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Negative Magnetoresistance in Antiferromagnetic Topological Insulator EuSn2As2
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作者 Huan-Cheng ChenZhe-Fcng Lou Yu-Xing Zhou +6 位作者 Qin Chen Bin-lie Xu shui-jin chei Jian-Hua Du Jin-Hu Yang Hang-Dong Wang Ming-Hu Fang 《Chinese Physics Letters》 SCIE CAS CSCD 2020年第4期121-124,共4页
The measurements of magnetization,longitudinal and Hall resistivities are carried out on the intrinsic antiferromagnetic(AFM) topological insulator ElSn2 As2.It is confirmed that our ElSn2 As2 crystal is a heavily hol... The measurements of magnetization,longitudinal and Hall resistivities are carried out on the intrinsic antiferromagnetic(AFM) topological insulator ElSn2 As2.It is confirmed that our ElSn2 As2 crystal is a heavily hole doping A-type AFM metal with the Neel temperature TN=24 K,with a metamagnetic transition from an AFM to a ferromagnetic(FIM) phase occurring at a certain critical magnetic Held for the different Held orientations.Meanwhile,we also find that the carrier concentration does not change with the evolution of magnetic order,indicating that the weak interaction between the localized magnetic moments from Eu2+4f7 orbits and the electronic states near the Fermi level.Although the quantum anomalous Hall effect(AHE) is not observed in our crystals,it is found that a relatively large negative magnetoresistance (-13%) emerges in the AFM phase,and exhibits an exponential dependence upon magnetic Held,whose microscopic origin is waiting to be clarified in future research. 展开更多
关键词 RESISTANCE FERROMAGNETIC MAGNETIC
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