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Fabry-Perot interference and piezo-phototronic effect enhanced flexible MoS_(2) photodetector 被引量:3
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作者 Xuexia Chen Xun Yang +5 位作者 Qing Lou Yuan Zhang Yancheng Chen yacong lu Lin Dong Chong-Xin Shan 《Nano Research》 SCIE EI CSCD 2022年第5期4395-4402,共8页
Flexible photodetectors(PDs)are indispensable components for next-generation wearable electronics.Recently,two-dimensional(2D)materials have been implemented as functional flexible optoelectronic devices due to their ... Flexible photodetectors(PDs)are indispensable components for next-generation wearable electronics.Recently,two-dimensional(2D)materials have been implemented as functional flexible optoelectronic devices due to their characteristics of atomically thin layers,excellent flexibility,and strain sensitivity.In this work,we developed a flexible photodetector based on MoS_(2)/NiO heterojunction,and Fabry-Perot(F-P)and piezo-phototronic effect have been employed to enhance the responsivity(R)and external quantum efficiency(EQE)of the devices.The F-P effect is utilized to improve the optical absorption of the MoS_(2),resulting in an enhancement in the photoluminescence(PL)of monolayer MoS_(2) and the EQE of the photodetector by 30 and 130 times,respectively.The flexible photodetector exhibits an ultrahigh detectivity(D*)of 2.6×10^(14) Jones,which is the highest value ever reported for flexible MoS_(2) PDs.The piezo-potential of monolayer MoS_(2) decreases the valence band offset at the interface of MoS_(2)/NiO,which increases the transfer efficiency of the photon-generated carriers significantly.Under 1.17%tensile strain,the R of the flexible photodetector can be enhanced by 271%.This research may provide a universal strategy for the design and performance optimization of 2D materials heterostructures for flexible optoelectronics. 展开更多
关键词 flexible photodetector MoS_(2) Fabry-Perot(F-P)interference piezo-phototronic effect
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