WPA1 encodes a vWA domain protein that regulates wheat plant architecture

Plant height,spike,leaf,stem and grain morphologies are key components of plant architecture and related to wheat yield.A wheat(Triticum aestivum L.)mutant,wpa1,displaying temperaturedependent pleiotropic developmental anomalies,was isolated.The WPA1 gene,encoding a von Willebrand factor type A(vWA)domain protein,was located on chromosome arm 7DS and isolated by map-based cloning.The functionality of WPA1 was validated by multiple independent EMS-induced mutants and gene editing.Phylogenetic analysis revealed that WPA1 is monocotyledon-specific in higher plants.The identification of WPA1 provides opportunity to study the temperature regulated wheat development and grain yield.

Genome-wide analysis and identification of cytokinin oxidase/dehydrogenase(CKX) gene family in foxtail millet(Setaria italica)

Cytokinin oxidase/dehydrogenase(CKX; EC.1.5.99.12) regulates cytokinin(CK) level in plants and plays an essential role in CK regulatory processes. CKX proteins are encoded by a small gene family with a varying number of members in different plants. In spite of their physiological importance, systematic analyses of SiCKX genes in foxtail millet have not yet been examined. In this paper, we report the genome wide isolation and characterization of SiCKXs using bioinformatic methods. A total of 11 members of the family were identified in the foxtail millet genome. SiCKX genes were distributed in seven chromosomes(chromosome 1, 3, 4, 5, 6, 7, and 11). The coding sequences of all the SiCKX genes were disrupted by introns, with numbers varying from one to four. These genes expanded in the genome mainly due to segmental duplication events. Multiple alignment and motif display results showed that all SiCKX proteins share FAD- and CK-binding domains. Putative cis-elements involved in Ca2+-response, abiotic stress response, light and circadian rhythm regulation, disease resistance and seed development were present in the promoters of SiCKX genes. Expression data mining suggested that SiCKX genes have diverse expression patterns. Real-time PCR analysis indicated that all 11 SiCKX genes were up-regulated in embryos under 6-BA treatment, and some were NaCl or PEG inducible. Collectively, these results provide molecular insights into CKX research in plants.

Improvement of copper tolerance of Arabidopsis by transgenic expression of an allene oxide cyclase gene,GhA OC1, in upland cotton(Gossypium hirsutum L.)

Allene oxide cyclase(AOC, E 5.3.99.6) is an essential enzyme in the jasmonic acid(JA)biosynthetic pathway and mediates a wide range of adaptive responses. In this report, five AOC genes(Gh AOC1–Gh AOC5) were cloned from upland cotton(Gossypium hirsutum L.),sequenced, and characterized. Real-time PCR analysis indicated that the transcripts of Gh AOCs were abundantly expressed in roots and less in fibers, and regulated in cotton plants under methyl jasmonate(Me JA) and Cu Cl2 stresses. To investigate the role of Gh AOC under copper stress, transgenic Arabidopsis plants overexpressing cotton Gh AOC1 under control of the Cauliflower mosaic virus 35S(Ca MV 35S) promoter were generated. Compared to untransformed plants, Gh AOC1-overexpressing Arabidopsis thaliana plants exhibited markedly higher survival rate, shoot fresh weight, shoot dry weight, and photosynthetic efficiency, and reduced cell membrane damage and lipid peroxidation under copper stress.This study provides the first evidence that Gh AOC1 plays an important role in copper stress tolerance.

In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity

The research of ultraviolet photodetectors(UV PDs)have been attracting extensive attention,due to their important applications in many areas.In this study,PtSe2/GaN heterojunction is in-situ fabricated by synthesis of large-area vertically standing two-dimensional(2D)PtSe2 film on n-GaN substrate.The PtSe2/GaN heterojunction device demonstrates excellent photoresponse properties under illumination by deep UV light of 265 nm at zero bias voltage.Further analysis reveals that a high responsivity of 193 mA·W^-1,an ultrahigh specific detectivity of 3.8 × 10^14 Jones,linear dynamic range of 155d B and current on/off ratio of^10^8,as well as fast response speeds of 45/102μs were obtained at zero bias voltage.Moreover,this device response quickly to the pulse laser of 266 nm with a rise time of 172 ns.Such high-performanee PtSe2/GaN heteroj u nction UV PD demonstrated in this work is far superior to previously reported results,suggesting that it has great potential for deep UV detection.