Light-emitting devices based on atomically thin MoSe_(2)

Atomically thin MoSe_(2) layers,as a core member of the transition metal dichalcogenides(TMDs)family,benefit from their appealing properties,including tunable band gaps,high exciton binding energies,and giant oscillator strengths,thus pro-viding an intriguing platform for optoelectronic applications of light-emitting diodes(LEDs),field-effect transistors(FETs),sin-gle-photon emitters(SPEs),and coherent light sources(CLSs).Moreover,these MoSe_(2) layers can realize strong excitonic emis-sion in the near-infrared wavelengths,which can be combined with the silicon-based integration technologies and further encourage the development of the new generation technologies of on-chip optical interconnection,quantum computing,and quantum information processing.Herein,we overview the state-of-the-art applications of light-emitting devices based on two-dimensional MoSe_(2) layers.Firstly,we introduce recent developments in excitonic emission features from atomically thin MoSe_(2) and their dependences on typical physical fields.Next,we focus on the exciton-polaritons and plasmon-exciton polaritons in MoSe_(2) coupled to the diverse forms of optical microcavities.Then,we highlight the promising applications of LEDs,SPEs,and CLSs based on MoSe_(2) and their heterostructures.Finally,we summarize the challenges and opportunities for high-quality emis-sion of MoSe_(2) and high-performance light-emitting devices.

Probing angle-resolved reflection signatures of intralayer and interlayer excitons in monolayer and bilayer MoS_(2)

Strongly bound excitons in atomically thin transition metal dichalcogenides offer many opportunities to reveal the underlying physics of basic quasiparticles and many-body effects in the two-dimensional(2D)limit.Comprehensive reflection investigation on band-edge exciton transitions is essential to exploring wealthy light–matter interactions in the emerging 2D semiconductors,whereas angle-resolved reflection(ARR)characteristics of intralayer and interlayer excitons in 2D MoS_(2)layers remain unclear.Herein,we report ARR spectroscopic features of A,B,interlayer excitons in monolayer(ML)and bilayer(BL)MoS_(2)on three kinds of photonic substrates,involving distinct exciton–photon interactions.In a BL MoS_(2)on a protected silver mirror,the interlayer exciton with one-third amplitude of A exciton appears at 0.05 eV above the A exciton energy,exhibiting an angleinsensitive energy dispersion.When ML and BL MoS_(2)lie on a SiO_(2)-covered silicon,the broad trapped-photon mode weakly couples with the reflection bands of A and B excitons by the Fano resonance effect,causing the asymmetric lineshapes and the redshifted energies.After transferring MoS_(2)layers onto a one-dimensional photonic crystal,two high-lying branches of B-exciton polaritons are formed by the interactions between B excitons and Bragg photons,beyond the weak-coupling regime.This work provides ARR spectral benchmarks of A,B,interlayer excitons in ML and BL MoS_(2),gaining insights into the interpretation of light–matter interactions in 2D semiconductors and the design of their devices for practical photonic applications.

Observation of room‐temperature out‐of‐plane switchable electric polarization in supported 3R‐MoS_(2) monolayers

Two‐dimensional(2D)ferroelectrics have attracted considerable attention due to their potential in the development of devices of miniaturization and multifunction.Although several van der Waals(vdW)‐layered materials show ferroelectricity,the experimental demonstrations of ferroelectric behavior in monolayers are very limited.Here we report the observation of room‐temperature out‐of‐plane switchable electric polarization in supported MoS_(2) monolayers exfoliated from 3R‐stacked bulk crystals under ambient conditions.Using in situ piezoelectric force microscopy and Kelvin probe force microscopy in a glovebox,we reveal that trapped water/ice molecules are responsible for this switchable electric polarization and this conclusion is strongly supported by theoretical simulations.It is worth noting that the water/ice trapping in the monolayers exfoliated from 2H‐stacked MoS_(2) crystals is not as much as that in 3R monolayers and,consequently,the out‐of‐plane electric polarization is missing there.Our findings indicate that monolayers with a trapped single layer of polar molecules might be emerging alternatives to 2D ferroelectrics.Furthermore,the stacking sequences may bring new properties and applications to 2D vdW materials not only when we stack them up but also when we thin them down.