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11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate 被引量:1
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作者 Yansheng Hu Yuangang Wang +11 位作者 Wei Wang Yuanjie Lv Hongyu Guo Zhirong Zhang Hao Yu xubo song Xingye zhou Tingting Han Shaobo Dun Hongyu Liu Aimin Bu Zhihong Feng 《Journal of Semiconductors》 EI CAS CSCD 2024年第1期38-41,共4页
In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improv... In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance.The breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V.The maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the AlGaN/GaN HEMTs exceed 30 and 20 GHz,respectively.The results demonstrate the potential of AlGaN/GaN HEMTs on freestanding GaN substrates for microwave power applications. 展开更多
关键词 freestanding GaN substrates AlGaN/GaN HEMTs continuous-wave power density breakdown voltage Γ-shaped gate
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Source-field-plated Ga_2O_3 MOSFET with a breakdown voltage of 550 V 被引量:1
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作者 Yuanjie Lü xubo song +6 位作者 Zezhao He Yuangang Wang Xin Tan Shixiong Liang Cui Wei Xingye Zhou Zhihong Feng 《Journal of Semiconductors》 EI CAS CSCD 2019年第1期77-79,共3页
Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor dep... Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor deposition(MOCVD) on an Fedoped semi-insulating(010) Ga_2O_3 substrate. The structure consisted of a 400 nm unintentionally doped(UID) Ga_2O_3 buffer layer and an 80 nm Si-doped channel layer. A high k HfO_2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at V_(gs) of 3 V. The off-state current was as low as 7.1 ×10^(-11) A/mm, and the drain current I_(ON)/I_(OFF) ratio reached 10~9. The transistors exhibited three-terminal off-state breakdown voltages of 450 and 550 V, corresponding to gate-to-drain spacing of 4 and 8 μm, respectively. 展开更多
关键词 Ga_2O_3 MOSFET breakdown voltage filed plate
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Coeffect of trapping behaviors on the performance of GaN-based devices 被引量:2
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作者 Xingye Zhou Xin Tan +5 位作者 Yuangang Wang xubo song Peng Xu Guodong Gu Yuanjie Lü Zhihong Feng 《Journal of Semiconductors》 EI CAS CSCD 2018年第9期50-54,共5页
Trap-induced current collapse has become one of the critical issues hindering the improvement of Ga Nbased microwave power devices. It is difficult to study the behavior of each trapping effect separately with the exp... Trap-induced current collapse has become one of the critical issues hindering the improvement of Ga Nbased microwave power devices. It is difficult to study the behavior of each trapping effect separately with the experimental measurement. Transient simulation is a useful technique for analyzing the mechanism of current collapse. In this paper, the coeffect of surface-and bulk-trapping behaviors on the performance of Al Ga N/Ga N HEMTs is investigated based on the two-dimensional(2 D) transient simulation. In addition, the mechanism of trapping effects is analyzed from the aspect of device physics. Two simulation models with different types of traps are used for comparison, and the simulated results reproduced the experimental measured data. It is found that the final steady-state current decreases when both the surface and bulk traps are taken into account in the model.However, contrary to the expectation, the total current collapse is dramatically reduced(e.g. from 18% to 4% for the 90 nm gate-length device). The results suggest that the surface-related current collapse of Ga N-based HEMTs may be mitigated in some degree due to the participation of bulk traps with short time constant. The work in this paper will be helpful for further optimization design of material and device structures. 展开更多
关键词 GaN-based HEMT device physics trapping effect transient simulation
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Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection 被引量:4
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作者 Xingye Zhou Jia Li +8 位作者 Weili Lu Yuangang Wang xubo song Shunzheng Yin Xin Tan Yuanjie Lu Hongyu Guo Guodong Gu Zhihong Feng 《Chinese Optics Letters》 SCIE EI CAS CSCD 2018年第6期15-18,共4页
In this Letter, we report large-area(600 μm diameter) 4H-SiC avalanche photodiodes(APDs) with high gain and low dark current for visible-blind ultraviolet detection. Based on the separate absorption and multiplic... In this Letter, we report large-area(600 μm diameter) 4H-SiC avalanche photodiodes(APDs) with high gain and low dark current for visible-blind ultraviolet detection. Based on the separate absorption and multiplication structure, 4H-SiC APDs passivated with SiNxinstead of SiO2 are demonstrated for the first time, to the best of our knowledge. Benefitting from the SiNx passivation, the surface leakage current is effectively suppressed. At room temperature, high multiplication gain of 6.5 × 10^5 and low dark current density of 0.88 μA∕cm^2 at the gain of 1000 are achieved for our devices, which are comparable to the previously reported small-area Si C APDs. 展开更多
关键词 SiC APD
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High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area 被引量:1
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作者 Xingye Zhou Xin Tan +8 位作者 Yuangang Wang xubo song Tingting Han Jia Li Weili Lu Guodong Gu Shixiong Liang Yuanjie Lii Zhihong Feng 《Chinese Optics Letters》 SCIE EI CAS CSCD 2019年第9期1-4,共4页
Ultraviolet(UV) detectors with large photosensitive areas are more advantageous in low-level UV detection applications. In this Letter, high-performance 4 H-SiC p-i-n avalanche photodiodes(APDs) with large active area... Ultraviolet(UV) detectors with large photosensitive areas are more advantageous in low-level UV detection applications. In this Letter, high-performance 4 H-SiC p-i-n avalanche photodiodes(APDs) with large active area(800 μm diameter) are reported. With the optimized epitaxial structure and device fabrication process,a high multiplication gain of 1.4 × 10^6 is obtained for the devices at room temperature, and the dark current is as low as ~10 p A at low reverse voltages. In addition, record external quantum efficiency of 85.5% at 274 nm is achieved, which is the highest value for the reported Si C APDs. Furthermore, the rejection ratio of UV to visible light reaches about 10^4. The excellent performance of our devices indicates a tremendous improvement for largearea SiC APD-based UV detectors. Finally, the UV imaging performance of our fabricated 4 H-SiC p-i-n APDs is also demonstrated for system-level applications. 展开更多
关键词 Ultraviolet(UV) 4H-SIC P-I-N photodiodes
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High-stability _(4)H-SiC avalanche photodiodes for UV detection at high temperatures 被引量:1
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作者 周幸叶 吕元杰 +5 位作者 郭红雨 宋旭波 王元刚 梁士雄 卜爱民 冯志红 《Chinese Optics Letters》 SCIE EI CAS CSCD 2023年第3期123-126,共4页
In this work,high-stability _[4]H-SiC avalanche photodiodes[APDs]for ultraviolet[UV]detection at high temperatures are fabricated and investigated.With the temperature increasing from room temperature to 150℃,a very ... In this work,high-stability _[4]H-SiC avalanche photodiodes[APDs]for ultraviolet[UV]detection at high temperatures are fabricated and investigated.With the temperature increasing from room temperature to 150℃,a very small temperature coefficient of 7.4 m V/℃is achieved for the avalanche breakdown voltage of devices.For the first time,the stability of 4H-SiC APDs is verified based on an accelerated aging test with harsh stress conditions.Three different stress conditions are selected with the temperatures and reverse currents of 175℃/100μA,200℃/100μA,and 200℃/500μA,respectively.The results show that our 4H-SiC APD exhibits robust high-temperature performance and can even endure more than120 hours at the harsh aging condition of 200℃/500μA,which indicates that 4H-SiC APDs are very stable and reliable for applications at high temperatures. 展开更多
关键词 silicon carbide photodiod
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