Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor

Silicon-germanium （SiGe） hereto-junction bipolar transistor current transients induced by pulse laser and heavy iron are measured using a real-time digital oscilloscope. These transients induced by pulse laser and heavy iron exhibit the same waveform and charge collection time except for the amplitude of peak current. Different laser energies and voltage biases under heavy ion irradiation also have impact on current transient, whereas the waveform remains unchanged. The position-correlated current transients suggest that the nature of the current transient is controlled by the behavior of the C/S junction.

Induced current of high temperature superconducting loops by combination of exciting coil and thermal switch

With its commercialization, the second-generation(2G) high temperature superconducting(HTS) RE–Ba–Cu–O(REBCO, RE is rare earth) tape is extensively applied to the superconducting magnets in the high magnetic fields. However,unlike low temperature superconducting(LTS) magnets, the HTS magnet cannot operate in the persistent current mode(PCM) due to the immature superconducting soldering technique. In this paper, an exciting method for two HTS sub-loops,so-called charging and load loops, is proposed by flux pump consisting of exciting coil and controllable thermal switch.Two HTS sub-loops are made of an REBCO tape with two slits. An exciting coil with iron core is located in one sub-loop and is supplied with a triangular waveform current so that magnetic field is generated in another sub-loop. The influence of magnetic flux on induced current in load loop is presented and verified in experiment at 77 K. The relationship between the induced magnetic flux density and the current on the sub-loops having been calibrated, magnetic flux density, and induced current are obtained. The results show that the HTS sub-loops can be excited by a coil with thermal switch and the induced current increases with magnetic flux of exciting coil increasing, which is promising for persistent current operation mode of HTS magnets.

Induced Currents in Pipelines

Changes in the geomagnetic field produce ground induced currents that can have impacts on artificial systems such as pipelines. According to these, geomagnetic perturbations observed during June 2005 are studied. The data measured on the Ottawa River Valley pipeline verify the appearance of induced currents greater than 700 mA and additional potential values larger than ?850 V that can produce additional corrosive effects.

Laser beam induced current microscopy and photocurrent mapping for junction characterization of infrared photodetectors

For non-destructive optical characterization, laser beam induced current(LBIC) microscopy has been developed into as a quantitative tool to examine individual photodiodes within a large pixel array. Two-dimensional LBIC microscopy, also generally called photocurrent mapping(PC mapping), can provide spatially resolved information about local electrical properties and p-n junction formation in photovoltaic infrared(including visible light) photodetectors from which it is possible to extract material and device parameters such as junction area, junction depth, diffusion length, leakage current position and minority carrier diffusion length etc. This paper presents a comprehensive review of research background, operating principle, fundamental issues, and applications of LBIC or PC mapping.

Analysis of current induced by long internal solitary waves in stratified ocean

An approximate theoretical expression for the current induced by long internal solitary waves is presented when the ocean is continuously or two-layer stratified. Particular attention is paid to characterizing velocity fields in terms of magnitude, flow components, and their temporal evolution/spatial distribution. For the two-layer case, the effects of the upper/lower layer depths and the relative layer density difference upon the induced current are further studied. The results show that the horizontal components are basically uniform in each layer with a shear at the interface. In contrast, the vertical counterparts vary monotonically in the direction of the water depth in each layer while they change sign across the interface or when the wave peak passes through. In addition, though the vertical components are generally one order of magnitude smaller than the horizontal ones, they can never be neglected in predicting the heave response of floating platforms in gravitationally neutral balance. Comparisons are made between the partial theoretical results and the observational field data. Future research directions regarding the internal wave induced flow field are also indicated.

Stress Induced Leakage Current in Different Thickness Ultrathin Gate Oxide MOSFET

A study of the gate current variation is presented for various thickness ultrathin gate oxides ranging from 1.9 to 3.0nm under the constant voltage stress.The experimental results show the stress induced leakage current(SILC) includes two parts.One is due to the interface trap-assisted tunneling.The other is owing to the oxide trap-assisted tunneling.

Currents and Electric Fields Induced in Anatomically Realistic Human Models by Extremely Low Frequency Electric Fields

There is increasing public concern about biological interactions with and the potential health effects of low frequency electric and magnetic fields. Recently, the ICNIRP （International Commission on Non-Ionizing Radiation Protection） has published new exposure guidelines with regard to these fields. The aim of this paper is to demonstrate the calculation of the currents and electric fields induced in the human body by external electric fields at 60 Hz, using numerical human models of anatomically-realistic human bodies, and to compare those results with the basic restrictions proposed by the new guidelines. As a result, in the case that a human is exposed to an electric field of 1 kV/m at 60 Hz the short-circuit current of 18 μA flows though the ankles. Furthermore, the electric field of 40 mV/m in the nervous tissue of the adult model is induced by exposure to external electric fields at the reference level, which is enough smaller than the basic restrictions established in the ICNIRP guidelines for occupational exposure.

Development and characterization of photovoltaic tandemjunction nanowires using electron-beam-induced current measurements

Nanowires have many interesting properties that are of advantage for solar cells,such as the epitaxial combination of latticemismatched materials without plastic deformation.This could be utilized for the synthesis of axial tandem-junction nanowire solar cells with high efficiency at low material cost.Electron-beam-induced current measurements have been used to optimize the performance of single-junction nanowire solar cells.Here,we use electron-beam-induced current measurements to break the barrier to photovoltaic tandem-junction nanowires.In particular,we identify and subsequently prevent the occurrence of a parasitic junction when combining an InP n-i-p junction with a tunnel diode.Furthermore,we demonstrate how to use optical and electrical biases to individually measure the electron-beam-induced current of both sub-cells of photovoltaic tandem-junction nanowires.We show that with an applied voltage in forward direction,all junctions can be analyzed simultaneously.The development of this characterization technique enables further optimization of tandem-junction nanowire solar cells.

The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses

The conduction mechanism of stress induced leakage current （SILC） through 2nm gate oxide is studied over a gate voltage range between 1.7V and stress voltage under constant voltage stress （CVS）. The simulation results show that the SILC is formed by trap-assisted tunnelling （TAT） process which is dominated by oxide traps induced by high field stresses. Their energy levels obtained by this work are approximately 1.9eV from the oxide conduction band, and the traps are believed to be the oxygen-related donor-like defects induced by high field stresses. The dependence of the trap density on stress time and oxide electric field is also investigated.

Numerical modelling of the tide - induced residual current in the East China Sea

-A two-dimensional.nonlinear numerical model is used to study the residual current generated by tides in the East China Sea (ECS)and the South Huanghai Sea (SHS). At first, the principal semidiurnal lunar tide (M2)and the tidal current are derived in these areas. The results obtained with the model are strongly supported by the observational results available. Then, the tide-induced residual flow is determined by using the currents generated by the tidal input. The main features of the residual current in ECS and SHS are presented by analyzing the calculated results. Some of the problems are discussed such as the cause of generating residual current and the contribution of the residual current to the observed current.

Screening-current-induced magnetic fields and strains in a compact REBCO coil in self field and background field

REBa_(2)Cu_(3)O_(7−x)(REBCO)coated conductors,owing to its high tensile strength and current‐carrying ability in a background field,are widely regarded a promising candidate in high‐field applications.Despite the great potentials,recent studies have highlighted the challenges posed by screening currents,which are featured by a highly nonuniform current distribution in the superconducting layer.In this paper,we report a comprehensive study on the behaviors of screening currents in a compact REBCO coil,specifically the screeningcurrent‐induced magnetic fields and strains.Experiments were carried out in the self‐generated magnetic field and a background field,respectively.In the self‐field condition,the full hysteresis of the magnetic field was obtained by applying current sweeps with repeatedly reversed polarity,as the nominal center field reached 9.17 T with a maximum peak current of 350 A.In a background field of 23.15 T,the insert coil generated a center field of 4.17 T with an applied current of 170 A.Ultimately,a total center field of 32.58 T was achieved before quench.Both the sequential model and the coupled model considering the perpendicular field modification due to conductor deformation are applied.The comparative study shows that,for this coil,the electromagnetic–mechanical coupling plays a trivial role in self‐field conditions up to 9 T.In contrast,with a high axial field dominated by the background field,the coupling effect has a stronger influence on the predicted current and strain distributions.Further discussions regarding the role of background field on the strains in the insert suggest potential design strategies to maximize the total center field.

Sterilization of Escherichia coli cells by the application of pulsed magnetic field

The inactivation of microorganisms by pulsed magnetic field was studied. It was improved that the application of electromagnetic pulses evidently causes a lethal effect on E. coli cells suspended in phosphate buffer solution Na 2HPO 4/NaH 2PO 4(0 334/0 867 mmol/L). Experimental results indicated that the survivability(N/N 0; where N 0 and N are the number of cells survived per mill il iter before and after electromagnetic pulses application, respectively) of E. coli decreased with magnetic field intensity B and treatment time t. It was also found that the medium temperatures, the frequencies of pulse f, and the initial bacterial cell concentrations have determinate influences in destruction of E. coli cells by the application of magnetic pulses. The application of an magnetic intensity B=160 mT at pulses frequency f=62 kHz and treatment time t=16 h result in a considerable destruction levels of E. coli cells (N/N 0=10 -4 ). Possible mechanisms involved in sterilization of the magnetic field treatment were discussed. In order to shorten the treatment time, many groups of parallel inductive coil were used. The practicability test showed that the treatment time was shortened to 4 h with the application of three groups of parallel coil when the survivability of E.coli cells was less than 0 01%; and the power consumption was about 0 2 kWh /m 3.

Study of Magnetic Force Distribution for Electromagnetic V-shape Bending Forming of Small Size Flat Sheet

Electromagnetic V-shape bending of small size sheet blank is investigated numerically and experimentally. Three-dimensional electromagnetic field models are established to calculate the magnetic force distribution on the sheet by software ANSYS / EMAG. Series of electromagnetic V-shape bending forming experiments are presented,in which small size uniform pressure coil and big size round flat spiral coil are used. The results show that small size uniform pressure coil is not suitable for electromagnetic forming of small size flat sheet,and the coil is susceptible to failure such as bulging,ablation and cracking. When the plane dimension of round flat spiral coil is bigger than sheet blank sizes,the induced current crowding effect will be resulted which seriously influence the magnetic force distribution on the sheet. In this case,magnetic force distribution can be adjusted through the change of the relative position between coil and sheet,the desired deformation can be obtained finally. Therefore,big size round flat spiral coil can be well applied to electromagnetic V-shape bending forming of small size flat sheet.

Electrical Homo-Junction Delineation Techniques: A Comparative Study

In active semiconductor devices, the junction characteristics are critical for the electrical performance. As an alternative of the atomic force microscopy (AFM)-based electrical techniques which provide unique junction characterization, other methods are dedicated for the delineation of the electrical junction such as the wet chemical etching, the electrochemical plating method, the Seebeck effect imaging (SEI) method, the electron-beam induced current (EBIC) technique and the secondary electron potential contrast (SEPC) method. The aim of this paper is in the one hand to compare these five techniques in term of sample preparation, spatial application range, spatial resolution, simplicity and information displayed. In the other hand, this review aims to provide some guidelines for the appropriate delineation method(s) selection. It was confirmed that chemical based techniques are the simplest junction delineation methods but exhibit some drawbacks in term of spatial resolution and reproducibility. Despite of a limited spatial resolution, it was evidenced that EBIC can provide accurate electrical characterization of the junction. Finally, it was demonstrated that SEPC is the most promising technique providing the higher spatial resolution. The effect of the sample preparation method has been described. Even if the comparison was mainly based on homo-micro-Silicon junctions (n-p and n-p-n-p), the results were also discussed for short SiC junctions. The importance of the analysis context was considered in this paper and analysis flow was suggested for specific analysis cases.

Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature

This paper studies the degradation of device parameters and that of stress induced leakage current （SILC） of thin tunnel gate oxide under channel hot electron （CHE） stress at high temperature by using n-channel metal oxide semiconductor field effect transistors （NMOSFETs） with 1.4-nm gate oxides. The degradation of device parameters under CHE stress exhibits saturating time dependence at high temperature. The emphasis of this paper is on SILC of an ultra-thin-gate-oxide under CHE stress at high temperature. Based on the experimental results, it is found that there is a linear correlation between SILC degradation and Vh degradation in NMOSFETs during CHE stress. A model of the combined effect of oxide trapped negative charges and interface traps is developed to explain the origin of SILC during CHE stress.

A Moving Coordinate Numerical Method for Analyses of Electromagneto-Mechanical Coupled Behavior of Structures in a Strong Magnetic Field Aiming at Application to Tokamak Structures

Analysis of the electromagneto-mechanical coupling effect contributes greatly to the high accuracy estimation of the EM load of many EM devices, such as a tokamak structure during plasma disruption. This paper presents a method for the numerical analysis of the electromagnetomechanical coupling effect on the basis of Maxwell＇s equations in the Lagrangian description and staggered load transfer scheme, which can treat the coupled behaviors of magnetic damping and magnetic stiffness effects at the same time. Codes were developed based on the ANSYS development platform and were applied to solve two typical numerical examples： the TEAM Problem 16 and dynamic behavior analysis of a shallow arch under electromagnetic force. The good consistency of numerical results and experimental data demonstrates the validity and accuracy of the proposed method and the related numerical codes.

Endogenous bioelectric fields: a putative regulator of wound repair and regeneration in the central nervous system

Studies on a variety of highly regenerative tissues, including the central nervous system（CNS） in non-mammalian vertebrates, have consistently demonstrated that tissue damage induces the formation of an ionic current at the site of injury. These injury currents generate electric fields（EF） that are 100-fold increased in intensity over that measured for uninjured tissue. In vitro and in vivo experiments have convincingly demonstrated that these electric fields（by their orientation, intensity and duration） can drive the migration, proliferation and differentiation of a host of cell types. These cellular behaviors are all necessary to facilitate regeneration as blocking these EFs at the site of injury inhibits tissue repair while enhancing their intensity promotes repair. Consequently, injury-induced currents, and the EFs they produce, represent a potent and crucial signal to drive tissue regeneration and repair. In this review, we will discuss how injury currents are generated, how cells detect these currents and what cellular responses they can induce. Additionally, we will describe the growing evidence suggesting that EFs play a key role in regulating the cellular response to injury and may be a therapeutic target for inducing regeneration in the mammalian CNS.

INERTIAL THEORY FOR OCEANIC CROSS-EQUATORIAL JET

In this paper, a theory for inertial boundary layer is developed to study the northward forced and the southward induced cross-equatorial jets by easterlies in the Southern Hemisphere in west and east boundaries respectively. The solutions of the nonlinear potential vorticity equation and the Bernoulli equation show that subtle changes of the physical parameters can produce different equi- librium states and the velocity of these jets all can reach 10°m/s which are comparable to observa- tions. Simulations show that the induced current in the east boundary is very important to the for- mation of the local eastward equatorial current in the east boundary. This can be used to study the characteristics of the local surface eastward equatorial current during E1 Nino periods,

Imaging the influence of oxides on the electrostatic potential of photovoltaic InP nanowires

Nanowires require surface passivation due to their inherent large surface to volume ratio. We investigate the effect of embedding InP nanowires in different oxides with respect to surface passivation by use of electron beam induced current measurements enabled by a nanoprobe based system inside a scanning electron microscope. The measurements reveal remote doping due to fixed charge carriers in the passivating PO_(x)/Al_(2)O_(3) shell in contrast to results using SiO_(x). We used time-resolved photoluminescence to characterize the lifetime of charge carriers to evaluate the success of surface passivation. In addition, spatially resolved internal quantum efficiency simulations support and correlate the two applied techniques. We find that atomic-layer deposited PO_(x)/Al_(2)O_(3) has the potential to passivate the surface of InP nanowires, but at the cost of inducing a field-effect on the nanowires, altering their electrostatic potential profile. The results show the importance of using complementary techniques to correctly evaluate and interpret processing related effects for optimization of nanowire-based optoelectronic devices.

Dopingless impact ionization MOS(DL-IMOS)—a remedy for complex process flow

We propose a unique approach for realizing dopingless impact ionization MOS （DL-IMOS） based on the charge plasma concept as a remedy for complex process flow. It uses work-function engineering of electrodes to form charge plasma as surrogate doping. This charge plasma induces a uniform p-region in the source side and an n-region in the drain side on intrinsic silicon film with a thickness less than the intrinsic Debye length. DL-IMOS offers a simple fabrication process flow as it avoids the need of ion implantation, photo masking and complicated thermal budget via annealing devices. The lower thermal budget is required for DL-IMOS fabrication enables its fabrication on single crystal silicon-on-glass substrate realized by wafer scale epitaxial transfer. It is highly immune to process variations, doping control issues and random dopant fluctuations, while retaining the inherent advantages of conventional IMOS. To epitomize the fabrication process flow for the proposed device a virtual fabrication flow is also proposed here. Extensive device simulation of the major device performance metrics such as subthreshold slope, threshold voltage, drain induced current enhancement, and breakdown voltage have been done for a wide range of electrodes work-function. To evaluate the potential applications of the proposed device at circuit level, its mixed mode simulations are also carried out.