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Criteria for versatile GaN MOVPE tool:high growth rate GaN by atmospheric pressure growth
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作者 Koh Matsumoto Kazutada Ikenaga +11 位作者 Jun Yamamoto Kazuki Naito Yoshiki Yano Akinori Ubukata Hiroki Tokunaga Tadanobu Arimura Katsuaki Cho Toshiya Tabuchi Akira Yamaguchi Yasuhiro Harada Yuzaburo Ban Kousuke Uchiyama 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第1期21-23,共3页
Growth rate has a direct impact on the productivity of nitride LED production. Atmospheric pressure growth of GaN with a growth rate as high as 10/zm/h and also Alo.lGao.gN growth of 1μm/h by using 4 inch by 11 produ... Growth rate has a direct impact on the productivity of nitride LED production. Atmospheric pressure growth of GaN with a growth rate as high as 10/zm/h and also Alo.lGao.gN growth of 1μm/h by using 4 inch by 11 production scale MOVPE are described. XRD of (002) and (102) direction was 200 arcsec and 250 arcsec, respectively. Impact of the growth rate on productivity is discussed. 展开更多
关键词 MOVPE GaN: AlGaN atmospheric pressure growth high growth rate
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One-step synthesis of basic magnesium sulfate whiskers by atmospheric pressure reflux 被引量:8
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作者 Xinlong Ma Guoqing Ning +1 位作者 Chuanlei Qi Jinsen Gao 《Particuology》 SCIE EI CAS CSCD 2016年第1期191-196,共6页
We have developed a one-step process for the synthesis of basic magnesium sulfate (5Mg(OH)2-MgSO4-3H20, abbreviated as 513MOS) whiskers from MgSO4,7H20 and MgO by refluxing at atmospheric pressure. The process sho... We have developed a one-step process for the synthesis of basic magnesium sulfate (5Mg(OH)2-MgSO4-3H20, abbreviated as 513MOS) whiskers from MgSO4,7H20 and MgO by refluxing at atmospheric pressure. The process shows potential for the low-cost mass production of controlled- structure whiskers. Their 0.3-1.0 μm diameter and 40-80 μm length correspond to an aspect ratio of 40-260. The 513MOS whisker morphology is related closely to MgSO4 concentration and reflux time. The optimized MgSO4 concentration is 1.2-1.5 mol/L with a 25-30 h reflux time. X-ray diffractometry revealed that the b-axis is the predominant growth direction of the whiskers. Their growth mechanism is by the relatively slow liquid-phase deposition of Mg2+, OH-, and SO42-. The long reaction time and high MgSO4 concentration are conducive to the formation of 513MOS whiskers under gentle reaction conditions. Porous MgO whiskers with a fibrous structure were obtained after calcination of the 513MOS whiskers at 1020 ℃. 展开更多
关键词 Basic magnesium sulfate Whiskers atmospheric pressure reflux growth mechanism
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