With diethylamine as a solvent, ZnSe films were formed on the Si substrate directly from zinc and selenium through the modified solvothermal method. The effects of holding temperature, deposition time and substrate su...With diethylamine as a solvent, ZnSe films were formed on the Si substrate directly from zinc and selenium through the modified solvothermal method. The effects of holding temperature, deposition time and substrate surface treatment on the quality and morphologies of the ZnSe films were investigated. The growth mechanism of ZnSe films was proved to be a layer-nucleation growth process, which was tied in with the Stranski-Krastanov （SK） model. ZnSe films were identified by the X-ray diffraction pattern （XRD）, the scanning electron microscope （SEM）, the X-ray photoelectron spectroscope （XPS） and the photoluminescence （PL） techniques. The results indicate that the modified solvothermal method with diethylamine as a solvent is suitable to prepare high quality ZnSe films.展开更多
The crystal structure, electrical and optical properties of ZnSe thin films deposited on an In203 ：Sn （ITO） substrate are evaluated for their suitability as the window layer of CdTe thin film solar cells. ZnSe thin...The crystal structure, electrical and optical properties of ZnSe thin films deposited on an In203 ：Sn （ITO） substrate are evaluated for their suitability as the window layer of CdTe thin film solar cells. ZnSe thin films of 80, 90, and 100 nm thickness were deposited by a physical vapor deposition method on Indium tin oxide coated glass substrates. The lattice parameters are increased to 5.834 A when the film thickness was 100 rim, which is close to that of CdS. The crystallite size is decreased with the increase of film thickness. The optical transmission analysis shows that the energy gap for the sample with the highest thickness has also increased and is very close to 2.7 eV. The photo decay is also studied as a function of ZnSe film thickness.展开更多
基金National Natural Science Foundation of China (50502028, 50336040)The Outstanding Youth Foundation of North-western Polytechnical University
文摘With diethylamine as a solvent, ZnSe films were formed on the Si substrate directly from zinc and selenium through the modified solvothermal method. The effects of holding temperature, deposition time and substrate surface treatment on the quality and morphologies of the ZnSe films were investigated. The growth mechanism of ZnSe films was proved to be a layer-nucleation growth process, which was tied in with the Stranski-Krastanov （SK） model. ZnSe films were identified by the X-ray diffraction pattern （XRD）, the scanning electron microscope （SEM）, the X-ray photoelectron spectroscope （XPS） and the photoluminescence （PL） techniques. The results indicate that the modified solvothermal method with diethylamine as a solvent is suitable to prepare high quality ZnSe films.
文摘The crystal structure, electrical and optical properties of ZnSe thin films deposited on an In203 ：Sn （ITO） substrate are evaluated for their suitability as the window layer of CdTe thin film solar cells. ZnSe thin films of 80, 90, and 100 nm thickness were deposited by a physical vapor deposition method on Indium tin oxide coated glass substrates. The lattice parameters are increased to 5.834 A when the film thickness was 100 rim, which is close to that of CdS. The crystallite size is decreased with the increase of film thickness. The optical transmission analysis shows that the energy gap for the sample with the highest thickness has also increased and is very close to 2.7 eV. The photo decay is also studied as a function of ZnSe film thickness.
