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Defects‑Rich Heterostructures Trigger Strong Polarization Coupling in Sulfides/Carbon Composites with Robust Electromagnetic Wave Absorption
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作者 Jiaolong Liu Siyu Zhang +14 位作者 Dan Qu xuejiao zhou Moxuan Yin Chenxuan Wang Xuelin Zhang Sichen Li Peijun Zhang Yuqi zhou Kai Tao Mengyang Li Bing Wei Hongjing Wu Mengyang Li Bing Wei Hongjing Wu 《Nano-Micro Letters》 SCIE EI CAS 2025年第1期528-547,共20页
Defects-rich heterointerfaces integrated with adjustable crystalline phases and atom vacancies,as well as veiled dielectric-responsive character,are instrumental in electromagnetic dissipation.Conventional methods,how... Defects-rich heterointerfaces integrated with adjustable crystalline phases and atom vacancies,as well as veiled dielectric-responsive character,are instrumental in electromagnetic dissipation.Conventional methods,however,constrain their delicate constructions.Herein,an innovative alternative is proposed:carrageenan-assistant cations-regulated(CACR)strategy,which induces a series of sulfides nanoparticles rooted in situ on the surface of carbon matrix.This unique configuration originates from strategic vacancy formation energy of sulfides and strong sulfides-carbon support interaction,benefiting the delicate construction of defects-rich heterostructures in M_(x)S_(y)/carbon composites(M-CAs).Impressively,these generated sulfur vacancies are firstly found to strengthen electron accumulation/consumption ability at heterointerfaces and,simultaneously,induct local asymmetry of electronic structure to evoke large dipole moment,ultimately leading to polarization coupling,i.e.,defect-type interfacial polarization.Such“Janus effect”(Janus effect means versatility,as in the Greek two-headed Janus)of interfacial sulfur vacancies is intuitively confirmed by both theoretical and experimental investigations for the first time.Consequently,the sulfur vacancies-rich heterostructured Co/Ni-CAs displays broad absorption bandwidth of 6.76 GHz at only 1.8 mm,compared to sulfur vacancies-free CAs without any dielectric response.Harnessing defects-rich heterostructures,this one-pot CACR strategy may steer the design and development of advanced nanomaterials,boosting functionality across diverse application domains beyond electromagnetic response. 展开更多
关键词 Defects-rich heterointerfaces Sulfides Polarization coupling Electromagnetic wave absorption
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Broadband high-performance microwave absorption of the single-layer Ti_(3)C_(2)T_(x)MXene 被引量:4
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作者 xuejiao zhou Junwu Wen +2 位作者 Zhenni Wang Xiaohua Ma Hongjing Wu 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2022年第20期148-155,共8页
MXenes,a family of two-dimensional(2D)materials,exhibit peculiar microwave-absorbing behaviors due to their unique chemical composition and structure.Although laminated Ti_(3)C_(2)T_(x) MXenes with a multilayer struct... MXenes,a family of two-dimensional(2D)materials,exhibit peculiar microwave-absorbing behaviors due to their unique chemical composition and structure.Although laminated Ti_(3)C_(2)T_(x) MXenes with a multilayer structure have been used for microwave absorption,real 2D MXenes with a single-layer structure have not yet been investigated.Here,the electromagnetic wave response behavior of single-layer Ti_(3)C_(2)T_(x) MXenes was explored in detail.The permittivity of Ti_(3)C_(2)T_(x) MXene rises dramatically with an increase in filler loading,and Ti_(3)C_(2)T_(x) MXene features a distinct dielectric response wherein dipolar polarization and interfacial polarization makes a greater contribution at low filler loading;conductive loss becomes more prominent at high filler loading.Versus laminated Ti_(3)C_(2)T_(x) MXene,single-layer Ti_(3)C_(2)T_(x) MXene delivers superior absorbing capability:The RLminvalue of SL-Ti_(3)C_(2)T_(x)-22%reaches-43.5 d B at 6.5 GHz,and a broad EAB of 6.88 GHz can be attained at a thickness of 1.8 mm due to enhanced dipolar polarization,interfacial polarization,and conductive loss.This work is of great significance in guiding the future development of MXene-based absorbers. 展开更多
关键词 Microwave absorption Ti_(3)C_(2)T_(x)MXene SINGLE-LAYER Conductive loss
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