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Behavior of exciton in direct−indirect band gap Al_(x)Ga_(1−x)As crystal lattice quantum wells
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作者 Yong Sun Wei Zhang +10 位作者 Shuang Han Ran An Xin-Sheng Tang Xin-Lei Yu xiu-juan miao Xin-Jun Ma Xianglian Pei-Fang Li Cui-Lan Zhao Zhao-Hua Ding Jing-Lin Xiao 《Journal of Semiconductors》 EI CAS CSCD 2024年第3期64-70,共7页
Excitons have significant impacts on the properties of semiconductors.They exhibit significantly different properties when a direct semiconductor turns in to an indirect one by doping.Huybrecht variational method is a... Excitons have significant impacts on the properties of semiconductors.They exhibit significantly different properties when a direct semiconductor turns in to an indirect one by doping.Huybrecht variational method is also found to influence the study of exciton ground state energy and ground state binding energy in Al_(x)Ga_(1−x)As semiconductor spherical quantum dots.The Al_(x)Ga_(1−x)As is considered to be a direct semiconductor at AI concentration below 0.45,and an indirect one at the concentration above 0.45.With regards to the former,the ground state binding energy increases and decreases with AI concentration and eigenfrequency,respectively;however,while the ground state energy increases with AI concentration,it is marginally influenced by eigenfrequency.On the other hand,considering the latter,while the ground state binding energy increases with AI concentration,it decreases with eigenfrequency;nevertheless,the ground state energy increases both with AI concentration and eigenfrequency.Hence,for the better practical performance of the semiconductors,the properties of the excitons are suggested to vary by adjusting AI concentration and eigenfrequency. 展开更多
关键词 exciton effects aluminum gallium arsenide crystal direct band gap semiconductor indirect band gap semiconductor
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