The action mechanism of the work done by the electric field force on moving charges to stimulate the emergence of carrier generation/recombination in a PN junction

It is discovered that the product of the current and the electric field in a PN junction should be regarded as the rate of work(power)done by the electric field force on moving charges(hole current and electron current),which was previously misinterpreted as solely a Joule heating effect.We clarify that it is exactly the work done by the electric field force on the moving charges to stimulate the emergence of non-equilibrium carriers,which triggers the novel physical phenomena.As regards to Joule heat,we point out that it should be calculated from Ohm’s law,rather than simply from the product of the current and the electric field.Based on this understanding,we conduct thorough discussion on the role of the electric field force in the process of carrier recombination and carrier generation.The thermal effects of carrier recombination and carrier generation followed are incorporated into the thermal equation of energy.The present study shows that the exothermic effect of carrier recombination leads to a temperature rise at the PN interface,while the endothermic effect of carrier generation causes a temperature reduction at the interface.These two opposite effects cause opposite heat flow directions in the PN junction under forward and backward bias voltages,highlighting the significance of managing device heating phenomena in design considerations.Therefore,this study possesses referential significance for the design and tuning on the performance of piezotronic devices.

The mechanism to reform dynamic performance of an elastic wave-front in a piezoelectric semiconductor by the wave-carrier interaction induced from static biasing fields

The propagation of an elastic wave(EW)in a piezoelectric semiconductor(PSC)subjected to static biasing fields is investigated.It is found that there exist two coupling waves between electric field and charge carriers.One is stimulated by the action of the polarized electric field in the EW-front on charge carriers(EFC),and the other is stimulated by the action of initial electric field in biasing fields on dynamic carriers(IEC).Obviously,the latter is a man-made and tunable wave-carrier interaction.A careful study shows that IEC can play a leading role in remaking dynamic performance of the wave-front and an inter-medium role in transferring energy from biasing fields to EW-fronts.Hence,a method is proposed to reform the EW performance by biasing-fields:reforming the dispersivity of EW-fronts by promoting competition between IEC and EFC and inverting the dissipation by the IEC to transfer energy from biasing fields to EWfronts.The corresponding tuning laws on the phase-frequency characteristics of an EW show that the wave velocity can be regulated smaller than the pure EW velocity at a lowfrequency and larger than the pure piezoelectric wave velocity at a high-frequency.As for regulating the amplitude-frequency characteristics of the EW by the IEC,analyses show that EWs can obtain amplification only for those with relatively high vibration frequencies(small wave lengths).The studies will provide guidance for theoretical analysis of waves propagating in PSCs and practical application and design of piezotronic devices.

COUPLED ANALYSIS FOR THE HARVESTING STRUCTURE AND THE MODULATING CIRCUIT IN A PIEZOELECTRIC BIMORPH ENERGY HARVESTER

The authors analyze a piezoelectric energy harvester as an electro-mechanically coupled system. The energy harvester consists of a piezoelectric bimorph with a concentrated mass attached at one end, called the harvesting structure, an electric circuit for energy storage, and a rectifier that converts the AC output of the harvesting structure into a DC input for the storage circuit. The piezoelectric bimorph is assumed to be driven into flexural vibration by an ambient acoustic source to convert the mechanical energies into electric energies. The analysis indicates that the performance of this harvester, measured by the power density, is characterized by three important non-dimensional parameters, i.e., the non-dimensional inductance of the storage circuit, the non-dimensional aspect ratio （length/thickness） and the non-dimensional end mass of the harvesting structure. The numerical results show that： （1） the power density can be optimized by varying the non-dimensional inductance for each fixed non-dimensional aspect ratio with a fixed non-dimensional end mass; and （2） for a fixed non-dimensional inductance, the power density is maximized if the non-dimensional aspect ratio and the non-dimensional end mass are so chosen that the harvesting structure, consisting of both the piezoelectric bimorph and the end mass attached, resonates at the frequency of the ambient acoustic source.

Stress-induced potential barriers and charge distributions in a piezoelectric semiconductor nanofiber

The performance of a piecewise-stressed ZnO piezoelectric semiconductor nano?ber is studied with the multi-?eld coupling theory. The ?elds produced by equal and opposite forces as well as sinusoidally distributed forces are examined. Speci?c distributions of potential barriers, wells, and regions with effective polarization charges are found. The results are fundamental for the mechanical tuning on piezoelectric semiconductor devices and piezotronics.

Electronic band energy of a bent ZnO piezoelectric semiconductor nanowire

The electric band energy variation in a bent piezoelectric semiconductor(PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band Hamiltonian.By considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss’ s law. Numerical examples are carried out for an n-type Zn O nanowire in different locations induced by an applied concentrated end force. They include the electric potential, heavy hole(HH), light hole(LH), spin-orbit split-off(SO),and conduction band(CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover,at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics.

Coupled vibrations and frequency shift of compound system consisting of quartz crystal resonator in thickness-shear motions and micro-beam array immersed in liquid

The dynamic characteristics of a quartz crystal resonator（QCR） in thicknessshear modes（TSM） with the upper surface covered by an array of micro-beams immersed in liquid are studied. The liquid is assumed to be inviscid and incompressible for simplicity. Dynamic equations of the coupled system are established. The added mass effect of liquid on micro-beams is discussed in detail. Characteristics of frequency shift are clarified for different liquid depths. Modal analysis shows that a drag effect of liquid has resulted in the change of phase of interaction（surface shear force）, thus changing the system resonant frequency. The obtained results are useful in resonator design and applications.

A full-coupling model of PN junctions based on the global-domain carrier motions with inclusion of the two metal/semiconductor contacts at endpoints

A full-coupling model on the current-voltage(J-V)characteristics of PN junctions is put forward in the paper by taking into account both the whole junction and the two electrode regions consisting of metal/semiconductor(M/S)contacts.The depletion layer assumption proposed by the Shockley model is discarded.Gauss’law on the electric potential and the electric field is applied in the whole junction region such that the majority-carrier currents inside and outside the P/N barrier region are able to be exactly defined and clearly calculated.Then,the stable continuity equations of the electron and hole currents are established to show the current conversion between minority-and majority-carriers inside the whole PN junction region.By analyzing all the conversion procedure,the J-V characteristics of a PN junction are obtained with good agreement to the experimental results,which are closely dependent on the minority-carrier lifetime and doping concentrations.Obviously,the study on this topic possesses referential significance to mechanically tuning the performance of piezoelectric PN junctions and piezotronic devices.

HIGH-FREQUENCY VIBRATIONS OF CORRUGATED CYLINDRICAL PIEZOELECTRIC SHELLS

Coupled extensional and flexural cylindrical vibrations of a corrugated cylindrical piezoelectric shell consisting of multiple pieces of circular cylindrical surfaces smoothly connected along their generatrix are studied. To validate the results for the case of relatively thick shells or equivalently high-frequency modes with short wavelengths, existing analysis is extended by considering shear deformation and rotatory inertia. An analytical solution is obtained. Based on the solution, resonant frequencies and mode shapes are calculated.

Influence of surface micro-beams with large deflection on the resonance frequency of a quartz crystal resonator in thickness-shear mode vibrations

We study the dynamic behavior of a quartz crystal resonator （QCR） in thickness-shear vibrations with the upper surface covered by an array of micro-beams （MBs） under large deflection. Through taking into account the continuous conditions of shear force and bending moment at the interface of MBs/resonator, dependences of frequency shift of the compound QCR system versus material parameter and geometrical parameter are illustrated in detail for nonlinear and linear vibrations. It is found that the frequency shift produces a little right （left） translation for increasing elastic modulus （length/radius ratio） of MBs. Moreover, the frequency right （left） translation distance caused by nonlinear deformation becomes more serious in the second-order mode than in the first-order one,

Effects of mechanical loadings on the performance of a piezoelectric hetero-junction

A fully-coupled model for a piezoelectric hetero-junction subjected to a pair of stresses is proposed by discarding the depletion layer approximation.The effect of mechanical loadings on PN junction performance is discussed in detail.Numerical examples are carried out for a p-Si/ZnO-n hetero-junction under a pair of stresses acting on the ntype ZnO portion near the PN interface,where ZnO has the piezoelectric property while Si is not.It is found that the bottom of conduction band is lowered/raised near the two loading points due to the decrease/increase in the electron potential energy there induced by a tensile-stress mode via sucking in majority-carriers from two outside regions,which implies appearance of a potential barrier and a potential well near two loading points.Furthermore,the barrier height and well depth gradually become large with increasing tensile stress such that more and more electrons/holes are inhaled in loading region from the n-/p-zone,respectively.Conversely,rising/dropping of conduction band bottom is brought out near the two loading points by a compressive-stress mode due to the increase/decrease in the potential energy of electrons by pumping out the majority-carriers from the loading region to the two outside regions.Therefore,a potential well and a potential barrier are induced near the two loading points,such that more and more electrons/holes are driven away from the loading region to the n-zone/p-zone,respectively,with the increasing compressive stress.These effects are important to tune the carrier recombination rate near the PN interface.Thus,the present study possesses great referential significance to piezotronic devices.

Electric admittance analysis of quartz crystal resonator in thickness-shear mode induced by array of surface viscoelastic micro-beams

The electric admittance of a compound system composed of a thickness-shear mode （TSM） quartz crystal resonator （QCR） and an array of surface viscoelastic micro-beams （MBs） is studied. The governing equations of the MBs are derived from the Timoshenko-beam theory in consideration of shear deformation. The electrical admittance is described directly in terms of the physical properties of the surface epoxy resin （SU-8） MBs from an electrically forced vibration analysis. It is found that both the inertia effect and the constraint effect of the MBs produce competitive influence on the resonant frequency and admittance of the compound QCR system. By further comparing the numerical results calculated from the Timoshenko-beam model with those from the Euler-beam model, the shear deformation is found to lead to some deviation of an admittance spectrum. The deviations are revealed to be evident around the admittance peak（s） and reach the maximum when a natural frequency of the MBs is identical to the fundamental frequency of the QCR. Besides, a higher order vibration mode of the MBs corresponds to a larger deviation at the resonance.

DYNAMIC CHARACTERISTICS OF AXIALLY-SYMMETRICAL ANNULAR CORRUGATED SHELL PIEZOELECTRIC TRANSDUCERS

The coupled extensional and flexural vibrations of an annular corrugated shell piezoelectric transducer consisting of multiple circularly-annular surfaces smoothly connected along the interfaces were investigated in the paper. Only a time-harmonic voltage is applied across two electrodes of the piezoelectric shell as the external loading. A theoretical solution was obtained using the classical shell theory. Based on the solution, basic vibration characteristics of resonant frequencies, mode shapes were calculated and examined.

NONLINEAR ANALYSIS OF A 5-LAYER BEAM-LIKE PIEZOELECTRIC TRANSFORMER NEAR RESONANCE

The paper examines the weakly nonlinear behavior of a 5-layer beam-like piezo- electric transformer operating near resonance, where the main structure of the device consists of properly poled and electroded flexible piezoceramic four-layers separated by a central metallic layer. Nonlinear effects of the large deflection to induce the incidental implane extension near res- onance are considered, which is shown that on one side of the resonant frequency the output-input relation becomes nonlinear, and the other side output voltage experiences jumps.

ON THE INTERACTION BETWEEN A QUARTZ CRYSTAL RESONATOR AND AN ARRAY OF MICRO-BEAMS IN THICKNESS-SHEAR VIBRATIONS

We studied the coupled dynamic behavior of a quartz-crystal-resonator （QCR）/micro- beams system in the thickness-shear motions. Through taking into account the couple stress in the dynamic equations of the quartz plate, both continuous conditions of shear force and bending moment at the resonator/micro-beams interface are realized. Frequency shift of the compound QCR system induced by micro-beams is studied in detail. The obtained results are useful in device design and frequency-stability analysis of quartz crystal resonators.