The water-soluble TF3 component from Eupolyphaga sinensis Walker promotes tibial fracture healing in rats by promoting osteoblast proliferation and angiogenesis

Objective:To determine the active components of Eupolyphaga sinensis Walker(Tu Bie Chong)and explore the mechanisms underlying its fracture-healing ability.Methods: A modified Einhorn method was used to develop a rat tibial fracture model.Progression of bone healing was assessed using radiological methods.Safranin O/fast green and CD31 immunohistochemical staining were performed to evaluate the growth of bone cells and angiogenesis at the fracture site.Methylthiazoletetrazolium blue and wound healing assays were used to analyze cell viability and migration.The Transwell assay was used to explore the invasion capacity of the cells.Tubule formation assays were used to assess the angiogenesis capacity of human vascular endothelial cells(HUVECs).qRT-PCR was used to evaluate the changes in gene transcription levels.Results: Tu Bie Chong fraction 3(TF3)significantly shortened the fracture healing time in model rats.X-ray results showed that on day 14,fracture healing in the TF3 treatment group was significantly better than that in the control group(P=.0086).Tissue staining showed that cartilage growth and the number of H-shaped blood vessels at the fracture site of the TF3 treatment group were better than those of the control group.In vitro,TF3 significantly promoted the proliferation and wound healing of MC3T3-E1s and HUVECs(all P<.01).Transwell assays showed that TF3 promoted the migration of HUVECs,but inhibited the migration of MC3T3-E1 cells.Tubule formation experiments confirmed that TF3 markedly promoted the ability of vascular endothelial cells to form microtubules.Gene expression analysis revealed that TF3 significantly promoted the expression of VEGFA,SPOCD1,NGF,and NGFR in HUVECs.In MC3T3-E1 cells,the transcript levels of RUNX2 and COL2A1 were significantly elevated following TF3 treatment.Conclusion: TF3 promotes fracture healing by promoting bone regeneration associated with the RUNX2 pathway and angiogenesis associated with the VEGFA pathway.

新型石墨烯基LED器件:从生长机理到器件特性

III族氮化物因具有禁带宽度大、击穿电压高、电子饱和漂移速度大、稳定性高等优异特性而广泛应用在发光二极管(LED)、激光器以及高频器件中。目前III族氮化物薄膜通常是异质外延生长在蓝宝石衬底表面,但是由于蓝宝石与III族氮化物之间存在较大的晶格失配与热失配,使得外延生长的III族氮化物内部存在较大的应力与较高的位错密度,严重影响了器件性能;与此同时,蓝宝石衬底热导率差,限制了其在大功率器件方面的应用。近年来研究发现,石墨烯作为外延生长缓冲层,能够有效解决蓝宝石衬底与外延III族氮化物薄膜之间由于晶格失配和热失配导致的高应力与高位错密度等问题,进而获得了高品质薄膜,并提升了器件的性能。本文综述了石墨烯/蓝宝石衬底上III族氮化物生长与LED器件构筑的研究现状,着重介绍了本课题组提出的一种新型外延衬底—石墨烯/蓝宝石衬底的特点,阐明了III族氮化物在该新型衬底上的生长机理,总结了其对III族氮化物质量提升的作用,并对其发展前景进行了展望。

石墨烯玻璃透明薄膜加热特性

石墨烯玻璃透明薄膜不仅具有石墨烯的高导热率和高电导率特性,同时表现出优异的电热转化和宽光谱高透光率特性。本文基于常压化学气相沉积技术获得了玻璃基(高纯石英JGS1)多层石墨烯薄膜,并对其电学特性、透光率以及电加热特性进行了详细的实验研究。结果表明:对于面电阻值为1500Ω∙sq^(−1),透射率为74%的石墨烯玻璃,当施加40 V外加偏压后,石墨烯薄膜可达到185℃的饱和温度,薄膜最高饱和温度达到325℃,加热速率超过18℃∙s^(−1)。与PET(Polyethylene terephthalate)基和硅基转移的石墨烯薄膜相比,直接生长石墨烯玻璃透明薄膜加热能力提高了195%,获得了更高的饱和温度、更短的热响应时间和更快的加热速率,并表现出优异的可重复性和长期稳定性,表明石墨烯玻璃在透明电加热领域中具有更加广阔的应用前景。

Direct low-temperature synthesis of graphene on various glasses by plasma-enhanced chemical vapor deposition for versatile, cost-effective electrodes

Catalyst-free and scalable synthesis of graphene on various glass substrates at low temperatures is of paramount significance to numerous applications such as low-cost transparent electronics and state-of-the-art displays. However, systematic study within this promising research field has remained scarce thus far. Herein, we report the direct growth of graphene on various glasses using a low-temperature plasma-enhanced chemical vapor deposition method. Such a facile and scalable approach guarantees the growth of uniform, transfer-free graphene films on various glass substrates at a growth temperature range of 400-600 ℃. The morphological, surface wetting, optical, and electrical properties of the obtained graphene can be tailored by controlling the growth parameters. Our uniform and high-quality graphene films directly integrated with low-cost, commonly used glasses show great potential in the fabrication of multi-functional electrodes for versatile applications in solar cells, transparent electronics, and smart windows.

Fast and uniform growth of graphene glass using confined-flow chemical vapor deposition and its unique applications

Fast and uniform growth of high-quality graphene on conventional glass is of great importance for practical applications of graphene glass. We report herein a confined-flow chemical vapor deposition （CVD） approach for the high- efficiency fabrication of graphene glass. The key feature of our approach is the fabrication of a 2-4 μm wide gap above the glass substrate, with plenty of stumbling blocks; this gap was found to significantly increase the collision probability of the carbon precursors and reactive fragments between one another and with the glass surface. As a result, the growth rate of graphene glass increased remarkably, together with an improvement in the growth quality and uniformity as compared to those in the conventional gas flow CVD technique. These high-quality graphene glasses exhibited an excellent defogging performance with much higher defogging speed and higher stability compared to those previously reported. The graphene sapphire glass was found to be an ideal substrate for growing uniform and ultra-smooth aluminum nitride thin films without the tedious pre-deposition of a buffer layer. The presented confined- flow CVD approach offers a simple and low-cost route for the mass production of graphene glass, which is believed to promote the practical applications of various graphene glasses.

6-inch uniform vertically-oriented graphene on soda-lime glass for photothermal applications

Vertically-oriented graphene （VG） has many advantages over flat lying graphene, including a large surface area, exposed sharp edges, and non-stacking three-dimensional geometry. Recently, VG nanosheets assembled on specific substrates have been used for applications in supersensitive gas sensors and high-performance energy storage devices. However, to realize these intriguing applications, the direct growth of high-quality VG on a functional substrate is highly desired. Herein, we report the direct synthesis of VG nanosheets on traditional soda-lime glass due to its low-cost, good transparency, and compatibility with many applications encountered in daily life. This synthesis was achieved by a direct-current plasma enhanced chemical vapor deposition （dc-PECVD） route at 580℃, which is right below the softening point of the glass, and featured a scale-up size - 6 inches. Particularly, the fabricated VG nanosheets/glass hybrid materials at a transmittance range of 97%-34% exhibited excellent solarthermal performances, reflected by a 70%-130% increase in the surface temperature under simulated sunlight irradiation. We believe that this graphene glass hybrid material has great potential for use in future transparent ＂green-warmth＂ construction materials.

Oxygen-assisted direct growth of large-domain and high-quality graphene on glass targeting advanced optical filter applications

Growing high quality graphene films directly on glass by chemical vapor deposition(CVD)meets a growing demand for constructing high-performance electronic and optoelectronic devices.However,the graphene synthesized by prevailing methodologies is normally of polycrystalline nature with high nucleation density and limited domain size,which significantly handicaps its overall properties and device performances.Herein,we report an oxygen-assisted CVD strategy to allow the direct synthesis of 6-inch-scale graphene glass harvesting markedly increased graphene domain size(from 0.2 to 1.8μm).Significantly,as-produced graphene glass attains record high electrical conductivity(realizing a sheet resistance of 900Ω·sq^(-1)at a visible-light transmittance of 92%)amongst the state-of-the-art counterparts,readily serving as transparent electrodes for fabricating high-performance optical filter devices.This work might open a new avenue for the scalable production and application of emerging graphene glass materials with high quality and low cost.

Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

The energy-efficient deep ultraviolet(DUV)optoelectronic devices suffer from critical issues associated with the poor quality and large strain of nitride material system caused by the inherent mismatch of heteroepitaxy.In this work,we have prepared the strain-free AlN film with low dislocation density(DD)by graphene(Gr)-driving strain-pre-store engineering and a unique mechanism of strain-relaxation in quasi-van der Waals(QvdW)epitaxy is presented.The DD in AlN epilayer with Gr exhibits an anomalous sawtooth-like evolution during the whole epitaxy process.Gr can help to enable the annihilation of the dislocations originated from the interface between AlN and Gr/sapphire by impelling a lateral two-dimensional growth mode.Remarkably,it can induce AlN epilayer to pre-store sufficient tensile strain during the early growth stage and thus compensate the compressive strain caused by hetero-mismatch.Therefore,the low-strain state of the DUV light-emitting diode(DUV-LED)epitaxial structure is realized on the strain-free AlN template with Gr.Furthermore,the DUV-LED with Gr demonstrate 2.1 times enhancement of light output power and a better stability of luminous wavelength compared to that on bare sapphire.An in-depth understanding of this work reveals diverse beneficial impacts of Gr on nitride growth and provides a novel strategy of relaxing the vital requirements of hetero-mismatch in conventional heteroepitaxy.

Bioinspired synthesis of CVD graphene flakes and graphene-supported molybdenum sulfide catalysts for hydrogen evolution reaction

Chemical vapor deposition has been the most-promising approach for growing large-area high-quality graphene films on planar substrates. Beyond the lateral growth, the synthesis of three-dimensional （3D） graphene has also been demon- strated recently on metal foams and insulating nanoparticles for exploring their applications in electrochemical electrodes. However, the existing approaches need either to prefabricate abundant starting substrates, or to construct porous frameworks for graphene growth. Herein, we report a straightforward, bioinspired strategy for growing large-quantity graphene flakes on cuttlebone substrates using the chemical vapor deposition （CVD） method. The separated graphene flakes from growth substrates are highly crystalline and layer-thickness controllable, outperforming the traditional chemically exfoliated graphene with few surface groups. Due to their inheriting the biomineral-derived morphology, the 3D graphene microstructures show a highly exposed and curved surface, which can load more MoSx（x ≥ 2） catalysts than other planar supports for highly efficient hydrogen generation. Briefly, the bioinspired approach is expected to achieve a reasonable balance between quality and quantity for graphene production, thus propelling its wide applications in energy storage and conversion devices.

Growth of 12-inch uniform monolayer graphene film on molten glass and its application in PbI2-based photodetector

Direct growth of large area uniform graphene on functional insulating materials is essential for engineering versatile applications of graphene. However, the existing synthesis approaches can hardly avoid the generation of non-uniform multilayer graphene along the gas flow direction, affording huge challenges for further scaling up. Herein, by exploiting the molten state of soda-lime glass, we have accomplished the direct growth of large area uniform (up to 30 cm × 6 cm) graphene via a facile chemical vapor deposition route on low cost soda-lime glass. The use of molten glass eliminates the chemically active sites (surface corrugations, scratches, defects), and improves the mobility of carbon precursors, affording uniform nucleation and growth of monolayer graphene. Intriguingly, thus-obtained graphene acts as an ideal coating layer for the surface crystallographic modification of soda-lime glass, making it epitaxy substrates for synthesizing high-quality PbI2 nanoplates and continues films. Accordingly, a prototype photodetector was fabricated to present excellent photoelectrical properties of high responsivity (~ 600 on/off current ratio) and fast response speed (18 μs). This work hereby paves ways for the batch production and the direct applications of graphene glass as platforms for constructing high performance electronic and optoelectronic devices.

CO_(2)-promoted transfer-free growth of conformal graphene

Gaseous promotors have readily been adopted during the direct synthesis of graphene over insulators to enhance the growth quality and/or boost the growth rate.The understanding of the real functions of carbon-containing promotors has still remained elusive.In this study,we identify the critical roles of a representative CO_(2)promotor played in the direct growth of graphene.The comparative experimental trials validate CO_(2)as an effective modulator to decrease graphene nucleation density,improve growth kinetics,mitigate adlayer formation.The first-principles calculations illustrate that the generation of gas-phase OH species in CO_(2)-assisted system helps decrease the energy barriers of CH4 decomposition and carbon attachment to the growth front,which might be the key factor to allow high-quality direct growth.Such a CO_(2)-promoted strategy enables the conformal coating of graphene film over curved insulators,where the sheet resistance of grown graphene on quartz reaches as low as 1.26 kΩ·sq^(−1)at an optical transmittance of~95.8%.The fabricated endoscope lens based on our conformal graphene harvests an apoptosis of 82.8%for noninvasive thermal therapy.The work presented here is expected to motivate further investigations in the controllable growth of high-quality graphene on insulating substrates.

Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review

Heteroepitaxy can reduce the cost and widen the application range of semiconductor film synthesis and device fabrication.However,the lattice and thermal expansion coefficient mismatches between epilayers and substrates limit the improvement of crystal quality and device performance.Two-dimensional(2D)material-assisted heteroepitaxy offers an effective solution to these challenges.The weak interaction at the interface between films and substrates facilitates the subsequent exfoliation and transfer of epilayer for the fabrication of flexible or high-power electronics.Herein,we summarize the modes of 2D material-assisted epitaxy,which can be classified into remote epitaxy,pinhole epitaxy and van der Waals epitaxy based on the interfacial interaction between the epilayers and substrates.Furthermore,we discuss in detail the improved crystal quality and functional applications,such as flexible devices,wavelength-modulated optoelectronic devices,and thermal management in high-power devices.Moreover,we highlight the challenges and prospects of 2D material-assisted epitaxy,providing roadmaps for lateral research and semiconductor production.