Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface e...Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface energy and even leading to structure failure. This work presents a methodological study on the measurement of residual stress in a multi-layer semiconductor heterostructure. Scanning electron microscopy（SEM）, micro-Raman spectroscopy（MRS）, and transmission electron microscopy（TEM） were applied to measure the geometric parameters of the multilayer structure. The relationship between the Raman spectrum and the stress/strain on the [100] and [110] crystal orientations was determined to enable surface and crosssection residual stress analyses, respectively. Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained.展开更多
文摘[目的]从线粒体损伤角度研究丹红注射对异丙肾上腺素(ISO)诱导的心肌细胞H9c2凋亡的影响。[方法]培养H9c2细胞,分为对照组、10μmol/L ISO模型组,10μmol/L ISO和20、200μL/L丹红注射液组。按相应给药时间后采用流式细胞术检测细胞凋亡,明确药物对细胞凋亡的作用。活细胞荧光成像仪检测细胞线粒体膜电位变化、激光共聚焦检测细胞内活性氧簇(ROS)的产生、Fluo-3 AM ester荧光染料染色检测细胞内钙离子浓度研究丹红注射液抗心肌细胞凋亡的相关作用机制。[结果]与对照组(1.33%±0.42%)相比,ISO显著上升细胞凋亡率(5.13%±0.15%)(P<0.01);与ISO组比较,20、200μL/L丹红注射液后,细胞凋亡率分别下降为(4.23%±0.15%)和(2.37%±0.38%)。与对照组相比,给予ISO后细胞内线粒体膜电位去极化程度显著增加,为对照的(151.76%±16.01%)(P<0.01),20、200μL/L丹红注射液显著抑制ISO诱导的细胞内线粒体膜去极化,分别为对照的(121.07%±11.53%)和(117.15%±12.91%)。此外,丹红注射液显著抑制ISO诱导的细胞内ROS浓度及钙离子浓度的升高,差异具有统计学意义。[结论]丹红注射液可通过抑制ISO引起的细胞内线粒体膜电位去极化、降低细胞内ROS和钙离子浓度而发挥其抗H9c2细胞凋亡作用。
基金the financial supports from the National Natural Science Foundation of China(Nos.52171099,52105140,51301025)the Natural Science Foundation of Hunan Province,China(No.2021JJ40583)+2 种基金the Natural Science Foundation of Changsha City,China(No.kq2014096)the Open Research Fund of Science and Technology Innovation Platform of Key Laboratory of Efficient&Clean Energy Utilization,Education Department of Hunan Province,China(No.2018NGQ004)the Innovation Program for Postgraduate of Changsha University of Science and Technology,China(No.SJCX202166)。
基金supported by the National Basic Research Program of China (Grant 2012CB937500)the National Natural Science Foundation of China (Grants 11422219, 11227202, 11372217, 11272232)+1 种基金the Program for New Century Excellent Talents in University (Grant NCET-13)China Scholarship Council (201308120092)
文摘Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface energy and even leading to structure failure. This work presents a methodological study on the measurement of residual stress in a multi-layer semiconductor heterostructure. Scanning electron microscopy（SEM）, micro-Raman spectroscopy（MRS）, and transmission electron microscopy（TEM） were applied to measure the geometric parameters of the multilayer structure. The relationship between the Raman spectrum and the stress/strain on the [100] and [110] crystal orientations was determined to enable surface and crosssection residual stress analyses, respectively. Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained.
