Removal of carbonyl sulfide from CO_2 stream using AgNO_3-modified NaZSM-5

Removal of carbonyl sulfide(COS) from CO2 stream is significant for the production and utilization of food grade CO2. This study investigates the adsorption performance of Ag/NaZSM-5 as adsorbent prepared by incipient wetness impregnation for the removal of COS from a CO2 stream in a fixed-bed adsorption apparatus. Effects of various conditions on the preparation of adsorbent, adsorption and desorption were intensively examined. The results revealed that COS can be removed to below 1×10-9from a CO2stream(1000 ppm COS/CO2) using Ag/NaZSM-5(10 wt% AgNO3) with an adsorption capacity of 12.86 mg·g-1. The adsorbent can be fully regenerated using hot air at 450 C. The adsorption ability remained stable even after eight cycles of regeneration.

Patterns of crop-specific fertilizer-nitrogen losses and opportunities for sustainable mitigation:A quantitative overview of 15N-tracing studies

Pattern and mitigation potential of crop-specific fertilizer-N losses were assessed.China showed high fertilizer-N losses due to high N application rates and low SOC.MAP,SOC,and soil pH are key parameters affecting fertilizer-N losses.At a given application rate,soils with higher SOC have lower fertilizer-N losses.Optimal N rate combined with SOC improvement could cut 34.8%-59.6%of N losses.

Aqueous-solution-driven HfGdO_x gate dielectrics for low-voltage-operated α-InGaZnO transistors and inverter circuits

In this work,a non-toxic and environmentally friendly aqueous-solution-based method has been adopted to prepare gadolinium-doped hafnium oxide(HfO2) gate dielectric thin films.By adjusting the gadolinium(Gd) doping concentration,the oxygen vacancy content,band offset,interface trap density,and dielectric constant of HfGdOx(HGO) thin films have been optimized.Results have confirmed that HGO thin films with Gd doping ratio of 15 at.% have demonstrated appropriate dielectric constant of 27.1 and lower leakage current density of 5.8×10-9 A cm-2.Amorphous indium-gallium-zinc oxide(α-IGZO) thin film transistors(TFTs) based on HGO thin film(Gd:15 at.%) as gate dielectric layer have exhibited excellent electrical performance,such as larger saturated carrier mobility(μsat) of 20.1 cm2 V-1 S-1,high on/off current ratio(Ion/Ioff) of ~108,smaller sub-threshold swing(SS) of 0.07 V decade-1,and a negligible threshold voltage shift(ΔVTH) of 0.08 V under positive bias stress(PBS) for 7200 s.To confirm its potential application in logic circuit,a resistor-loaded inverter based on HGO/α-IGZO TFTs has been constructed.A high voltage gain of 19.8 and stable full swing characteristics have been detected.As a result,it can be concluded that aqueous-solution-driven HGO dielectrics have potential application in high resolution flat panel displays and ultra-large-scale integrated logic circuits.

Electrochemical Properties and Microstructure of Al/Pb–Ag and Al/Pb–Ag–Co Anodes for Zinc Electrowinning

The Al/Pb-0.8%Ag and Al/Pb-0.75%Ag-0.03%Co （in mass fraction） anodes used in zinc electrowinning are prepared through the electrodeposition of lead methanesulfonate electrolyte onto an aluminum matrix. The results of anode polarization curves, Tafel curves, and EIS characterizations indicated that the Al/Pb-0.75%Ag-0.03%Co anode has higher electrocatalytic activity and corrosion resistance than the Al/Pb-0.8%Ag anode. SEM observations on the fruit surfaces demonstrated the crystals on the Al/Pb-0.8%Ag anode are larger than on the Al/Pb-0.75%Ag-0.03%Co anode. After 24 h of anodic polarization, SEM observations and XRD analysis showed that the MnO2-PbO2 layer on the Al/Pb-0.75%Ag- 0.03%Co anode surface is characterized by dendritic crystals, and the PbSO4-PbO2 layer under the MnO2-PbO2 layer is characterized by uniform and chaotic orientation tetragonal symmetry crystallites of PbSO4. However, the MnO2-PbO2 layer on the Al/Pb-0.8%Ag anode surface is characterized by granular crystals, and the PbSO4-PbO2 layer under the MnO2 PbO2 layer is characterized by well-organized orientation crystallites of PbSO4, which are concentrated in certain zones.

Illumination interface stability of aging-diffusion-modulated high performance InZnO/DyO_(x) transistors and exploration in digital circuits

In current study,the rare-reported solution-driven DyO_(x)films have been prepared to act as the dielectric layer of high performance InZnO/DyO_(x)thin film transistors(TFTs).Annealing temperature dependent thermal decomposition,morphology,crystallization behavior,and chemical compositions of DyO_(x) and InZnO films have been investigated respectively.Results have demonstrated that air-annealed InZnO/DyO_(x)TFTs possess the improved electrical performance,including ultrahigh on/off current ratio of 1×10^(9),larger saturation mobility of 12.6 cm^(2) V-1 s^(-1) and negligible hysteresis after 10 d aging diffusion in the relative humidity(RH)of 40%air ambient,which has been explored by the variable range-hopping(VRH)percolation model and energy band theory.The distinct illumination bias stability can be attributed to the generated various interface defects and concluded that the white light illuminated TFT behaves the higher stability with the smaller threshold voltage shift of 0.25 V.To confirm its feasible application in digital circuit,a resistor-loaded inverter based on InZnO/DyO_(x)TFTs has been constructed.A high gain of 10.1 and good dynamic response behavior have been detected at a low operating voltage of 2 V.As a result,it can be inferred that diffusion-induced enhanced carrier transporting mechanism is an economical and effective method to optimize the electrical performance of solution-derived InZnO/DyO_(x)TFTs,indicating its potential application prospects in flexible transparent electronics with low power consumption.

Diffusion-activated high performance ZnSnO/Yb_(2)O_(3) thin film transistors and application in low-voltage-operated logic circuits

The flourishing metal-oxide high-k dielectric materials have been regarded as the vital components of low voltage operated flexible transparent electronic devices.We herein report that ytterbium oxide(Yb_(2)O_(3))and ZnSnO(ZTO)thin films were firstly integrated into ZTO-based thin film transistors(TFTs)with superior performance.Results have indicated that the 500℃-annealed ZTO/Yb_(2)O_(3) TFTs possess the large saturation mobility of 9.1 cm^(2) V-1S^(-1) and the high on/off current ratio of 2.15×10^(7),which even surpass those of reported In-based TFTs.The deteriorative electrical properties in the aging process can be attributed to the carrier capture mechanism.However,the 460℃-processed TFTs demonstrate a tenfold increase in saturated mobility and an increase in on/off current ratio after 10 days aging.The inspiring electrical properties are attributed to the diffusion-activated carrier enhancement mechanism and electrons donor role of water molecular,which introduces a facile method to boost the device performance at lower processing temperatures.The neglected threshold voltage variations of 0.06 V and-0.2V have been detected after bias stability experiments.The superior bias stability can be attributed to the charge delay effect induced by the continuous electric field.Meanwhile,the ultrahigh on/off current ratio of 1.1×10^(7) and the recoverable transferring performance have verified the aging-activated mechanism.To confirm its potential application in digital circuits,a resistor-loaded inverter with gain of 5.6 has been constructed and good dynamic response behavior have been detected at a low voltage of 2V.As a result,it can be concluded that the high temperature annealing TFTs need immediate encapsulation,while the performance of the lower temperature processing samples can be optimized after aging treatment,indicating the potential prospect in low power consumption large-scale flexible transparent devices.