Unveiling non-radiative center control in CsPbBr_(3) nanocrystals:A comprehensive comparative analysis of hot injection and ligandassisted reprecipitation approaches

Metal-halide perovskite nanocrystals(NCs)have gained significant attention in the field of optoelectronic and photonic devices due to their promising applications.Despite their exceptional optical properties,the impact of different synthetic strategies on the fundamental nature of NCs,such as nonradiative recombination centers,remains poorly understood.In this study,we investigated the photophysical properties of CsPbBr_(3) NCs synthesized using two distinct methods,hot injection and ligand-assisted reprecipitation,at the individual particle level.We observed different blinking behaviors under specific photoexcitation power densities and proposed,through intensity-lifetime analysis and Monte-Carlo simulations,that these different synthetic strategies can fabricate NCs with similar crystal structures but distinct surface quenchers with varying energy levels,which significantly affected the photo-induced blinking-down and blinking-up behaviors in individual NCs.Our findings indicate a practical and feasible approach for controlling defect engineering in perovskite NCs,with significant implications for their use in optoelectronic and other technological applications.

Manufacturing of ceramic cores:From hot injection to 3D printing

With the improvement of aero-engine performance,the preparation of hollow blades of single-crystal superalloys with complex inner cavity cooling structures is becoming increasingly urgent.The ceramic core is the key intermediate part of the preparation and has attracted wide attention.To meet this challenge,new technologies that can make up for the defects of long periods and high costs of fabricating complex structural cores by traditional hot injection technology are needed.Vat photopolymerization 3D printing ceramic technology has been applied to the core field to realize the rapid preparation of complex structural cores.However,the industrial application of this technology still needs further research and improvement.Herein,ceramic cores were prepared using traditional hot injection and vat photopolymerization 3D printing techniques using fused silica,nano-ZrO_(2),and Al_(2)O_(3) powders as starting materials.The 3D printed ceramic core has a typical layered structure with a small pore size and low porosity.Because of the layered structure,the pore area is larger than that of the hot injection ceramic core,the leaching performance has little effect(0.0277 g/min for 3D printing cores,0.298 g/min for hot injection cores).In the X and Y directions,the sintering shrinkage is low(2.7%),but in the Z direction,the shrinkage is large(4.7%).The fracture occurs when the inner layer crack expands and connects with the interlayer crack,forming a stepped fracture in the 3D-printed cores.The bending strength of the 3D printed core at high temperature(1500℃)is 17.3 MPa.These analyses show that the performance of vat photopolymerization 3D-printed ceramic cores can meet the casting requirements of single crystal superalloy blades,which is a potential technology for the preparation of complex structure ceramic cores.The research mode of 3D printing core technology based on the traditional hot injection process provides an effective new idea for promoting the industrial application of 3D printing core technology.

Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress

The behaviours of three types of hot-hole injections in ultrashort channel lightly doped drain （LDD） nMOSFETs with ultrathin oxide under an alternating stress have been compared. The three types of hot-hole injections, i.e. low gate voltage hot hole injection （LGVHHI）, gate-induced drain leakage induced hot-hole injection （GIDLIHHI） and substrate hot-hole injection （SHHI）, have different influences on the devices damaged already by the previous hot electron injection （HEI） because of the different locations of trapping holes and interface states induced by the three types of injections, i.e. three types of stresses. Experimental results show that GIDLIHHI and LGVHHI cannot recover the degradation of electron trapping, but SHHI can. Although SHHI can recover the device＇s performance, the recovery is slight and reaches saturation quickly, which is suggested here to be attributed to the fact that trapped holes are too few and the equilibrium is reached between the trapping and releasing of holes which can be set up quickly in the ultrathin oxide.

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In0.53Ga0.47As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors （nMOSFETs） are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability （PBTI） and hot carrier injection （HCI） characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.

Hot carrier injection degradation under dynamic stress

In this paper, we have studied hot carrier injection （HCI） different degradations are obtained from the experiment results. under alternant stress. Under different stress modes, The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A （DC stress with electron injection）, the degradation keeps increasing. In the stress modes B （DC stress and then stress with the smMlest gate injection） and C （DC stress and then stress with hole injection under Vg = 0 V and Vd = 1.8 V）, recovery appears in the second stress period. And in the stress mode D （DC stress and then stress with hole injection under Vg = -1.8 V and Vd = 1.8 V）, as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained.

Heating of heavy oil by circulating hot water in closed double casing in ultra-deep wells

In heavy oil production,the loss of energy to ambient surroundings decreases the temperature of the heavy oil flowing upwards in a vertical wellbore,which increases the oil viscosity and the oil may not flow normally in the wellbore.Therefore,it is necessary to lower the heavy oil viscosity by heating methods to allow it to be lifted easily.Heating of heavy oil in an oil well is achieved by circulating hot water in annuli in the well（tubing-casing annulus,casing-casing annulus）.In this paper,based on heat transfer principles and fluid flow theory,a model is developed for produced fluids and hot water flowing in a vertical wellbore.The temperature and pressure of produced fluids and hot water in the wellbore are calculated and the effect of hot water on heavy oil temperature is analyzed.Calculated results show that the hot water circulating in the annuli may effectively heat the heavy oil in the tubing,so as to significantly reduce both oil viscosity and resistance to oil flow.

Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.

Actions of negative bias temperature instability （NBTI） and hot carriers in ultra-deep submicron p-channel metal-oxide-semiconductor field-effect transistors （PMOSFETs）

Hot carrier injection （HCI） at high temperatures and different values of gate bias Vg has been performed in order to study the actions of negative bias temperature instability （NBTI） and hot carriers. Hot-carrier-stress-induced damage at Vg = Vd, where Vd is the voltage of the transistor drain, increases as temperature rises, contrary to conventional hot carrier behaviour, which is identified as being related to the NBTI. A comparison between the actions of NBTI and hot carriers at low and high gate voltages shows that the damage behaviours are quite different： the low gate voltage stress results in an increase in transconductance, while the NBTI-dominated high gate voltage and high temperature stress causes a decrease in transconductance. It is concluded that this can be a major source of hot carrier damage at elevated temperatures and high gate voltage stressing of p-channel metal-oxide-semiconductor field-effect transistors （PMOSFETs）. We demonstrate a novel mode of NBTI-enhanced hot carrier degradation in PMOSFETs. A novel method to decouple the actions of NBTI from that of hot carriers is also presented.

On-Resistance Degradations Under Different Stress Conditions in High Voltage pLEDMOS Transistors and an Improved Method

The on-resistance degradations of the p-type lateral extended drain MOS transistor （pLEDMOS） with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investigated. This difference results from the interface trap generation and the hot electron injection, and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor. An improved method to reduce the on-resistance degradations is also presented, which uses the field oxide as the gate oxide instead of the thick gate oxide. The effects are analyzed with a MEDICI simulator.

Ultra-small PbSe Quantum Dots Synthesis by Chemical Nucleation Controlling

Ultra-small PbSe quantum dots (QDs) were synthesized using conventional hot-injection method.A small amount of Sn was used as a nucleation promotion agent to control nucleation and growth during the QDs synthesis process.The average diameter of the QDs is about 1.6 nm,of which absorption peak centers at 550 nm and photoluminescence peak centers at 750 nm under 350 nm laser excitation with power as low as 500 μW.Transmission electron microscopy images confirm that the QDs size well matches with the calculated diameter from Brus equation.This match and electron energy loss spectroscopy analysis proves that Sn is not involved into the final structure of the ultra-small PbSe QDs.An ion-exchange process was proposed for the nucleation control and ultra-small QDs synthesis.The prepared ultra-small QDs could be a promising candidate for luminescence,solar cell devices,and others.

Plasmonic nanostructures acting as a light-driven O_(2)-sensitive nitroreductase mimic for enhanced photochemical oxidation of para-aminothiophenol

Nanozymes,as a novel form of enzyme mimics,have garnered considerable interest.Despite overcoming the main disadvantages of their natural analogs,they still face challenges such as restricted mimic types and low substrate specificity.Herein,we introduce a reactive ligand modification strategy to diversify enzyme mimic types.Specifically,we have utilized helical plasmonic nanorods(HPNRs)modified with para-nitrothiophenol(4-NTP)to create an oxygen-sensitive nitroreductase(NTR)with light-controllability.HPNRs act as a light-adjustable source of nicotinamide adenine dinucleotide/nicotinamide adenine dinucleotide phosphate(NAD(P)H),providing photon-generated energetic electrons to adsorbed 4-NTP molecules.In the presence of O_(2),the activated 4-NTP transfers the captured electron to the adsorbed O_(2),mimicking the electron transfer process in its natural counterpart.This enhanced O_(2)activation notably boosts the oxidative coupling of para-aminothiophenol(4-ATP).Density functional theory(DFT)calculations reveal that hot electrons injected into the lowest unoccupied molecular orbital(LUMO)energy level of 4-NTP can be transferred to that of molecular oxygen.In conclusion,our findings underline the potential of the reactive ligand modification strategy in developing new types of enzyme reactions,which opens up promising avenues for the enhancement and diversification of nanozyme functionalities.

Earth-abundant CuFeS_(2) nanocrystals@graphite felt electrode for high performance aqueous polysulfide/iodide redox flow batteries

Due to their high energy density and low price,aqueous polysulfide/iodide redox flow batteries are appealing for scalable energy storage.However,the greatest barrier to their practical uses is the low electrochemical kinetics of the redox reactions of polysulfide ions on graphite electrodes,which often limit their energy efficiency and power density.In this study,the CuFeS_(2)nanomaterial was successfully synthesized through the hot injection method,and CuFeS_(2)nanomaterials were uniformly coated onto the surfaces and sandwiched into graphite felt(GF);this process can significantly boost the electrocatalytic activities of S^(2-)/S^(2-)_(x)redox reactions by improving the charge transfer process,which has been proven by the electrochemical measurement and density functional theory(DFT)simulations.The polysulfide-iodide flow battery,with GF-CuFeS_(2)serving as the negative electrode,can achieve a high energy efficiency of 79.6%at 20 mA/cm^(2),a power density of 50.7 mW/cm^(2),and a stable energy efficiency retention of 87.0%after 180 cycles.

Bi_(2)S_(3) Nanostructures: A New Photocatalyst

Uniform colloidal Bi_(2)S_(3) nanodots and nanorods with different sizes have been prepared in a controllable manner via a hot injection method. X-ray diffraction (XRD) results show that the resulting nanocrystals have an orthorhombic structure. Both the diameter and length of the nanorods increase with increasing concentration of the precursors. All of the prepared Bi_(2)S_(3) nanostructures show high efficiency in the photodegradation of rhodamine B, especially in the case of small sized nanodots-which is possibly due to their high surface area. The dynamics of the photocatalysis is also discussed.

Engineering crystal phase of polytypic CuInS2 nanosheets for enhanced photocatalytic and photoelectrochemical performance

Crystal phase engineering on CulnS2(CIS)nanocrystals,especially polytypic structure,has become one of the research hotspots to design the advanced materials and devices for energy conversion and environment treatment.Here,the polytypic CIS nanosheets(NSs)including zincblende/wutzite and chalcopyrite/wurtzite types were first time achieved in a hot-injection system using oleic acid and liquid paraffin as the reaction media.As-obtained polytypic CIS NSs exhibit significantly enhanced light-absorption abillty and visible-light-driven photocatalytic performance originating from the rational hetero-crystalline interfaces and surface defect states,which efficiently inhibit the recombination of photo-generated carriers.Meanwhile,the polytypic CIS NSs were spin-coated onto the surface of fluorinated-tin oxide glass substrate and used as the photoelectrode,which shows an excellent photoelectrochemical(PEC)activity in aqueous solution.The present work not only provides a facile,rapid,low-cost,and environmental-friendly synthesis strategy to design the crystal phase and defect structure of ternary chalcogenides,but also demonstrates the relationships between the polytypic structure and photocatalytic/photoelectrochemical properties.

Energy transfer in plasmonic photocatalytic composites

Among the many novel photocatalytic systems developed in very recent years,plasmonic photocatalytic composites possess great potential for use in applications and are one of the most intensively investigated photocatalytic systems owing to their high solar energy utilization efficiency.In these composites,the plasmonic nanoparticles(PNPs)efficiently absorb solar light through localized surface plasmon resonance and convert it into energetic electrons and holes in the nearby semiconductor.This energy transfer from PNPs to semiconductors plays a decisive role in the overall photocatalytic performance.Thus,the underlying physical mechanism is of great scientific and technological importance and is one of the hottest topics in the area of plasmonic photocatalysts.In this review,we examine the very recent advances in understanding the energy transfer process in plasmonic photocatalytic composites,describing both the theoretical basis of this process and experimental demonstrations.The factors that affect the energy transfer efficiencies and how to improve the efficiencies to yield better photocatalytic performance are also discussed.Furthermore,comparisons are made between the various energy transfer processes,emphasizing their limitations/benefits for efficient operation of plasmonic photocatalysts.

高稳定性铋基钙钛矿纳米晶的可控合成:结构和光物理性质

铋基钙钛矿因毒性低成为铅基钙钛矿的潜在替代品.目前,对铋基钙钛矿纳米晶的化学组成、晶体结构以及光物理过程的研究还缺乏系统性.特别地,紫外-可见吸收光谱和激发态载流子动力学,在已发表的论文中存在相当大的争议.在本文中,我们通过热注入法成功地合成了纯相的Cs_(3)BiBr_(6)和Cs_(3)Bi_(2)Br_(9)纳米晶,并通过调节热注入的温度来精确控制二者的化学组成和结构.在此基础上,系统研究了不同形貌和不同尺寸的Cs_(3)Bi_(2)Br_(9)纳米晶的紫外-可见吸收光谱,澄清了在这方面存在的争议.采用飞秒瞬态吸收光谱系统研究了Cs_(3)Bi_(2)Br_(9)纳米晶的激发态载流子动力学,结果表明载流子在被激发后的3 ps内会发生一个自捕获过程.与配体辅助再沉积法相比,用热注入法制备的Cs_(3)Bi_(2)Br_(9)纳米晶具有更好的光稳定性.基于Cs_(3)Bi_(2)Br_(9)纳米晶的光电探测器具有灵敏的光响应,显示出其在光电探测方面的应用潜力.

A novel method of water remediation of organic pollutants and industrial wastes by solution- route processed CZTS nanocrystals

CZTS(Cu_(2)ZnSnS_(4)),a P-type semiconductor with a direct bandgap(1.2-1.7eV),earth-abundant,non-toxic,and has a large absorption coefficient makes it extremely useful in optoelectronics and light-harvesting applications.In this work,CZTS is prepared by an ingenious,cost-effective colloidal route using the‘hotinjection’method with the usage of different ligands.The XRD and Raman spectroscopy shows the single-phase highly crystalline CZTS nanoparticles with kesterite structure.The TEM results show that the size of CZTS nanoparticles is about 2-5 nm and monodispersity is confirmed by DLS(Dynamic Light Scattering).FTIR confirms the presence of different ligands used in CZTS preparation.The Uv-vis absorption shows the direct bandgap of 1.5-1.7eV.The contact angle study shows the hydrophobic nature of as-synthesized CZTS nanoparticles which were further ligand exchanged with L-cysteine hydrochloride to make it hydrophilic to study the photocatalytic degradation activity of organic pollutants and industrial waste in the water.The photocatalysis experiments were performed under two conditions:(i)under bare sunlight(Intensity~900 W/m^(2))(ii)focussing the sample under the sunlight via converging lens(1800 W/m^(2)).The photocatalytic efficiencies were then compared and the best photocatalytic efficiency achieved under sunlight was 98.4%for organic pollutants and 75%for industrial waste via converging lens while the corresponding efficiencies with bare sunlight were 98.1% and 73% respectively.To the best of the author’s knowledge,a rapid and highly efficient photocatalysis of CZTS NPs employing a converging lens for water-remediation without the usage of noble&transition-metals has been reported for the first time.

Microstructure and mechanical property of MIM 418 superalloy

In this study, the influence of hot isostatic pressing（HIP） process on the 418 alloy produced by metal injection molding（MIM） technique（named as MIM 418）was investigated based on the characteristic analysis of 418 alloy powder. And comparison analysis of the microstructure and mechanical property between the MIM 418 and as-cast 418 alloys was performed by scanning electron microscopy（SEM）, energy-dispersive spectroscopy（EDS）,and X-ray diffraction（XRD）. The results show that MIM418 alloy exhibits fine grain（~30 μm） and uniform microstructure. The defects existing in MIM 418 alloy formed during sintering process can be eliminated through HIP treatment, and the relative density increases from97.0 % to 99.5 %. The mechanical property can be improved significantly because of the elimination of defects, and the tensile strength and elongation are1,271 MPa and 16.8 %, respectively, which are increased by 34.5 % and 180 % compared with K418 alloy after solution heat treatment.

Model of NBTI combined with mobility degradation

The mobility degradation induced by negative bias temperature instability(NBTI) is usually ignored in traditional NBTI modeling and simulation, resulting in overestimation of the circuit lifetime, especially after longterm operation. In this paper, the mobility degradation is modeled in combination with the universal NBTI model.The coulomb scattering induced by interface states is revealed to be the dominant component responsible for mobility degradation. The proposed mobility degradation model fits the measured data well and provides an accurate solution for evaluating coupling of NBTI with HCI(hot carrier injection) and SHE(self-heating effect), which indicates that mobility degradation should be considered in long-term circuit aging simulation.