半导体乙醇传感器的湿度影响与氧化铌的应用

详细考察了湿度对SnO2系半导体乙醇传感器的影响，实验表明：环境湿度会使三价金属氧化物掺杂的SnO2半导体材料灵敏度下降，其中以氧化镧掺杂的SnO2系乙醇传感器衰减严重，在相对湿度90％RH（25℃）的环境中3×10^-4体积分数的乙醇信号衰减率达到30％～40％，这种现象同样存在与In2O3和Al2O3掺杂体系的传感器上。以Nb2O5为掺杂剂的传感器体系湿度引起的灵敏度衰减轻微，用1．5％Nb2O5和0．5％La2O3配合使用的掺杂剂湿度影响较小，同时，传感器对乙醇灵敏度和选择性较好。

Structure and Dielectric Properties of ZnO and Nb_2O_5 Doped BaO-TiO_2 System Microwave Ceramics

The microwave dielectric properties and microstructure of BaTi4.3ZnyO9.6＋y ＋0.02 mol% SnO2＋0.01 mol% MnCO3＋x mol% Nb2O5（x=0-0.05, y=0-0.08） system ceramics were studied as a function of the amount of ZnO and Nb2O5 doped. Addition of （y=0-0.05） ZnO and （x=0-0.025） Nb2O5 enhanced the reactivity and decreased the sintering temperature effectively. It also increased the dielectric constant ε r and quality factor Q（=1/tan 8） of the system due to the substitution of Ti^4＋ ions with incorporating Zn^2＋and Nb^5＋ ions, which was analyzed by the reaction ZnO＋Nb2O5＋ 3 TiTxTi →ZnTi＋ 2NbTi＋3TiO2. When the system doped with （y=0.05） ZnO and （x=0.025） Nb205 were sintered at 1 160 ℃ for 6 h, the εr. Qf0 value and rfwere 36.5, 42 000 GHz, and＋1.8 ppm/℃, respectively, at 5 GHz.

Radiation resistance property of barium gallo-germanate glass doped by Nb_(2)O_(5)

Effects of Nb_(2)O_(5)dopant on the radiation response of barium gallo-germanate(BGG)glass are studied mainly by electron paramagnetic resonance and absorption spectroscopy.Owing to the Nb^(5+)$Nb^(3+)interconversion in doped samples,formations of Ge-related non-bridging oxygen hole center and Ge-related electron center defects after g-ray irradiation are inhibited.Thereby,Nb_(2)O_(5)dopant can enhance radiation resistance of BGG glass,and 1.0%Nb2O5 concentration is the best.

Nb和Ta掺杂四方YSZ机械性能及热性能的第一性原理研究

采用从头算平面波赝势方法结合电子交换关联能的广义梯度近似理论,对四方YSZ、Nb2O5掺杂YSZ(简写为Nb YSZ)、Ta2O5掺杂YSZ(简写为Ta YSZ)的晶体结构进行几何优化,得到体系的最稳定结构。然后利用胡克定律计算了四方YSZ、Nb YSZ、Ta YSZ的弹性常数,根据弹性常数分别获得了这三种结构的体模量、剪切模量、杨氏模量、声速、德拜温度和理论最低热导率等参数。研究结果表明:Nb2O5和Ta2O5掺杂均能降低YSZ的杨氏模量和理论最小热导率。从理论上证实Nb2O5和Ta2O5均是YSZ良好的掺杂剂,Ta2O5的效果好于Nb2O5。