western Tarim Basin experienced a complex tectonic evolutionary history,and this evolution can be divided into six stages:Neoproterozoic to Early Ordovician,Middle Ordovician to Middle Devonian,Late Devonian to Permian,Triassic,Jurassic to Cretaceous and Paleogene to Quaternary.The western Tarim Basin was a rift basin in the Neoproterozoic to Early Ordovician.From the Middle Ordovician to Middle Devonian,the basin consisted of a flexural depression in the south and a depression that changed from a rift depression to a flexural depression in the north during each period,i.e.,the Middle-Late Ordovician and the Silurian to Middle Devonian.During the Late Devonian to Permian,the basin was a depression basin early and then changed into a flexural basin late in each period,i.e.,the Late Devonian to Carboniferous and the Permian.In the Triassic,the basin was a foreland basin,and from the Jurassic to Cretaceous,it was a downwarped basin.After the Paleogene,the basin became a rejuvenated foreland basin.Based on two cross sections,we conclude that the extension and shortening in the profile reflect the tectonic evolution of the Tarim Basin.The Tarim Basin has become a composite and superimposed sedimentary basin because of its long-term and complicated tectonic evolutionary history,highly rigid and stable basement and large size.