Optical reflection anisotropy microscopy mappings of micropipe defects on the surface of a 4H-SiC single crystal are studied by the scanning anisotropy microscopy(SAM)system.The reflection anisotropy(RA)image with a&#...Optical reflection anisotropy microscopy mappings of micropipe defects on the surface of a 4H-SiC single crystal are studied by the scanning anisotropy microscopy(SAM)system.The reflection anisotropy(RA)image with a'butterfly pattern'is obtained around the micropipes by SAM.The RA image of the edge dislocations is theoretically simulated based on dislocation theory and the photoelastic principle.By comparing with the Raman spectrum,it is verified that the micropipes consist of edge dislocations.The different patterns of the RA images are due to the different orientations of the Burgers vectors.Besides,the strain distribution of the micropipes is also deduced.One can identify the dislocation type,the direction of the Burgers vector and the optical anisotropy from the RA image by using SAM.Therefore,SAM is an ideal tool to measure the optical anisotropy induced by the strain field around a defect.展开更多
Ga N具有禁带宽、热导率高、电子饱和漂移速度大和介电常数小等特点 ,在高亮度发光二极管、短波长激光二极管、高性能紫外探测器和高温、高频、大功率半导体器件等领域有着广泛的应用前景。本文介绍了 Ga N基半导体材料的制备方法 ,异...Ga N具有禁带宽、热导率高、电子饱和漂移速度大和介电常数小等特点 ,在高亮度发光二极管、短波长激光二极管、高性能紫外探测器和高温、高频、大功率半导体器件等领域有着广泛的应用前景。本文介绍了 Ga N基半导体材料的制备方法 ,异质结构以及在光电子和微电子器件领域的应用 。展开更多
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2018YFE0204001,2018YFA0209103,2016YFB0400101,and 2016YFB0402303)the National Natural Science Foundation of China(Grant Nos.61627822,61704121,61991430,and 62074036)Postdoctoral Research Program of Jiangsu Province(Grant No.2021K599C).
文摘Optical reflection anisotropy microscopy mappings of micropipe defects on the surface of a 4H-SiC single crystal are studied by the scanning anisotropy microscopy(SAM)system.The reflection anisotropy(RA)image with a'butterfly pattern'is obtained around the micropipes by SAM.The RA image of the edge dislocations is theoretically simulated based on dislocation theory and the photoelastic principle.By comparing with the Raman spectrum,it is verified that the micropipes consist of edge dislocations.The different patterns of the RA images are due to the different orientations of the Burgers vectors.Besides,the strain distribution of the micropipes is also deduced.One can identify the dislocation type,the direction of the Burgers vector and the optical anisotropy from the RA image by using SAM.Therefore,SAM is an ideal tool to measure the optical anisotropy induced by the strain field around a defect.
