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Piezotronic neuromorphic devices:principle,manufacture,and applications
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作者 xiangde lin Zhenyu Feng +5 位作者 Yao Xiong Wenwen Sun Wanchen Yao Yichen Wei Zhong lin Wang Qijun Sun 《International Journal of Extreme Manufacturing》 SCIE EI CAS CSCD 2024年第3期363-385,共23页
With the arrival of the era of artificial intelligence(AI)and big data,the explosive growth of data has raised higher demands on computer hardware and systems.Neuromorphic techniques inspired by biological nervous sys... With the arrival of the era of artificial intelligence(AI)and big data,the explosive growth of data has raised higher demands on computer hardware and systems.Neuromorphic techniques inspired by biological nervous systems are expected to be one of the approaches to breaking the von Neumann bottleneck.Piezotronic neuromorphic devices modulate electrical transport characteristics by piezopotential and directly associate external mechanical motion with electrical output signals in an active manner,with the capability to sense/store/process information of external stimuli.In this review,we have presented the piezotronic neuromorphic devices(which are classified into strain-gated piezotronic transistors and piezoelectric nanogenerator-gated field effect transistors based on device structure)and discussed their operating mechanisms and related manufacture techniques.Secondly,we summarized the research progress of piezotronic neuromorphic devices in recent years and provided a detailed discussion on multifunctional applications,including bionic sensing,information storage,logic computing,and electrical/optical artificial synapses.Finally,in the context of future development,challenges,and perspectives,we have discussed how to modulate novel neuromorphic devices with piezotronic effects more effectively.It is believed that the piezotronic neuromorphic devices have great potential for the next generation of interactive sensation/memory/computation to facilitate the development of the Internet of Things,AI,biomedical engineering,etc. 展开更多
关键词 piezotronics neuromorphic devices strain-gated transistors piezoelectric nanogenerators synaptic transistors
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Electric-double-layer-gated 2D transistors for bioinspired sensors and neuromorphic devices
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作者 xiangde lin Yonghai Li +1 位作者 Yanqiang Lei Qijun Sun 《International Journal of Smart and Nano Materials》 SCIE EI 2024年第1期238-259,共22页
Electric double layer(EDL)gating is a technique in which ions in an electrolyte modulate the charge transport in an electronic material through electrical field effects.A sub-nanogap capacitor is induced at the interf... Electric double layer(EDL)gating is a technique in which ions in an electrolyte modulate the charge transport in an electronic material through electrical field effects.A sub-nanogap capacitor is induced at the interface of electrolyte/semiconductor under the external electrical field and the capacitor has an ultrahigh capacitance density(~μF cm-2).Recently,EDL gating technique,as an interfacial gating,is widely used in two-dimensional(2D)crystals for various sophisti-cated materials characterization and device applications.This review introduces the EDL-gated transistors based on 2D materials and their applications in the field of bioinspired optoelectronic detection,sen-sing,logic circuits,and neuromorphic computation. 展开更多
关键词 Electrical double layer transistors 2D materials sensors applications
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