It is well known that -nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization elect...It is well known that -nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization electric field, we design an N-face AlGaN solar-blind avalanche photodiode (APD) with an Al<sub>0.45</sub>Ga<sub>0.55</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N heterostructure as separate absorption and multiplication (SAM) regions. The simulation results show that the N-face APDs are more beneficial to improving the avalanche gain and reducing the avalanche breakdown voltage compared with the Ga-face APDs due to the effect of the polarization electric field. Furthermore, the Al<sub>0.45</sub>Ga<sub>0.55</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N heterostructure SAM regions used in APDs instead of homogeneous Al<sub>0.45</sub>Ga<sub>0.55</sub>N SAM structure can increase significantly avalanche gain because of the increased hole ionization coefficient by using the relatively low Al-content AlGaN in the multiplication region. Meanwhile, a quarter-wave AlGaN/AlN distributed Bragg reflector structure at the bottom of the device is designed to remain a solar-blind characteristic of the heterostructure SAM-APDs.展开更多
基金Supported by the State Key Project of Research and Development Plan of China under Grant No 2016YFB0400903the National Natural Science Foundation of China under Grant Nos 61634002,61274075 and 61474060+2 种基金the Key Project of Jiangsu Province under Grant No BE2016174the Anhui University Natural Science Research Project under Grant No KJ2015A153the Open Fund of State KeyLab of Optical Technologies on Nano-fabrication and Micro-engineering
文摘It is well known that -nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization electric field, we design an N-face AlGaN solar-blind avalanche photodiode (APD) with an Al<sub>0.45</sub>Ga<sub>0.55</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N heterostructure as separate absorption and multiplication (SAM) regions. The simulation results show that the N-face APDs are more beneficial to improving the avalanche gain and reducing the avalanche breakdown voltage compared with the Ga-face APDs due to the effect of the polarization electric field. Furthermore, the Al<sub>0.45</sub>Ga<sub>0.55</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N heterostructure SAM regions used in APDs instead of homogeneous Al<sub>0.45</sub>Ga<sub>0.55</sub>N SAM structure can increase significantly avalanche gain because of the increased hole ionization coefficient by using the relatively low Al-content AlGaN in the multiplication region. Meanwhile, a quarter-wave AlGaN/AlN distributed Bragg reflector structure at the bottom of the device is designed to remain a solar-blind characteristic of the heterostructure SAM-APDs.
