Pressure-Induced Distinct Self-Trapped Exciton Emission in Sb^(3+)-Doped Cs_(2)NaInCl_(6)Double Perovskite

The Cs_(2)NaInCl_(6) double perovskite is one of the most promising lead-free perovskites due to its exceptional stability and straightforward synthesis.However,it faces challenges related to inefficient photoluminescence.Doping and high pressure are employed to tailor the optical properties of Cs_(2)NaInCl_(6).Herein,Sb^(3+)doped Cs_(2)NaInCl_(6)(Sb^(3+):Cs_(2)NaInCl_(6)) was synthesized and it exhibits blue emission with a photoluminescence quantum yield of up to 37.3%.Further,by employing pressure tuning,a blue stable emission under a very wide range from 2.7 GPa to 9.8 GPa is realized in Sb^(3+):Cs_(2)NaInCl_(6).Subsequently,the emission intensity of Sb^(3+):Cs_(2)NaInCl_(6) experiences a significant increase(3.3 times)at 19.0 GPa.It is revealed that the pressure-induced distinct emissions can be attributed to the carrier self-trapping and detrapping between Cs_(2)NaInCl_(6) and Sb^(3+).Notably,the lattice compression in the cubic phase inevitably modifies the band gap of Sb^(3+):Cs_(2)NaInCl_(6).Our findings provide valuable insights into effects of the high pressure in further boosting unique emission characteristics but also offer promising opportunities for development of doped double perovskites with enhanced optical functionalities.

High-Temperature Superconductivity in Doped Boron Clathrates

The recent discoveries of near-room-temperature superconductivity in clathrate hydrides present compelling evidence for the reliability of theory-orientated conventional superconductivity.Nevertheless,the harsh pressure conditions required to maintain such high T_(c)limit their practical applications.To address this challenge,we conducted extensive first-principles calculations to investigate the doping effect of the recently synthesized LaB_(8)clathrate,intending to design high-temperature superconductors at ambient pressure.Our results demonstrate that these clathrates are highly promising for high-temperature superconductivity owing to the coexistence of rigid boron covalent networks and the tunable density of states at the Fermi level.Remarkably,the predicted T_(c)of BaB_(8)could reach 62 K at ambient pressure,suggesting a significant improvement over the calculated T_(c)of 14 K in LaB_(8).Moreover,further calculations of the formation enthalpies suggest that BaB_(8)could be potentially synthesized under high-temperature and high-pressure conditions.These findings highlight the potential of doped boron clathrates as promising superconductors and provide valuable insights into the design of light-element clathrate superconductors.

Structural and electrical transport properties of Dirac-like semimetal PdSn4 under high pressure

We conducted in-situ high-pressure synchrotron x-ray diffraction(XRD) and electrical transport measurements on Dirac-like semimetal Pd Sn4 in diamond anvil cells with quasi-hydrostatic pressure condition up to 44.5 GPa–52.0 GPa. The XRD data show that the ambient orthorhombic phase(Ccca) is stable with pressures to 44.5 GPa, and the lattice parameters and unit-cell volume decrease monotonously upon compression. The temperature dependence of the resistance exhibits a metallic conduction and follows a Fermi-liquid behavior below 50 K, both of which keep unchanged upon compression to 52.0 GPa. The magnetoresistance curve at 5 K maintains a linear feature in a magnetic field range of 2.5 T–7 T with increasing pressure to 20.0 GPa. Our results may provide pressure-transport constraints on the robustness of the Dirac fermions.

Structural and electrical transport properties of charge density wave material LaAgSb_(2)under high pressure

Layered lanthanum silver antimonide LaAgSb_(2)exhibits both charge density wave(CDW)order and Dirac-cone-like band structure at ambient pressure.Here,we systematically investigate the pressure evolution of structural and electronic properties of LaAgSb_(2)single crystal.We show that the CDW order is destabilized under compression,as evidenced by the gradual suppression of magnetoresistance.At P_(C)~22 GPa,synchrotron x-ray diffraction and Raman scattering measurements reveal a structural modification at room-temperature.Meanwhile,the sign change of the Hall coefficient is observed at 5 K.Our results demonstrate the tunability of CDW order in the pressurized LaAgSb_(2)single crystal,which can be helpful for its potential applications in the next-generation devices.

Crystalline-amorphization-recrystallization structural transition and emergent superconductivity in van der Waals semiconductor SiP under compression

van der Waals(vdW)semiconductors have gained significant attention due to their unique physical properties and promising applications,which are embedded within distinct crystallographic symmetries.Here,we report a pressure-induced crystallineamorphization-recrystallization transition under compression in binary vdW semiconductor SiP.Upon compression to 52 GPa,bulk SiP undergoes a consecutive phase transition from pristine crystalline to amorphous phase,ultimately to recrystallized phase.By employing synchrotron X-ray diffraction experiments in conjunction with high-pressure crystal structure searching techniques,we reveal that the recrystallized Si P hosts a tetragonal structure(space group I4mm)and further transforms partially into a cubic phase(space group Fm3m).Consistently,electrical transport and alternating-current magnetic susceptibility measurements indicate the presence of three superconducting phases,which are embedded in separate crystallographic symmetries—the amorphous,tetragonal,and cubic structures.Furthermore,a high superconducting transition temperature of 12.3 K is observed in its recovered tetragonal phase during decompression.Our findings uncover a novel phase evolution path and elucidate a pressure-engineered structure-property relationship in vdW semiconductor SiP.These results not only offer a new platform to explore the transformation between different structures and functionalities,but also provide new opportunities for the design and exploration of advanced devices based on vdW materials.

Minimal-invasive enhancement of auditory perception by terahertz wave modulation

Hearing impairment is a common disease affecting a substantial proportion of the global population.Currently,the most effective clinical treatment for patients with sensorineural deafness is to implant an artificial electronic cochlea.However,the improvements to hearing perception are variable and limited among healthy subjects.Moreover,cochlear implants have disadvantages,such as crosstalk derived from the currents that spread into non-target tissue between the electrodes.Here,in this work,we describe terahertz wave modulation,a new and minimally invasive technology that can enhance hearing perception in animals by reversible modulation of currents in cochlear hair cells.Using single-cell electrophysiology,guinea pig audiometry,and molecular dynamics simulations,we show that THM can reversibly increase mechano-electrical transducer currents(~50%higher)and voltage-gated K^(+)currents in cochlear hair cells through collective resonance of–C=O groups.In addition,measurement of auditory brainstem response(ABR)in guinea pigs treated with THM indicated a~10 dB increase in hearing sensitivity.This study thus reports a new method of highly spatially selective hearing enhancement without introducing any exogeneous gene,which has potential applications for treatment of hearing disorders as well as several other areas of neuroscience.