High performance wide bandgap perovskite solar cell with low V_(OC) deficit less than 0.4 V

Wide bandgap perovskite solar cells(PSCs)have attracted significant attention because they can be applied to the top cells of tandem solar cells.However,high open-circuit voltage(V_(OC))deficit(>0.4 V)result from poor crystallization and high non-radiative recombination losses become a serious limitation in the pursuit of high performance.Here,the relevance between different Pbl_(2)proportions and performance parameters are revealed through analysis of surface morphology,residual stress,and photostability.The increase of Pbl_(2)proportion promotes crystal growth and reduces the work function of the perovskite film surface and promotes the energy level alignment with the carrier transport layer,which decreased the V_(OC)deficit.However,residual PbI_(2)exacerbated the stress level of perovskite film,and the resulting lattice disorder deteriorated the photostability of the device.Ultimately,after the synergistic passivation of residual PbI_(2)and PEAI,the V_(OC)achieves 1.266 V and V_(OC)deficit is less than 0.4 V,the record value in wide bandgap PSCs.

Low-frequency bandgap and vibration suppression mechanism of a novel square hierarchical honeycomb metamaterial

The suppression of low-frequency vibration and noise has always been an important issue in a wide range of engineering applications.To address this concern,a novel square hierarchical honeycomb metamaterial capable of reducing low-frequency noise has been developed.By combining Bloch’s theorem with the finite element method,the band structure is calculated.Numerical results indicate that this metamaterial can produce multiple low-frequency bandgaps within 500 Hz,with a bandgap ratio exceeding 50%.The first bandgap spans from 169.57 Hz to 216.42 Hz.To reveal the formation mechanism of the bandgap,a vibrational mode analysis is performed.Numerical analysis demonstrates that the bandgap is attributed to the suppression of elastic wave propagation by the vibrations of the structure’s two protruding corners and overall expansion vibrations.Additionally,detailed parametric analyses are conducted to investigate the effect ofθ,i.e.,the angle between the protruding corner of the structure and the horizontal direction,on the band structures and the total effective bandgap width.It is found that reducingθis conducive to obtaining lower frequency bandgaps.The propagation characteristics of elastic waves in the structure are explored by the group velocity,phase velocity,and wave propagation direction.Finally,the transmission characteristics of a finite periodic structure are investigated experimentally.The results indicate significant acceleration amplitude attenuation within the bandgap range,confirming the structure’s excellent low-frequency vibration suppression capability.

Surface-functionalized hole-selective monolayer for high efficiency single-junction wide-bandgap and monolithic tandem perovskite solar cells

Carbazole moiety-based 2PACz([2-(9H-carbazol-9-yl)ethyl]phosphonic acid)self-assembled monolayers(SAMs)are excellent hole-selective contact(HSC)materials with abilities to excel the charge-transferdynamics of perovskite solar cells(PSCs).Herein,we report a facile but powerful method to functionalize the surface of 2PACz-SAM,by which reproducible,highly stable,high-efficiency wide-bandgap PSCs can be obtained.The 2PACz surface treatment with various donor number solvents improves assembly of 2PACz-SAM and leave residual surface-bound solvent molecules on 2PACz-SAM,which increases perovskite grain size,retards halide segregation,and accelerates hole extraction.The surface functionalization achieves a high power conversion efficiency(PCE)of 17.62%for a single-junction wide-bandgap(~1.77 e V)PSC.We also demonstrate a monolithic all-perovskite tandem solar cell using surfaceengineered HSC,showing high PCE of 24.66%with large open-circuit voltage of 2.008 V and high fillfactor of 81.45%.Our results suggest this simple approach can further improve the tandem device,when coupled with a high-performance narrow-bandgap sub-cell.

Modeling and analysis of gradient metamaterials for broad fusion bandgaps

A gradient metamaterial with varying-stiffness local resonators is proposed to open the multiple bandgaps and further form a broad fusion bandgap.First,three local resonators with linearly increasing stiffness are periodically attached to the spring-mass chain to construct the gradient metamaterial.The dispersion relation is then derived based on Bloch's theorem to reveal the fusion bandgap theoretically.The dynamic characteristic of the finite spring-mass chain is investigated to validate the fusion of multiple bandgaps.Finally,the effects of the design parameters on multiple bandgaps are discussed.The results show that the metamaterial with a non-uniform stiffness gradient pattern is capable of opening a broad fusion bandgap and effectively attenuating the longitudinal waves within a broad frequency region.

Alkyl chain modulation of asymmetric hexacyclic fused acceptor synergistically with wide bandgap third component for high efficiency ternary organic solar cells

Herein,two asymmetric hexacyclic fused small molecule acceptors(SMAs),namely BP4F-HU and BP4F-UU,were synthesized.The elongated outside chains in the BP4F-UU molecule played a crucial role in optimizing the morphology of blend film,thereby improving charge mobility and reducing energy loss within the corresponding film.Notably,the PM6:BP4F-UU device exhibited a higher open-circuit voltage(V_(oc))of 0.878 V compared to the PM6:BP4F-HU device with a V_(oc)of 0.863 V.Further,a new wide bandgap SMA named BTP-TA was designed and synthesized as the third component to the PM6:BP4F-UU host binary devices,which showed an ideal complementary absorption spectrum in PM6:BP4F-UU system.In addition,BTP-TA can achieve efficient intermolecular energy transfer to BP4F-UU by fluorescence resonance energy transfer(FRET)pathway,due to the good overlap between the photoluminescence(PL)spectrum of BTP-TA and the absorption region of BP4F-UU.Consequently,ternary devices with 15wt%BTP-TA exhibits broader photon utilization,optimal blend morphology,and reduced charge recombination compared to the corresponding binary devices.Consequently,PM6:BP4F-UU:BTP-TA ternary device achieved an optimal power conversion efficiency(PCE)of 17.83%with simultaneously increased V_(oc)of 0.905 V,short-circuit current density(J_(sc))of 26.14 mA/cm^(2),and fill factor(FF)of 75.38%.

First-principles study of the bandgap renormalization and optical property ofβ-LiGaO_(2)

Theβ-LiGaO_(2)with an orthorhombic wurtzite-derived structure is a candidate ultrawide direct-bandgap semiconductor.In this work,using the non-adiabatic Allen-Heine-Cardona approach,we investigate the bandgap renormalization arising from electron-phonon coupling.We find a sizable zero-point motion correction of-0.362 eV to the gap atΓ,which is dominated by the contributions of long-wavelength longitudinal optical phonons.The bandgap ofβ-LiGaO_(2)decreases monotonically with increasing temperature.We investigate the optical spectra by comparing the model Bethe-Salpether equation method with the independent-particle approximation.The calculated optical spectra including electron-hole interactions exhibit strong excitonic effects,in qualitative agreement with the experiment.The contributing interband transitions and the binding energy for the excitonic states are analyzed.

Antimony Potassium Tartrate Stabilizes Wide-Bandgap Perovskites for Inverted 4-T All-Perovskite Tandem Solar Cells with Efficiencies over 26%

Wide-bandgap(WBG)perovskites have been attracting much attention because of their immense potential as a front light-absorber for tandem solar cells.However,WBG perovskite solar cells(PSCs)generally exhibit undesired large open-circuit voltage(VOC)loss due to light-induced phase segregation and severe non-radiative recombination loss.Herein,antimony potassium tartrate(APTA)is added to perovskite precursor as a multifunctional additive that not only coordinates with unbonded lead but also inhibits the migration of halogen in perovskite,which results in suppressed non-radiative recombination,inhibited phase segregation and better band energy alignment.Therefore,a APTA auxiliary WBG PSC with a champion photoelectric conversion efficiency of 20.35%and less hysteresis is presented.They maintain 80%of their initial efficiencies under 100 mW cm^(-2)white light illumination in nitrogen after 1,000 h.Furthermore,by combining a semi-transparent WBG perovskite front cell with a narrow-bandgap tin–lead PSC,a perovskite/perovskite four-terminal tandem solar cell with an efficiency over 26%is achieved.Our work provides a feasible approach for the fabrication of efficient tandem solar cells.

Effects of phonon bandgap on phonon-phonon scattering in ultrahigh thermal conductivityθ-phase TaN

Phonon bandgap typically has a significant effect on phonon-phonon scattering process.In this work,the effects of mass modified phonon bandgap inθ-phase Ta N are systemically investigated by the means of first-principles calculations with linearized Boltzmann transport equation.Through detailed calculations,we find that phonon bandgap has a significant effect on three-phonon process while exhibits a much weaker effect on four-phonon process.The reason for the ultrahigh thermal conductivity ofθ-phase Ta N is the long lifetime of phonons including both three-phonon and four-phonon processes,which originates from the weak phonon anharmonicity and large phonon bandgap-induced small phonon-phonon scattering phase space.This work advances the understanding of phonon bandgap effects on phonon transport.

Trimmable bandgap reference circuit with exponential curvature compensation

This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gainβof the bipolar junction transistor(BJT)and the temperature as well as reduce the influence of resistance-temperature dependency.Considering the degraded circuit performance caused by the process deviation,the trimmable module of the temperature coefficient(TC)is introduced to improve the circuit stability.The circuit has the advantages of simple structure,high linear stability,high TC accuracy,and trimmable TC.It consumes an area of 0.09 mm^(2)when fabricated by using the 0.25-μm complementary metal-oxide-semiconductor(CMOS)process.The proposed circuit achieves the simulated power supply rejection(PSR)of about-78.7 dB@1 kHz,the measured TC of~4.7 ppm/℃over a wide temperature range from-55℃to 125℃with the 2.5-V single-supply voltage,and the tested line regulation of 0.10 mV/V.Such a high-performance bandgap reference circuit can be widely applied in high-precision and high-reliability electronic systems.

The Advent of Wide Bandgap Green-Synthesized Copper Zinc Tin Sulfide Nanoparticles for Applications in Optical and Electronic Devices

Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.

Flexural wave bandgap properties of phononic crystal beams with interval parameters

Uncertainties are unavoidable in practical engineering,and phononic crystals are no exception.In this paper,the uncertainties are treated as the interval parameters,and an interval phononic crystal beam model is established.A perturbation-based interval finite element method(P-IFEM)and an affine-based interval finite element method(A-IFEM)are proposed to study the dynamic response of this interval phononic crystal beam,based on which an interval vibration transmission analysis can be easily implemented and the safe bandgap can be defined.Finally,two numerical examples are investigated to demonstrate the effectiveness and accuracy of the P-IFEM and A-IFEM.Results show that the safe bandgap range may even decrease by 10%compared with the deterministic bandgap without considering the uncertainties.

One‑Step Gas-Solid‑Phase Diffusion‑Induced Elemental Reaction for Bandgap‑Tunable Cu_(a)Agm_(1)Bim_(2)I_(n)/CuI Thin Film Solar Cells

Lead-free inorganic copper-silver-bismuth-halide materials have attracted more and more attention due to their environmental friendliness,high element abundance,and low cost.Here,we developed a strategy of one-step gas-solid-phase diffusioninduced reaction to fabricate a series of bandgap-tunable Cu_(a)Agm_(1)Bim_(2)I_(n)/CuI bilayer films due to the atomic diffusion effect for the first time.By designing and regulating the sputtered Cu/Ag/Bi metal film thickness,the bandgap of Cu_(a)Agm_(1)Bim_(2)I_(n)/CuI could be reduced from 2.06 to 1.78 eV.Solar cells with the structure of FTO/TiO_(2)/Cu_(a)Agm_(1)Bim_(2)I_(n)/CuI/carbon were constructed,yielding a champion power conversion efficiency of 2.76%,which is the highest reported for this class of materials owing to the bandgap reduction and the peculiar bilayer structure.The current work provides a practical path for developing the next generation of efficient,stable,and environmentally friendly photovoltaic materials.

Sub-bandgap refractive indexes and optical properties of Sidopedβ-Ga_(2)O_(3) semiconductor thin films

In this article,we present a theoretical study on the sub-bandgap refractive indexes and optical properties of Sidopedβ-Ga_(2)O_(3) thin films based on newly developed models.The measured sub-bandgap refractive indexes ofβ-Ga_(2)O_(3) thin film are explained well with the new model,leading to the determination of an explicit analytical dispersion of refractive indexes for photon energy below an effective optical bandgap energy of 4.952 eV for theβ-Ga_(2)O_(3) thin film.Then,the oscillatory structures in long wavelength regions in experimental transmission spectra of Si-dopedβ-Ga_(2)O_(3) thin films with different Si doping concentrations are quantitively interpreted utilizing the determined sub-bandgap refractive index dispersion.Meanwhile,effective optical bandgap values of Si-dopedβ-Ga_(2)O_(3) thin films are further determined and are found to decrease with increasing the Si doping concentration as expectedly.In addition,the sub-bandgap absorption coefficients of Si-dopedβ-Ga_(2)O_(3) thin film are calculated under the frame of the Franz–Keldysh mechanism due to the electric field effect of ionized Si impurities.The theoretical absorption coefficients agree with the available experimental data.These key parameters obtained in the present study may enrich the present understanding of the sub-bandgap refractive indexes and optical properties of impurity-dopedβ-Ga_(2)O_(3) thin films.

A Novel CMOS Current Mode Bandgap Reference

A novel CMOS bandgap reference is presented. The output reference of this new current mode structure can be set to an arbitrary value above the bandgap voltage of silicon,avoiding offset in application. It also overcomes the systematic mismatch of conventional current mode bandgap references. The proposed bandgap reference has been implemented in UMC 0.18μm mixed mode technology. Under the supply voltage of 1.6V, the proposed bandgap reference provides an output reference of 1.45V and consumes 27μA of supply current. Using no curvature compensation,it can reach a temperature coefficient of 23ppm/℃ from 30 to 150℃ with a line regulation of 2. 1mV/V from 1.6 to 3V and a PSRR of 40dB at DC frequency. The chip area of the bandgap reference （without pad） is 0. 088mm^2.

A Piecewise-Linear Compensated Bandgap Reference

A bandgap voltage reference is presented with a piecewise linear compensating circuit in order to reduce the temperature coefficient.The basic principle is to divide the whole operating temperature range into some sub ranges.At different temperature sub ranges the bandgap reference can be compensated by different linear functions.Since the temperature sub range is much narrower than the whole range,the compensation error can be reduced significantly.Theoretically,the precision can be improved unlimitedly if the sub ranges are narrow enough.In the given example,with only three temperature sub ranges,the temperature coefficient of a conventional bandgap reference drops from 1 5×10 -5 /℃ to 2×10 -6 /℃ over the -40℃ to 120℃ temperature range.

A Near-1V 10ppm/℃ CMOS Bandgap Reference with Curvature Compensation

A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppmFC from 0 to 150℃. With a 1.1V supply voltage,the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0. 186mm^2 of chip area.

一种电流求和型的低功耗Bandgap电压基准源

为满足标准P阱CMOS工艺要求 ,设计了一种新的电流求和型Bandgap电压基准电路 ,实现了相对于地的稳定电压输出 ,并且能提供多电压基准输出 .电路采用 0 6μmUMCP阱CMOS工艺验证 ,HSPICE模拟结果表明 :电路输出基准电压为 80 0mV ;在 - 40～ 85℃的温度变化范围内 ,电路温度系数仅为 1 4× 1 0 -6/℃ ;电源电压为 3 5V时 ,电路功耗低 ,消耗电流仅为 1 5 μA .该电路不需改变现有工艺 ,输出灵活 。

Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys

The transitions of E0 ,E0 ＋A0, and E＋ in dilute GaAs（1-x） Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E＋ and E0 ＋ A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.

A resistorless CMOS bandgap reference with below 1 V output

This paper proposes a resistorless CMOS bandgap reference (BGR) circuit capable of generating a voltage less than 1V and presents a high performance start up circuit that can make the BGR circuit achieve the correct operation point at power on. The simulation with Hspice was carried out using a 0 25 μm CMOS process. The results indicate that the proposed BGR circuit can operate on a 2 2 to 3 3 V power supply and its output voltage has a variation of 11 mV at -10 to 80 ℃.

A High-PSRR CMOS Bandgap Reference Without Resistor

A CMOS bandgap reference （BGR） without a resistor,with a high power supply rejection ratio and output be- low 1V is proposed. The circuit is suited for on-chip voltage down converters. The BGR is designed and fabricated using an HUTC 0.18μm CMOS process. The silicon area is only 0. 031mm^2 excluding pads and electrostatic-discharge （ESD） protec- tion circuits. Experimental results show that the PSRR of the proposed BGR at 100Hz and lkHz achieves, respectively, - 70 and 62dB using the pre-regulator. The proposed BGR circuit generates an output voltage of 0. 5582V with a varia- tion of 1.5mV in a temperature range from 0 to 85℃. The deviation of the output voltage is within 2mV when the power supply voltage VDD changes from 2.4 to 4V.