The effects of hot extrusion and addition of Al_(2)O_(3p) on both microstructure and tribological behavior of 7075 composites were investigated via optical microscopy(OM),scanning electron microscopy(SEM),energy dispe...The effects of hot extrusion and addition of Al_(2)O_(3p) on both microstructure and tribological behavior of 7075 composites were investigated via optical microscopy(OM),scanning electron microscopy(SEM),energy dispersive spectrometry(EDS),and transmission electron microscopy(TEM).The experimental consequences reveal that the optimal addition of Al_(2)O_(3p) was 2 wt%.After hot extrusion,the Mg(Zn,Cu,Al)2 phases partially dissolve into the matrix and generate many uniformly distributed aging precipitation particles,the Al_(7)Cu_(2)Fe phases are squeezed and broken,and the Al_(2)O_(3p) become uniform distribution.The microhardness of as-extruded 2 wt%Al_(2)O_(3p)/7075 composites reaches HV 170.34,increased by 41.5%than as-cast composites.The wear rate of as-extruded 2 wt%Al_(2)O_(3p)/7075 composites is further lower than that of as-cast composites under the same condition.SEM-EDS analyses reveal that the reinforced wear resistance of composites can put down to the protective effect of the Al_(2)O_(3p) reinforced transition layer.After hot extrusion,the transition layer becomes stable,which determines the reinforced wear resistance of the as-extruded composites.展开更多
Fabrication of GaAs/Si heterostructures and their photoelectric properties are investigated by Raman, photoluminescence and Hall-effect measurements. The crystallinity of GaAs epilayers grown on Si substrate is signif...Fabrication of GaAs/Si heterostructures and their photoelectric properties are investigated by Raman, photoluminescence and Hall-effect measurements. The crystallinity of GaAs epilayers grown on Si substrate is significantly affected by the substrate orientation and the growth method. The photoelectric properties of GaAs epilayers grown on Si (211) substrates deposited by using a two-step growth method are improved. These results indicate that GaAs epilayers grown on Si (100) and Si (211) substrates by using two-step growth method are promising for potential applications in high-speed and high-frequency photoelectric devices.展开更多
基金Project(51965040)supported by the National Natural Science Foundation of ChinaProject(20181BAB206026)supported by the National Science Foundation of Jiangxi Province,China。
文摘The effects of hot extrusion and addition of Al_(2)O_(3p) on both microstructure and tribological behavior of 7075 composites were investigated via optical microscopy(OM),scanning electron microscopy(SEM),energy dispersive spectrometry(EDS),and transmission electron microscopy(TEM).The experimental consequences reveal that the optimal addition of Al_(2)O_(3p) was 2 wt%.After hot extrusion,the Mg(Zn,Cu,Al)2 phases partially dissolve into the matrix and generate many uniformly distributed aging precipitation particles,the Al_(7)Cu_(2)Fe phases are squeezed and broken,and the Al_(2)O_(3p) become uniform distribution.The microhardness of as-extruded 2 wt%Al_(2)O_(3p)/7075 composites reaches HV 170.34,increased by 41.5%than as-cast composites.The wear rate of as-extruded 2 wt%Al_(2)O_(3p)/7075 composites is further lower than that of as-cast composites under the same condition.SEM-EDS analyses reveal that the reinforced wear resistance of composites can put down to the protective effect of the Al_(2)O_(3p) reinforced transition layer.After hot extrusion,the transition layer becomes stable,which determines the reinforced wear resistance of the as-extruded composites.
基金National Natural Science Foundation of China(10274026) Korea Science and Engineering Foundation of theQuantum-functional Semiconductor Research Center of Dongguk University
文摘Fabrication of GaAs/Si heterostructures and their photoelectric properties are investigated by Raman, photoluminescence and Hall-effect measurements. The crystallinity of GaAs epilayers grown on Si substrate is significantly affected by the substrate orientation and the growth method. The photoelectric properties of GaAs epilayers grown on Si (211) substrates deposited by using a two-step growth method are improved. These results indicate that GaAs epilayers grown on Si (100) and Si (211) substrates by using two-step growth method are promising for potential applications in high-speed and high-frequency photoelectric devices.
