The performance of a piecewise-stressed ZnO piezoelectric semiconductor nano?ber is studied with the multi-?eld coupling theory. The ?elds produced by equal and opposite forces as well as sinusoidally distributed forc...The performance of a piecewise-stressed ZnO piezoelectric semiconductor nano?ber is studied with the multi-?eld coupling theory. The ?elds produced by equal and opposite forces as well as sinusoidally distributed forces are examined. Speci?c distributions of potential barriers, wells, and regions with effective polarization charges are found. The results are fundamental for the mechanical tuning on piezoelectric semiconductor devices and piezotronics.展开更多
The electric band energy variation in a bent piezoelectric semiconductor(PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanic...The electric band energy variation in a bent piezoelectric semiconductor(PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band Hamiltonian.By considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss’ s law. Numerical examples are carried out for an n-type Zn O nanowire in different locations induced by an applied concentrated end force. They include the electric potential, heavy hole(HH), light hole(LH), spin-orbit split-off(SO),and conduction band(CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover,at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics.展开更多
Recent success in strain engineering has triggered tremendous interest in its study and potential applications in nanodevice design. In this paper, we establish a coupled piezoelectric/semiconducting model for a wurtz...Recent success in strain engineering has triggered tremendous interest in its study and potential applications in nanodevice design. In this paper, we establish a coupled piezoelectric/semiconducting model for a wurtzite structure ZnO nanofiber under the local mechanical loading. The energy band structure tuned by the local mechanical loading and local length is calculated via an eight-band k·p method, which includes the coupling of valance and conduction bands. Poisson's effect on the distribution of electric potential inversely depends on the local mechanical loading. Numerical results reveal that both the applied local mechanical loading and the local length exhibit obvious tuning effects on the electric potential and energy band. The band gap at band edges varies linearly with the applied loading. Changing the local length shifts the energy band which is far away from the band edges. This study will be useful in the electronic and optical enhancement of semiconductor devices.展开更多
This paper studies the equilibrium structure parameters and the dependences of the elastic properties on pressure for rutile TiO2 by using the Cambridge Serial Total Energy Package （CASTEP） program in the frame of d...This paper studies the equilibrium structure parameters and the dependences of the elastic properties on pressure for rutile TiO2 by using the Cambridge Serial Total Energy Package （CASTEP） program in the frame of density functional theory. The obtained equilibrium structure parameters, bulk modulus B0 and its pressure derivative B′0 are in good agreement with experiments and the theoretical results. The six independent elastic constants of rutile TiO2 under pressure are theoretically investigated for the first time. It is found that, as pressure increases, the elastic constants C11, C33, C66, C12 and C13 increase, The variation of elastic constant C44 is not obvious and the anisotropy will weaken.展开更多
We study the bending of a two-layer piezoelectric semiconductor plate(bimorph).The macroscopic theory of piezoelectric semiconductors is employed.A set of two-dimensional plate equations is derived from the three-dime...We study the bending of a two-layer piezoelectric semiconductor plate(bimorph).The macroscopic theory of piezoelectric semiconductors is employed.A set of two-dimensional plate equations is derived from the three-dimensional equations.The plate equations exhibit direct couplings among bending,electric polarization along the plate thickness,and mobile charges.In the case of pure bending,a combination of physical and geometric parameters is identified which characterizes the strength of the interaction between the mechanical load and the distribution of mobile charges.In the bending of a rectangular plate under a distributed transverse mechanical load,it is shown that mobile charge distributions and potential barriers/wells develop in the plate.When the mechanical load is local and self-balanced,the induced carrier distributions and potential barriers/wells are also localized near the loading area.The results are fundamentally useful for mechanically manipulating mobile charges in piezoelectric semiconductor devices.展开更多
In this paper,we propose a specific two-layer model consisting of a functionally graded(FG)layer and a piezoelectric semiconductor(PS)layer.Based on the macroscopic theory of PS materials,the effects brought about by ...In this paper,we propose a specific two-layer model consisting of a functionally graded(FG)layer and a piezoelectric semiconductor(PS)layer.Based on the macroscopic theory of PS materials,the effects brought about by the attached FG layer on the piezotronic behaviors of homogeneous n-type PS fibers and PN junctions are investigated.The semi-analytical solutions of the electromechanical fields are obtained by expanding the displacement and carrier concentration variation into power series.Results show that the antisymmetry of the potential and electron concentration distributions in homogeneous n-type PS fibers is destroyed due to the material inhomogeneity of the attached FG layer.In addition,by creating jump discontinuities in the material properties of the FG layer,potential barriers/wells can be produced in the middle of the fiber.Similarly,the potential barrier configuration near the interface of a homogeneous PS PN junction can also be manipulated in this way,which offers a new choice for the design of PN junction based devices.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.11672113 and 51435006)the Key Laboratory Project of Hubei Province of China(No.2016CFA073)
文摘The performance of a piecewise-stressed ZnO piezoelectric semiconductor nano?ber is studied with the multi-?eld coupling theory. The ?elds produced by equal and opposite forces as well as sinusoidally distributed forces are examined. Speci?c distributions of potential barriers, wells, and regions with effective polarization charges are found. The results are fundamental for the mechanical tuning on piezoelectric semiconductor devices and piezotronics.
基金Project supported by the National Natural Science Foundation of China(Nos.11972164,11672113,11472182)the Key Laboratory Project of Hubei Province of China(No.2016CFA073)。
文摘The electric band energy variation in a bent piezoelectric semiconductor(PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band Hamiltonian.By considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss’ s law. Numerical examples are carried out for an n-type Zn O nanowire in different locations induced by an applied concentrated end force. They include the electric potential, heavy hole(HH), light hole(LH), spin-orbit split-off(SO),and conduction band(CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover,at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics.
基金Project supported by the National Natural Science Foundation of China (No. 11802098)the Chinese Postdoctoral Science Foundation (No. 2019M662589)the Natural Science Foundation of Hubei Province of China (No. 2018CFB111)。
文摘Recent success in strain engineering has triggered tremendous interest in its study and potential applications in nanodevice design. In this paper, we establish a coupled piezoelectric/semiconducting model for a wurtzite structure ZnO nanofiber under the local mechanical loading. The energy band structure tuned by the local mechanical loading and local length is calculated via an eight-band k·p method, which includes the coupling of valance and conduction bands. Poisson's effect on the distribution of electric potential inversely depends on the local mechanical loading. Numerical results reveal that both the applied local mechanical loading and the local length exhibit obvious tuning effects on the electric potential and energy band. The band gap at band edges varies linearly with the applied loading. Changing the local length shifts the energy band which is far away from the band edges. This study will be useful in the electronic and optical enhancement of semiconductor devices.
基金Project supported by the National Natural Science Foundation of China (Grant No 10576020)the NSAF (Grant No 10776022)
文摘This paper studies the equilibrium structure parameters and the dependences of the elastic properties on pressure for rutile TiO2 by using the Cambridge Serial Total Energy Package （CASTEP） program in the frame of density functional theory. The obtained equilibrium structure parameters, bulk modulus B0 and its pressure derivative B′0 are in good agreement with experiments and the theoretical results. The six independent elastic constants of rutile TiO2 under pressure are theoretically investigated for the first time. It is found that, as pressure increases, the elastic constants C11, C33, C66, C12 and C13 increase, The variation of elastic constant C44 is not obvious and the anisotropy will weaken.
基金Project supported by the National Natural Science Foundation of China(Nos.12072167 and 11972199)the Natural Science Foundation of Zhejiang Province of China(Nos.LZ22A020001 and LGG19A020001)。
文摘We study the bending of a two-layer piezoelectric semiconductor plate(bimorph).The macroscopic theory of piezoelectric semiconductors is employed.A set of two-dimensional plate equations is derived from the three-dimensional equations.The plate equations exhibit direct couplings among bending,electric polarization along the plate thickness,and mobile charges.In the case of pure bending,a combination of physical and geometric parameters is identified which characterizes the strength of the interaction between the mechanical load and the distribution of mobile charges.In the bending of a rectangular plate under a distributed transverse mechanical load,it is shown that mobile charge distributions and potential barriers/wells develop in the plate.When the mechanical load is local and self-balanced,the induced carrier distributions and potential barriers/wells are also localized near the loading area.The results are fundamentally useful for mechanically manipulating mobile charges in piezoelectric semiconductor devices.
基金supported by the National Natural Science Foundation of China(Nos.12061131013,11972276,1211101401,12172171,and 12102183)the State Key Laboratory of Mechanics and Control of Mechanical Structures of Nanjing University of Aeronautics and Astronautics(No.MCMS-E-0520K02)+5 种基金the Fundamental Research Funds for the Central Universities of China(Nos.NE2020002 and NS2019007)the National Natural Science Foundation of China for Creative Research Groups(No.51921003)the Postgraduate Research&Practice Innovation Program of Jiangsu Province of China(No.KYCX210179)the National Natural Science Foundation of Jiangsu Province of China(No.BK20211176)the Local Science and Technology Development Fund Projects Guided by the Central Government of China(No.2021Szvup061)the Jiangsu High-Level Innovative and Entrepreneurial Talents Introduction Plan(Shuangchuang Doctor Program,No.JSSCBS20210166)。
文摘In this paper,we propose a specific two-layer model consisting of a functionally graded(FG)layer and a piezoelectric semiconductor(PS)layer.Based on the macroscopic theory of PS materials,the effects brought about by the attached FG layer on the piezotronic behaviors of homogeneous n-type PS fibers and PN junctions are investigated.The semi-analytical solutions of the electromechanical fields are obtained by expanding the displacement and carrier concentration variation into power series.Results show that the antisymmetry of the potential and electron concentration distributions in homogeneous n-type PS fibers is destroyed due to the material inhomogeneity of the attached FG layer.In addition,by creating jump discontinuities in the material properties of the FG layer,potential barriers/wells can be produced in the middle of the fiber.Similarly,the potential barrier configuration near the interface of a homogeneous PS PN junction can also be manipulated in this way,which offers a new choice for the design of PN junction based devices.
