The effect of high-temperature annealing on LaFe_(11.5)Si_(1.5) and the magneto-caloric properties of La_(1-x)Ce_xFe_(11.5)Si_(1.5) compounds

The powder X-ray diffraction patterns of LaFell.sSil.5 compounds annealed at different high temperatures from 1323 K （5 h） to 1623 K （2 h） show that a large amount of 1：13 phase begins to form in LaFell.sSiL5 compound annealed at 1423 K （5 h）. In the temperature range from 1423 to 1523 K, ^-Fe and LaFeSi phases rapidly decrease to form 1：13 phase. LaFeSi phase is rarely observed, and the most amount of 1：13 phase is obtained in the compound annealed at 1523 K （5 h）. With the annealing temperature increasing to 1573 and 1623 K, LaFeSi is detected again in the LaFell.sSil.s compound. According to the results of annealing at different high-temperatures, the Lal-xCexFelt.sSit.5 compounds are annealed at high temperatures of 1373 K （2 h） ＋ 1523 K （5 h）. The main phase is NaZn13-type phase, and the impurity is a small amount of et-Fe in Lal-xCexFexx.sSil.5 compounds with 0 〈 x 〈 0.35, and there is a large amount of CeaFe17 phase in Lao.sCeo.sFela.sSil.s. It indicates that the substitution of cerium atoms for La in LaFelLsSil.5 compounds has limit. At the same time, the substitution of Ce for La has large effect on magnetocaloric properties. With increasing Ce content from x = 0 to x = 0.35, the Curie temperature decreases linearly from 196 to 168 K, the magnetic entropy change increases from 16.5 to 57.3 J-kg-kK-1 in a low magnetic field change of 0-2 T, and the thermal hysteresis also increases from 3 K to 8 K.

High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC

Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The （0001）-oriented 6H-SiC wafers are implanted with 15keV helium ions at a dose of 1×10^17 cm^-2 at room temperature. The samples with post-implantation are annealed at temperatures of 1073, 1173, 1273, and 1473K for 30rain. He bubbles in the wafers are examined via cross-sectional transmission electron microscopy （XTEM） analysis. The results present that nanoscale bubbles are almost homogeneously distributed in the damaged layer of the as-implanted sample, and no significant change is observed in the He-implanted sample after 1073 K annealing. Upon 1193 K annealing, almost full recrystallization of He-implantation-induced amorphization in 6H-SiC is observed. In addition, the diameters of He bubbles increase obviously. With continually increasing temperatures to 1273K and 1473 K, the diameters of He bubbles increase and the number density of lattice defects decreases. The growth of He bubbles after high temperature annealingabides by the Ostwald ripening mechanism. The mean diameter of He bubbles located at depths of 120-135 nm as a function of annealing temperature is fitted in terms of a thermal activated process which yields an activation energy of 1.914＋0.236eV.

Influences of high-temperature annealing on atomic layer deposited Al_2O_3/4H-SiC

High-temperature annealing of the atomic layer deposition （ALD） of Al2O3 films on 4H-SiC in O 2 atmosphere is studied with temperature ranging from 800℃ to 1000℃. It is observed that the surface morphology of Al2O3 films annealed at 800℃ and 900℃ is pretty good, while the surface of the sample annealed at 1000℃ becomes bumpy. Grazing incidence X-ray diffraction （GIXRD） measurements demonstrate that the as-grown films are amorphous and begin to crystallize at 900℃. Furthermore, C–V measurements exhibit improved interface characterization after annealing, especially for samples annealed at 900℃ and 1000℃. It is indicated that high-temperature annealing in O2 atmosphere can improve the interface of Al2O3 /SiC and annealing at 900℃ would be an optimum condition for surface morphology, dielectric quality, and interface states.

Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition

The effect of high-temperature annealing on A1N thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence （PL） with the excitation wavelength as short as ~ 177 nm. Annealing experiments were carded out in either N2 or vacuum atmosphere with the annealing temperature ranging from 1200 ℃ to 1600 ℃. It is found that surface roughness reduced and compres- sive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL--ON complex in the A1N material.

Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investi- gated by photoluminescenee （PL） and x-ray photoelectron spectroscopy （XPS）. It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence （YL） and blue luminescence （BL） bands dramatically decrease after annealing at 700℃. At the annealing temperature higher than 900℃, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen an- nealed GaN decreases at the temperature ranging from 900℃ to 1000℃. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000℃.

Comprehensive study of crystalline AlN/sapphire templates after high-temperature annealing with various sputtering conditions

High-quality AlN/sapphire templates were fabricated by the combination of sputtering and high-temperature(HT)annealing.The influence of sputtering parameters including nitrogen flux,radio frequency power,and substrate temperature on the crystalline quality and surface morphology of annealed AlN films were investigated.With lower substrate temperature,lower power,and lower N2 flux,the full width at half maximum of the X-ray rocking curve for AlN(0002)and(102)were improved to 97.2 and 259.2 arcsec after high-temperature annealing.This happens because the increased vacancy concentration of sputtered AlN films can facilitate the annihilation of dislocations by increasing the recovery rate during HT annealing.Step and step-bunching morphologies were clearly observed with optimized sputtering conditions.

Segregations and desorptions of Ge atoms in nanocomposite Si_(1-x)Ge_x films during high-temperature annealing

Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition （jet-ICPCVD）. The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing, are investigated. When the annealing temperature （Ta） is 900℃, the nanocomposite Si1-xGex films are well crystallized, and nanocrystals （NCs） with the core-shell structure form in the films. After being annealed at 1000℃ （above the melting point of bulk Ge）, Ge atoms accumulate on the surfaces of Ge-rich films, whereas pits appear on films with lower Ge content, resulting from desorption. Meanwhile, voids are observed in the films. A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.

Effect of High-temperature Annealing on Mechanical Performance and Microstructures of Different Oxygen SiC Fibers

In order to explore the effect of high-temperature annealing on the mechanical performances and microstructures of different oxygen SiC fibers, two types of silicon carbide（SiC）-based fibers, specified as XD-SiC fibers（low oxygen） and Nicalon-201 fibers（high oxygen）, were annealed in Ar for 1 h at 800 ℃, 1 000 and 1 200 ℃, respectively. Mechanical properties of these fibers were characterized via a monofilament tensile method, with observation of the damaged monofilament by SEM. Also, the effects of annealing on the microstructure and chemical compositions of the fibers were studied. The experimental results indicated that the tensile strength decreased with the increase of annealing temperatures,after annealing-treatment at 1200℃, XD-SiC fibers remained 84% of its original strength, while Nicalon-201 fibers remained only 58% of its original strength. Crystallization and chemical composition of the fibers are the dominating factors for their mechanical performance at high temperatures. The microstructure changes of XD-SiC fibers are mainly composed of the growth of β-SiC, for Nicalon-201 fibers, evaporation of gases is the main change for microstructure.

Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire

We report on the performance of AlGaN-based deep ultraviolet light-emitting diodes(UV-LEDs)emitting at 265 nm grown on stripe-patterned high-temperature annealed(HTA)epitaxially laterally overgrown(ELO)aluminium nitride(AIN)/sapphire templates.For this purpose,the structural and electro-optical properties of ultraviolet-c light-emitting diodes(UVC-LEDs)on as-grown and on HTA planar AlN/sapphire as well as ELO AlN/sapphire with and without HTA are investigated and compared.Cathodoluminescence measurements reveal dark spot densities of 3.5×10^9 cm^-2,1.1×10^9 cm^-2,1.4×10^9 cm^-2,and 0.9×10^9 cm^-2 in multiple quantum well samples on as-grown planar AIN/sapphire,HTA planar AlN/sapphire,ELO AlN/sapphire,and HTA ELO AlN/sapphire,respectively,and are consistent with the threading dislocation densities determined by transmission electron microscopy(TEM)and high-resolution X-ray diffraction rocking curve.The UVC-LED performance improves with the reduction of the threading dislocation densities(TDDs).The output powers(measured on-wafer in cw operation at 20 mA)of the UV-LEDs emitting at 265 nm were 0.03 mW(planar AlN/sapphire),0.8 mW(planar HTA AlN/sapphire),0.9 mW(ELO AlN/sapphire),and 1.1 mW(HTA ELO AlN/sapphire),respectively.Furthermore,Monte Carlo ray-tracing simulations showed a 15%increase in light-extraction efficiency due to the voids formed in the ELO process.These results demonstrate that HTA ELO AlN/sapphire templates provide a viable approach to increase the efficiency of UV-LEDs,improving both the internal quantum efficiency and the light-extraction efficiency.

Studies of short-time and high-temperature annealing and magnetic property of LaFe_(11.4)Si_(1.6) compound

The LaFe11.4Si1.6 compounds are prepared by arc-melting and then annealed at different high temperatures from 1323 K （5 h） to 1623 K （2 h）. The powder X-ray diffraction （XRD） and microstructure observations show that large amount of 1：13 phase begins to appear in the LaFe11.4Si1.6 compound annealed at 1423 K （5 h）. In the temperature range from 1423 K to 1523 K, the α-Fe and LaFeSi phases rapidly decrease to form 1：13 phase. The LaFeSi phase is rarely observed by XRD when the as-cast compound is annealed at 1523 K （5 h）. With annealing temperature increasing to 1573 K, LaFeSi phase is detected again in LaFe11.4Si1.6 compound. In LaFe11.4Si1.6 compounds annealed at 1523 K （5 h）, at 1373 K （2 h）＋1523 K （5 h）, and 1523 K （7 h）＋1373 K （2 h）, the impurity phases including small amount of α-Fe and LaFeSi phase reduce in turn. The magnetic measurement shows that LaFe11.4Si1.6 compounds annealed by above three processes keep the first-order of magnetic transition behavior, and Tc are both at about 200 K. But the values of the maximal ASM（T, H） of has large difference, they are 9.94, 12.66, and 13.96 J/（kg.K） under a magnetic field of 0- 2 T, respectively.

Dependence of Atomic-Scale Si(110) Surface Roughness on Hydrogen Introduction Temperature after High-Temperature Ar Annealing

The atomic-scale surface roughness of Si(110) reconstructed via high-temperature Ar annealing is immediately increased by non uniform accidental oxidation during the unloading process (called reflow oxidation) during high-temperature Ar annealing. In particular, for a reconstructed Si(110) surface, characteristic line-shaped oxidation occurs at preferential oxidation sites appearing in pentagonal pairs in the directions of Si[-112] and/or [-11-2]. We previously reported that the roughness increase of reconstructed Si(110) due to reflow oxidation can be restrained by replacing Ar gas with H2 gas at 1000&#176C during the cooling to 100&#176C after high-temperature Ar annealing. It was speculated that preferential oxidation sites on reconstructed Si(110) were eliminated by H2 gas etching and hydrogen termination of dangling bonds. Thus, it is necessary to investigate the effect of H2 gas etching and hydrogen termination behavior on the reconstructed Si(110) surface structure. In this study, we evaluated in detail the relationship between the temperature at which the H2 gas replaces the Ar in high-temperature Ar annealing and the reconstructed Si(110) surface structure. The maximum height of the roughness on the reconstructed surface was the same as if Ar gas was used when the H2 gas introduction temperature was 200&#176C, although the amount of reflow oxidation was decreased to 70% by hydrogen termination. Furthermore, line-shaped oxidation still occurs when H2 gas replaces Ar at this low temperature. Therefore, we conclude that oxidation is caused by slight Si etching at low temperatures, and thus the preferential oxidation sites on the reconstructed structure must be eliminated by hydrogen etching in order to form an atomically smooth Si(110) surface.

Harness High-Temperature Thermal Energy via Elastic Thermoelectric Aerogels

Despite notable progress in thermoelectric(TE)materials and devices,developing TE aerogels with high-temperature resistance,superior TE performance and excellent elasticity to enable self-powered high-temperature monitoring/warning in industrial and wearable applications remains a great challenge.Herein,a highly elastic,flame-retardant and high-temperature-resistant TE aerogel,made of poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate)/single-walled carbon nanotube(PEDOT:PSS/SWCNT)composites,has been fabricated,displaying attractive compression-induced power factor enhancement.The as-fabricated sensors with the aerogel can achieve accurately pressure stimuli detection and wide temperature range monitoring.Subsequently,a flexible TE generator is assembled,consisting of 25 aerogels connected in series,capable of delivering a maximum output power of 400μW when subjected to a temperature difference of 300 K.This demonstrates its outstanding high-temperature heat harvesting capability and promising application prospects for real-time temperature monitoring on industrial high-temperature pipelines.Moreover,the designed self-powered wearable sensing glove can realize precise wide-range temperature detection,high-temperature warning and accurate recognition of human hand gestures.The aerogel-based intelligent wearable sensing system developed for firefighters demonstrates the desired self-powered and highly sensitive high-temperature fire warning capability.Benefitting from these desirable properties,the elastic and high-temperature-resistant aerogels present various promising applications including self-powered high-temperature monitoring,industrial overheat warning,waste heat energy recycling and even wearable healthcare.

Enhanced High-Temperature Energy Storage Performance of All-Organic Composite Dielectric via Constructing Fiber-Re in forced Structure

Optimizing the high-temperature energy storage characteristics of energy storage dielectrics is of great significance for the development of pulsed power devices and power control systems.Selecting a polymer with a higher glass transition temperature(T_(g))as the matrix is one of the effective ways to increase the upper limit of the polymer operating temperature.However,current high-T_(g)polymers have limitations,and it is difficult to meet the demand for high-temperature energy storage dielectrics with only one polymer.For example,polyetherimide has high-energy storage efficiency,but low breakdown strength at high temperatures.Polyimide has high corona resistance,but low high-temperature energy storage efficiency.In this work,combining the advantages of two polymer,a novel high-T_(g)polymer fiber-reinforced microstructure is designed.Polyimide is designed as extremely fine fibers distributed in the composite dielectric,which will facilitate the reduction of high-temperature conductivity loss for polyimide.At the same time,due to the high-temperature resistance and corona resistance of polyimide,the high-temperature breakdown strength of the composite dielectric is enhanced.After the polyimide content with the best high-temperature energy storage characteristics is determined,molecular semiconductors(ITIC)are blended into the polyimide fibers to further improve the high-temperature efficiency.Ultimately,excellent high-temperature energy storage properties are obtained.The 0.25 vol%ITIC-polyimide/polyetherimide composite exhibits high-energy density and high discharge efficiency at 150℃(2.9 J cm^(-3),90%)and 180℃(2.16 J cm^(-3),90%).This work provides a scalable design idea for high-performance all-organic high-temperature energy storage dielectrics.

TiN/Fe_(2)N/C composite with stable and broadband high-temperature microwave absorption

Facing the complex variable high-temperature environment,electromagnetic wave(EMW)absorbing materials maintaining high stability and satisfying absorbing properties is essential.This study focused on the synthesis and EMW absorbing performance evaluation of TiN/Fe_(2)N/C composite materials,which were prepared using electrostatic spinning followed by a high-temperature nitridation process.The TiN/Fe_(2)N/C fibers constructed a well-developed conductive network that generates considerable conduction loss.The heterogeneous interfaces between different components generated a significant level of interfacial polarization.Thanks to the synergistic effect of stable dielectric loss and optimized impedance matching,the TiN/Fe_(2)N/C composite materials demonstrated excellent and stable absorption performance across a wide temperature range(293-453 K).Moreover,TiN/Fe_(2)N/C-15 achieved a minimum reflection loss(RL)of−48.01 dB and an effective absorption bandwidth(EAB)of 3.64 GHz at 2.1 mm and 373 K.This work provides new insights into the development of high-efficiency and stabile EMW absorbing materials under complex variable high-temperature conditions.

Evolution of microstructure and properties of a novel Ni-based superalloy during stress relief annealing

We discussed the decrease in residual stress,precipitation evolution,and mechanical properties of GH4151 alloy in different annealing temperatures,which were studied by the scanning electron microscope(SEM),high-resolution transmission electron microscopy(HRTEM),and electron backscatter diffraction(EBSD).The findings reveal that annealing processing has a significant impact on diminishing residual stresses.As the annealing temperature rose from 950 to 1150℃,the majority of the residual stresses were relieved from 60.1 MPa down to 10.9 MPa.Moreover,the stress relaxation mechanism transitioned from being mainly controlled by dislocation slip to a combination of dislocation slip and grain boundary migration.Meanwhile,the annealing treatment promotes the decomposition of the Laves,accompanied by the precipitation ofμ-(Mo_(6)Co_(7))starting at 950℃ and reaching a maximum value at 1050℃.The tensile strength and plasticity of the annealing alloy at 1150℃ reached the maximum(1394 MPa,56.1%)which was 131%,200%fold than those of the as-cast alloy(1060 MPa,26.6%),but the oxidation process in the alloy was accelerated at 1150℃.The enhancement in durability and flexibility is primarily due to the dissolution of the brittle phase,along with the shape and dispersal of theγ′phase.

Precipitation behavior of 14H LPSO structure in single 18R phase Mg-Y-Zn alloy during annealing at 773K

The microstructural evolution of a 18R single phase （S 18） alloy during annealing at 773 K for 100 h was investigated in order to reveal the formation mechanism of 14H phase. The results showed that the as-cast S 18 alloy was composed of 18R phase （its volume fraction exceeds 93%）, W particles and α-Mg phase. The 18R phase in S18 alloy was thermally stable and was not transformed into 14H long period stacking ordered （LPSO） phase during annealing. However, 14H lamellas formed within tiny α-Mg slices, and their average size and volume fraction increased with prolonging annealing time. Moreover, the 14H phase is nucleated within α-Mg independently on the basis of basal stacking faults （SFs）. The broadening growth of 14H lamellas is an interface-controlled process which involves ledges on basal planes, while the lengthening growth is a diffusion-controlled process and is associated with diffusion of solute atoms. The formation mechanism of 14H phase in this alloy could be explained as α-Mg＇→α-Mg＋14H.

HZSM-5 zeolites undergoing the high-temperature process for boosting the bimolecular reaction in n-heptane catalytic cracking

High-temperature treatment is key to the preparation of zeolite catalysts.Herein,the effects of hightemperature treatment on the property and performance of HZSM-5 zeolites were studied in this work.X-Ray diffraction,N2physisorption,27Al magic angle spinning nuclear magnetic resonance(MAS NMR),and temperature-programmed desorption of ammonia results indicated that the hightemperature treatment at 650℃ hardly affected the inherent crystal and texture of HZSM-5zeolites but facilitated the conversion of framework Al to extra-framework Al,reducing the acid site and enhancing the acid strength.Moreover,the high-temperature treatment improved the performance of HZSM-5 zeolites in n-heptane catalytic cracking,promoting the conversion and light olefins yield while inhibiting coke formation.Based on the kinetic and mechanism analysis,the improvement of HZSM-5 performance caused by high-temperature treatment has been attributed to the formation of extra-framework Al,which enhanced the acid strength,facilitated the bimolecular reaction,and promoted the entropy change to overcome a higher energy barrier in n-heptane catalytic cracking.

Achieving High Strength and Tensile Ductility in Pure Nickel by Cryorolling with Subsequent Low-Temperature Short-Time Annealing

Ultra fine-grained pure metals and their alloys have high strength and low ductility.In this study,cryorolling under different strains followed by low-temperature short-time annealing was used to fabricate pure nickel sheets combining high strength with good ductility.The results show that,for different cryorolling strains,the uniform elongation was greatly increased without sacrificing the strength after annealing.A yield strength of 607 MPa and a uniform elongation of 11.7%were obtained after annealing at a small cryorolling strain(ε=0.22),while annealing at a large cryorolling strain(ε=1.6)resulted in a yield strength of 990 MPa and a uniform elongation of 6.4%.X-ray diffraction(XRD),transmission electron microscopy(TEM),scanning electron microscopy(SEM),and electron backscattered diffraction(EBSD)were used to characterize the microstructure of the specimens and showed that the high strength could be attributed to strain hardening during cryorolling,with an additional contribution from grain refinement and the formation of dislocation walls.The high ductility could be attributed to annealing twins and micro-shear bands during stretching,which improved the strain hardening capacity.The results show that the synergistic effect of strength and ductility can be regulated through low-temperature short-time annealing with different cryorolling strains,which provides a new reference for the design of future thermo-mechanical processes.

Synergistic effect of Zr and Mo on precipitation and high-temperature properties of Al-Si-Cu-Mg alloys

This study focuses on finding a solution to the sharp decline in mechanical properties of Al-Si-Cu-Mg alloys due to rapid coarsening of traditional intermediate phases at high temperature.A new type of modified al oy,to be used in automobile engines at high temperatures,was prepared by adding Zr and Mo into Al-Si-Cu-Mg alloy.The synergistic effects of Zr and Mo on the microstructure evolution and high-temperature mechanical properties were studied.Results show that the addition of Zr and Mo generates a series of intermetallic phases dispersed in the alloy.They can improve the strength of the alloy by hindering dislocation movement and crack propagation.In addition,some nano-strengthened phases show coherent interfaces with the matrix and improve grain refinement.The addition of Mo greatly improves the heat resistance of the alloy.The extremely low diffusivity of Mo enables it to improve the thermal stability of the intermetallic phases,inhibit precipitation during aging,reduce the size of the precipitates,and improve the heat resistance of the alloy.

A review of in-situ high-temperature characterizations for understanding the processes in metallurgical engineering

For the rational manipulation of the production quality of high-temperature metallurgical engineering,there are many challenges in understanding the processes involved because of the black box chemical/electrochemical reactors.To overcome this issue,various in-situ characterization methods have been recently developed to analyze the interactions between the composition,microstructure,and solid-liquid interface of high-temperature electrochemical electrodes and molten salts.In this review,recent progress of in-situ hightemperature characterization techniques is discussed to summarize the advances in understanding the processes in metallurgical engineering.In-situ high-temperature technologies and analytical methods mainly include synchrotron X-ray diffraction(s-XRD),laser scanning confocal microscopy,and X-ray computed microtomography(X-rayμ-CT),which are important platforms for analyzing the structure and morphology of the electrodes to reveal the complexity and variability of their interfaces.In addition,laser-induced breakdown spectroscopy,high-temperature Raman spectroscopy,and ultraviolet-visible absorption spectroscopy provide microscale characterizations of the composition and structure of molten salts.More importantly,the combination of X-rayμ-CT and s-XRD techniques enables the investigation of the chemical reaction mechanisms at the two-phase interface.Therefore,these in-situ methods are essential for analyzing the chemical/electrochemical kinetics of high-temperature reaction processes and establishing the theoretical principles for the efficient and stable operation of chemical/electrochemical metallurgical processes.