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STCF conceptual design report (Volume 1): Physics & detector 被引量:2
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作者 M.Achasov X.C.Ai +457 位作者 L.P.An R.Aliberti Q.An X.Z.Bai Y.Bai O.Bakina A.Barnyakov V.Blinov V.Bobrovnikov D.Bodrov A.Bogomyagkov A.Bondar I.Boyko Z.H.Bu F.M.Cai H.Cai J.J.Cao Q.H.Cao X.Cao Z.Cao Q.Chang K.T.Chao D.Y.Chen H.Chen H.X.Chen J.F.Chen K.Chen L.L.Chen P.Chen S.L.Chen S.M.Chen S.Chen S.P.Chen W.Chen X.Chen X.F.Chen X.R.Chen Y.Chen Y.Q.Chen H.Y.Cheng J.Cheng S.Cheng T.G.Cheng J.P.Dai L.Y.Dai X.C.Dai D.Dedovich A.Denig I.Denisenko J.M.Dias D.Z.Ding L.Y.Dong W.H.Dong V.Druzhinin D.S.Du Y.J.Du Z.G.Du L.M.Duan D.Epifanov Y.L.Fan S.S.Fang Z.J.Fang G.Fedotovich C.Q.Feng X.Feng Y.T.Feng J.L.Fu J.Gao Y.N.Gao P.S.Ge C.Q.Geng L.S.Geng A.Gilman L.Gong T.Gong B.Gou W.Gradl J.L.Gu A.Guevara L.C.Gui A.Q.Guo F.K.Guo J.C.Guo J.Guo Y.P.Guo Z.H.Guo A.Guskov K.L.Han L.Han M.Han X.Q.Hao J.B.He S.Q.He X.G.He Y.L.He Z.B.He Z.X.Heng B.L.Hou T.J.Hou Y.R.Hou C.Y.Hu H.M.Hu K.Hu R.J.Hu W.H.Hu X.H.Hu Y.C.Hu J.Hua G.S.Huang J.S.Huang M.Huang Q.Y.Huang W.Q.Huang X.T.Huang X.J.Huang Y.B.Huang Y.S.Huang N.Hüsken V.Ivanov Q.P.Ji J.J.Jia S.Jia Z.K.Jia H.B.Jiang J.Jiang S.Z.Jiang J.B.Jiao Z.Jiao H.J.Jing X.L.Kang X.S.Kang B.C.Ke M.Kenzie A.Khoukaz I.Koop E.Kravchenko A.Kuzmin Y.Lei E.Levichev C.H.Li C.Li D.Y.Li F.Li G.Li G.Li H.B.Li H.Li H.N.Li H.J.Li H.L.Li J.M.Li J.Li L.Li L.Li L.Y.Li N.Li P.R.Li R.H.Li S.Li T.Li W.J.Li X.Li X.H.Li X.Q.Li X.H.Li Y.Li Y.Y.Li Z.J.Li H.Liang J.H.Liang Y.T.Liang G.R.Liao L.Z.Liao Y.Liao C.X.Lin D.X.Lin X.S.Lin B.J.Liu C.W.Liu D.Liu F.Liu G.M.Liu H.B.Liu J.Liu J.J.Liu J.B.Liu K.Liu K.Y.Liu K.Liu L.Liu Q.Liu S.B.Liu T.Liu X.Liu Y.W.Liu Y.Liu Y.L.Liu Z.Q.Liu Z.Y.Liu Z.W.Liu I.Logashenko Y.Long C.G.Lu J.X.Lu N.Lu Q.F.Lü Y.Lu Y.Lu Z.Lu P.Lukin F.J.Luo T.Luo X.F.Luo Y.H.Luo H.J.Lyu X.R.Lyu J.P.Ma P.Ma Y.Ma Y.M.Ma F.Maas S.Malde D.Matvienko Z.X.Meng R.Mitchell A.Nefediev Y.Nefedov S.L.Olsen Q.Ouyang P.Pakhlov G.Pakhlova X.Pan Y.Pan E.Passemar Y.P.Pei H.P.Peng L.Peng X.Y.Peng X.J.Peng K.Peters S.Pivovarov E.Pyata B.B.Qi Y.Q.Qi W.B.Qian Y.Qian C.F.Qiao J.J.Qin J.J.Qin L.Q.Qin X.S.Qin T.L.Qiu J.Rademacker C.F.Redmer H.Y.Sang M.Saur W.Shan X.Y.Shan L.L.Shang M.Shao L.Shekhtman C.P.Shen J.M.Shen Z.T.Shen H.C.Shi X.D.Shi B.Shwartz A.Sokolov J.J.Song W.M.Song Y.Song Y.X.Song A.Sukharev J.F.Sun L.Sun X.M.Sun Y.J.Sun Z.P.Sun J.Tang S.S.Tang Z.B.Tang C.H.Tian J.S.Tian Y.Tian y.tikhonov K.Todyshev T.Uglov V.Vorobyev B.D.Wan B.L.Wang B.Wang D.Y.Wang G.Y.Wang G.L.Wang H.L.Wang J.Wang J.H.Wang J.C.Wang M.L.Wang R.Wang R.Wang S.B.Wang W.Wang W.P.Wang X.C.Wang X.D.Wang X.L.Wang X.L.Wang X.P.Wang X.F.Wang Y.D.Wang Y.P.Wang Y.Q.Wang Y.L.Wang Y.G.Wang Z.Y.Wang Z.Y.Wang Z.L.Wang Z.G.Wang D.H.Wei X.L.Wei X.M.Wei Q.G.Wen X.J.Wen G.Wilkinson B.Wu J.J.Wu L.Wu P.Wu T.W.Wu Y.S.Wu L.Xia T.Xiang C.W.Xiao D.Xiao M.Xiao K.P.Xie Y.H.Xie Y.Xing Z.Z.Xing X.N.Xiong F.R.Xu J.Xu L.L.Xu Q.N.Xu X.C.Xu X.P.Xu Y.C.Xu Y.P.Xu Y.Xu Z.Z.Xu D.W.Xuan F.F.Xue L.Yan M.J.Yan W.B.Yan W.C.Yan X.S.Yan B.F.Yang C.Yang H.J.Yang H.R.Yang H.T.Yang J.F.Yang S.L.Yang Y.D.Yang Y.H.Yang Y.S.Yang Y.L.Yang Z.W.Yang Z.Y.Yang D.L.Yao H.Yin X.H.Yin N.Yokozaki S.Y.You Z.Y.You C.X.Yu F.S.Yu G.L.Yu H.L.Yu J.S.Yu J.Q.Yu L.Yuan X.B.Yuan Z.Y.Yuan Y.F.Yue M.Zeng S.Zeng A.L.Zhang B.W.Zhang G.Y.Zhang G.Q.Zhang H.J.Zhang H.B.Zhang J.Y.Zhang J.L.Zhang J.Zhang L.Zhang L.M.Zhang Q.A.Zhang R.Zhang S.L.Zhang T.Zhang X.Zhang Y.Zhang Y.J.Zhang Y.X.Zhang Y.T.Zhang Y.F.Zhang Y.C.Zhang Y.Zhang Y.Zhang Y.M.Zhang Y.L.Zhang Z.H.Zhang Z.Y.Zhang Z.Y.Zhang H.Y.Zhao J.Zhao L.Zhao M.G.Zhao Q.Zhao R.G.Zhao R.P.Zhao Y.X.Zhao Z.G.Zhao Z.X.Zhao A.Zhemchugov B.Zheng L.Zheng Q.B.Zheng R.Zheng Y.H.Zheng X.H.Zhong H.J.Zhou H.Q.Zhou H.Zhou S.H.Zhou X.Zhou X.K.Zhou X.P.Zhou X.R.Zhou Y.L.Zhou Y.Zhou Y.X.Zhou Z.Y.Zhou J.Y.Zhu K.Zhu R.D.Zhu R.L.Zhu S.H.Zhu Y.C.Zhu Z.A.Zhu V.Zhukova V.Zhulanov B.S.Zou Y.B.Zuo 《Frontiers of physics》 SCIE CSCD 2024年第1期1-154,共154页
The superτ-charm facility(STCF)is an electron–positron collider proposed by the Chinese particle physics community.It is designed to operate in a center-of-mass energy range from 2 to 7 GeV with a peak luminosity of... The superτ-charm facility(STCF)is an electron–positron collider proposed by the Chinese particle physics community.It is designed to operate in a center-of-mass energy range from 2 to 7 GeV with a peak luminosity of 0.5×10^(35) cm^(–2)·s^(–1) or higher.The STCF will produce a data sample about a factor of 100 larger than that of the presentτ-charm factory—the BEPCII,providing a unique platform for exploring the asymmetry of matter-antimatter(charge-parity violation),in-depth studies of the internal structure of hadrons and the nature of non-perturbative strong interactions,as well as searching for exotic hadrons and physics beyond the Standard Model.The STCF project in China is under development with an extensive R&D program.This document presents the physics opportunities at the STCF,describes conceptual designs of the STCF detector system,and discusses future plans for detector R&D and physics case studies. 展开更多
关键词 electron–positron collider tau-charm region high luminosity STCF detector conceptual design
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The ferroelectric field-effect transistor with negative capacitance 被引量:2
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作者 I.Luk’yanchuk A.Razumnaya +2 位作者 A.Sené y.tikhonov V.M.Vinokur 《npj Computational Materials》 SCIE EI CSCD 2022年第1期500-507,共8页
Integrating ferroelectric negative capacitance(NC)into the field-effect transistor(FET)promises to break fundamental limits of power dissipation known as Boltzmann tyranny.However,realizing the stable static negative ... Integrating ferroelectric negative capacitance(NC)into the field-effect transistor(FET)promises to break fundamental limits of power dissipation known as Boltzmann tyranny.However,realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a daunting task.The problem stems from the lack of understanding of how the fundamental origin of the NC due to the emergence of the domain state can be put in use for implementing the NC FET.Here we put forth an ingenious design for the ferroelectric domain-based field-effect transistor with the stable reversible static negative capacitance.Using dielectric coating of the ferroelectric capacitor enables the tunability of the negative capacitance improving tremendously the performance of the field-effect transistors. 展开更多
关键词 TRANSISTOR CAPACITANCE FERROELECTRIC
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