Measurement of residual stress in a multi-layer semiconductor heterostructure by micro-Raman spectroscopy

Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface energy and even leading to structure failure. This work presents a methodological study on the measurement of residual stress in a multi-layer semiconductor heterostructure. Scanning electron microscopy（SEM）, micro-Raman spectroscopy（MRS）, and transmission electron microscopy（TEM） were applied to measure the geometric parameters of the multilayer structure. The relationship between the Raman spectrum and the stress/strain on the [100] and [110] crystal orientations was determined to enable surface and crosssection residual stress analyses, respectively. Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained.

Experimental analysis of crack tip fields in rubber materials under large deformation

A three-nested-deformation model is proposed to describe crack-tip fields in rubber-like materials with large deformation. The model is inspired by the distribution of the measured in-plane and out-of-plane deformation. The in- plane displacement of crack-tip fields under both Mode 1 and mixed-mode （Mode I-II） fracture conditions is measured by using the digital Moir6 method. The deformation character- istics and experimental sector division mode are investigated by comparing the measured displacement fields under differ- ent fracture modes. The out-of-plane displacement field near the crack tip is measured using the three-dimensional digital speckle correlation method.

Experimental investigation of electrode cycle performance and electrochemical kinetic performance under stress loading

Lithium-ion batteries suffer from mechano–electrochemical coupling problems that directly determine the battery life. In this paper, we investigate the electrode electrochemical performance under stress conditions, where seven tensile/compressive stresses are designed and loaded on electrodes, thereby decoupling mechanics and electrochemistry through incremental stress loads. Four types of multi-group electrochemical tests under tensile/compressive stress loading and normal package loading are performed to quantitatively characterize the effects of tensile stress and compressive stress on cycle performance and the kinetic performance of a silicon composite electrode. Experiments show that a tensile stress improves the electrochemical performance of a silicon composite electrode, exhibiting increased specific capacity and capacity retention rate, reduced energy dissipation rate and impedances, enhanced reactivity, accelerated ion/electron migration and diffusion, and reduced polarization. Contrarily, a compressive stress has the opposite effect, inhibiting the electrochemical performance. The stress effect is nonlinear, and a more obvious suppression via compressive stress is observed than an enhancement via tensile stress. For example, a tensile stress of 675 k Pa increases diffusion coefficient by 32.5%, while a compressive stress reduces it by 35%. Based on the experimental results, the stress regulation mechanism is analyzed. Tensile stress loads increase the pores of the electrode material microstructure, providing more deformation spaces and ion/electron transport channels. This relieves contact compressive stress, strengthens diffusion/reaction, and reduces the degree of damage and energy dissipation. Thus, the essence of stress enhancement is that it improves and optimizes diffusion, reaction and stress in the microstructure of electrode material as well as their interactions via physical morphology.

Mechanical behavior study of microdevice and nanomaterials by Raman spectroscopy:a review

With the rapid development of micro/nano manufacturing technology and nanomaterials,the accurate measurement of the mechanical properties and behaviors at the micro-nano scale represents a new field of mechanical experiments.Raman spectroscopy,which is based on lattice dynamics theory,is applicable to the detection of the statistical information of the lattice structure deformation within the measuring points.Due to its peculiarities,such as non-destructiveness,convenience and high-resolution,this technology allows the on-line in situ measurement of residual stress in microstructures caused by processing and can also achieve the real-time deformation of graphene,carbon nanotubes and other nanomaterials under force loading.In recent years,mechanical measurements based on Raman spectroscopy technology have developed rapidly.In this review,Raman-based stress measurement theories for several commonly used materials are briefly described.Applications related to the residual stress measurements of microstructure and experimental investigations of the mechanical properties of low-dimensional nanomaterials are then reviewed.Finally,the development trend of this method is proposed.