IMPROVING MATERIAL REMOVAL RATE OF BRITTLE CERAMICS THROUGH HONING INCIDENTAL TENSILE STRESSES

The stress intensity factors and stress conditions of machining cracks are analyzed by fracture mechanics on the basis of honing characteristics and of brittle ceramic mechanical behavior.Because the honing incidental tensile stresses effectively decrease the critical grinding stresses and increase the stress intensity factors of machining cracks,the honing process can be carried out easily.The results show that honing can be an efficient machining method for brittle materials.

On investigating the soda-lime shot blasting of AZ31 alloy:Effects on surface roughness,material removal rate,corrosion resistance,and bioactivity

In the present study,a novel method of surface finish improvement is proposed using shot blasting of soda lime(SBSL)beads on the Mg-AZ31 alloy.The effect of the soda blasting process parameters,such as blast pressure,stand-off distance,and blast duration,have been studied in-response of material removal rate(MRR)and surface roughness(SR)and corresponding statistical models have been obtained.The multi-objective optimization has also been performed to obtain parameters for maximum MRR and minimum SR.The corrosion behavior of the treated specimens has been performed to study their in-vitro biodegradability in simulated body fluid(SBF)for 1,3,7,10,15,and 21 days.The wettability study of the SBSL treated samples has been investigated using sessile drop methodology.Further,cell adhesion test has also been performed to study the biocompatibility characteristics of the SBSL treated samples using Huh7 liver cell lines.Based on obtained quantitative data as well as scanning electron microscopy analysis of treated samples,the SBSL treatment of the AZ31 alloy has been found highly useful in producing biocompatibility surfaces along with desirable morphological features.

Effect of mechanical anisotropy on material removal rate and surface quality during polishing CdZnTe wafers

The mechanical characters of CdZnTe crystal were investigated by nanoscratch tests, and the effects of mechanical anisotropy on the material removal rate and surface quality were studied by polishing tests. There is a peak of frictional coefficient at the early stage of scratch, and increasing the vertical force will result in the increase of peak value correspondingly. The fluctuation phenomenon of frictional coefficient is generated at high vertical force. The lateral forces show the apparent twofold and threefold symmetries on （110） and （111） planes, respectively. To obtain high surface quality, low polishing pressure and hard direction （〈 T10 〉 directions on （110） plane and 〈 112 〉 directions on （111） plane） should be selected, and to achieve high material removal rate, high polishing pressure and soft direction （〈001〉 directions on （110） plane and 〈 121 〉 directions on （111） plane） should be selected.

Material Removal Rate Prediction of Electrical Discharge Machining Process Using Artificial Neural Network

This article presents an Artificial Neural Network （ANN） architecture to model the Electrical Discharge Machining （EDM） process. It is aimed to develop the ANN model using an input-output pattern of raw data collected from an experimental of EDM process, whereas several research objectives have been outlined such as experimenting machining material for selected gap current, identifying machining parameters for ANN variables and selecting appropriate size of data selection. The experimental data （input variables） of copper-electrode and steel-workpiece is based on a selected gap current where pulse on time, pulse off time and sparking frequency have been chosen at optimum value of Material Removal Rate （MRR）. In this paper, the result has significantly demonstrated that the ANN model is capable of predicting the MRR with low percentage prediction error when compared with the experimental result.

Novel model of material removal rate on ultrasonic-assisted chemical mechanical polishing for sapphire

Ultrasonic-assisted chemical mechanical polishing(UA-CMP)can greatly improve the sapphire material removal and surface quality,but its polishing mechanism is still unclear.This paper proposed a novel model of material removal rate(MRR)to explore the mechanism of sapphire UA-CMP.It contains two modes,namely two-body wear and abrasive-impact.Furthermore,the atomic force microscopy(AFM)in-situ study,computational fluid dynamics(CFD)simulation,and polishing experiments were conducted to verify the model and reveal the polishing mechanism.In the AFM in-situ studies,the tip scratched the reaction layer on the sapphire surface.The pit with a 0.22 nm depth is the evidence of two-body wear.The CFD simulation showed that abrasives could be driven by the ultrasonic vibration to impact the sapphire surface at high frequencies.The maximum total velocity and the air volume fraction(AVF)in the central area increased from 0.26 to 0.55 m/s and 20%to 49%,respectively,with the rising amplitudes of 1–3μm.However,the maximum total velocity rose slightly from 0.33 to 0.42 m/s,and the AVF was nearly unchanged under 40–80 r/min.It indicated that the ultrasonic energy has great effects on the abrasive-impact mode.The UA-CMP experimental results exhibited that there was 63.7%improvement in MRR when the polishing velocities rose from 40 to 80 r/min.The roughness of the polished sapphire surface was R_(a)=0.07 nm.It identified that the higher speed achieved greater MRR mainly through the two-body wear mode.This study is beneficial to further understanding the UA-CMP mechanism and promoting the development of UA-CMP technology.

Effect of Electrode Materials on Electric Discharge Machining of 316 L and 17 - 4 PH Stainless Steels

Electric Discharge Machining (EDM) is one of the most efficiently employed non-traditional machining processes for cutting hard-to-cut materials, to geometrically complex shapes that are difficult to machine by conventional machines. In the present work, an experimental investigation has been carried out to study the effect of pulsed current on material removal rate, electrode wear, surface roughness and diameteral overcut in corrosion resistant stainless steels viz., 316 L and 17-4 PH. The materials used for the work were machined with different electrode materials such as copper, copper-tungsten and graphite. It is observed that the output parameters such as material removal rate, electrode wear and surface roughness of EDM increase with increase in pulsed current. The results reveal that high material removal rate have been achieved with copper electrode whereas copper-tungsten yielded lower electrode wear, smooth surface finish and good dimensional accuracy.

熔石英元件磁性复合流体抛光去除特性研究

基于磁性复合流体(Magnetic Compound Fluid,MCF)抛光技术开展了熔石英元件抛光工艺研究,对比了传统MCF和超声辅助MCF(以下简称UMCF)抛光对熔石英材料去除特性的影响,探究了不同抛光时间下MCF和UMCF抛光对熔石英材料去除量/去除率和表面粗糙度的影响,并构建了与抛光应力和抛光时间有关的材料去除率模型。研究结果表明,相较于传统MCF,UMCF在提高材料去除率和降低表面粗糙度方面均有优势。两种抛光方式下材料去除机制均为弹塑性去除,UMCF抛光获得的表面粗糙度相比于MCF抛光优化了68.88%。由于流体动压力和超声振动压力的联合作用,UMCF抛光材料去除率最高可达5.74×10^(-3)mm^(3)/min,相比于MCF抛光提升了4.04倍。MCF和UMCF抛光材料去除率与抛光应力和抛光时间均呈现幂函数相关性,且在UMCF抛光中抛光应力对去除率的影响权重大于MCF抛光。

数模联动的多特征工件加工能耗预测方法研究

在实际切削加工过程中材料去除率是不断变化的,现有将其视为恒量的能耗建模方法难以实现能耗准确预测。为了提高切削过程能耗预测精度,提出了一种基于材料去除率的数模联动加工能耗预测方法。首先,基于切削过程刀具与工件的接触关系分析了切入、完全切入和切出阶段材料去除率变化规律,并对相应的加工能耗特性进行了分析;其次,提出了数据驱动的刀具切入,切出阶段加工能耗预测方法,以及模型驱动的完全切入阶段加工能耗预测方法,实现加工过程能耗准确预测;最后,利用实验案例验证了所提模型及方法的有效性,为今后研究能耗预测精度奠定了基础。

多孔异构材料对实验室废水中COD的吸附作用研究

本文以钙基蒙脱土、十六烷基三甲基溴化铵、十二烷胺、正硅酸乙酯为原料制备蒙脱土多孔异构材料,用蒙脱土多孔异构材料作为吸附剂进行实验室废水中COD有机物吸附去除实验,考察不同条件下所合成的蒙脱土多孔异构材料对实验室废水中COD的去除率,并通过智能水质检测仪、热重分析仪等仪器量化分析蒙脱土多孔异构材料的COD去除率。实验结果表明,有机土/十二胺/正硅酸乙酯的摩尔比为1∶24∶160时,合成的蒙脱土多孔异构材料对废水的吸附作用最大。最佳吸附条件为蒙脱土多孔异构材料用量为30g·L^(-1)、吸附混合液pH值为5.0、污水COD浓度为300mg·L^(-1)、吸附时间为150min,该条件下COD的去除率达到45%;蒙脱土多孔异构材料对废水中COD吸附降解性能稳定,可多次使用。

基于胡麻油工作液电火花成形加工可行性研究

传统的电火花工作液煤油或碳氢矿物油等,存在加工效率低、表面质量差且环境污染和资源消耗等问题。而绿色可持续制造也是当今发展的主要趋势。因此文章提出利用植物油胡麻油为工作液在电火花成形加工中的实验研究,旨在实现绿色可持续电火花加工。研究响应参数电流、脉冲宽度和间隙电压对材料去除率,表面粗糙度值,表面质量的影响规律。实验结果表明,胡麻油在电火花加工过程中表现出显著的性能优势。胡麻油为工作液时,材料去除率显著提高,可获得更好的加工表面,表面裂纹明显减少,重铸层厚度更薄。说明胡麻油具有代替传统工作液的潜质,有望进一步促进绿色电火花加工技术的发展和应用。

Material removal rate of 6H-SiC crystal substrate CMP using an alumina(Al_2O_3) abrasive

The influences of the polishing slurry composition,such as the pH value,the abrasive size and its concentration,the dispersant and the oxidants,the rotational velocity of the polishing platen and the carrier and the polishing pressure,on the material removal rate of SiC crystal substrate（0001） Si and a（0001） C surface have been studied based on the alumina abrasive in chemical mechanical polishing（CMP）.The results proposed by our research here will provide a reference for developing the slurry,optimizing the process parameters,and investigating the material removal mechanism in the CMP of SiC crystal substrate.

金属钼圆基片平面研磨及其表面创成机理研究

目的实现金属钼圆基片高效平坦化加工,获得超光滑表面。方法采用游离磨料对钼圆基片进行平面研磨加工,研究磨料种类及研磨盘转速、研磨压力、研磨时间等工艺参数对研磨效果的影响规律,通过材料去除率(MRR)与表面粗糙度(Ra)的建模分析,对比钼材与高硬脆和高塑性材料,揭示其研磨工艺特性、探究其表面创成机理。结果钼圆基片材料去除快慢和表面形貌受各因素作用的综合影响。CeO_(2)磨料适合钼圆基片的研磨加工,材料去除方式为二体、三体摩擦塑性去除;在研磨过程中,MRR随研磨盘转速、研磨压力的递增而先增大后减小,在研磨盘转速为60 r/min、研磨压力为0.026 MPa条件下MRR达到最大;除磨料因素外,其他工艺因素对表面粗糙度的影响较小;MRR和Ra随加工时间的延长而趋于稳定;使用粒径W1 CeO_(2)磨料在研磨盘转速为60 r/min、研磨压力为0.026 MPa下研磨40 min后,表面粗糙度Ra由46 nm降至9.53 nm,MRR达1.16 mg/min。结论采用游离磨料研磨方法在优化工艺条件下可以有效降低表面粗糙度,获得良好表面。

Kinematics constrained five-axis tool path planning for high material removal rate

Traditional five-axis tool path planning methods mostly focus on differential geometric characteristics between the cutter and the workpiece surface to increase the material removal rate(i.e.,by minimizing path length,improving curvature matching,maximizing local cutting width,etc.) . However,material removal rate is not only related to geometric conditions such as the local cutting width,but also constrained by feeding speed as well as the motion capacity of the five-axis machine. This research integrates machine tool kinematics and cutter-workpiece contact kinematics to present a general kinematical model for five-axis machining process. Major steps of the proposed method include:(1) to establish the forward kinematical relationship between the motion of the machine tool axes and the cutter contact point;(2) to establish a tool path optimization model for high material removal rate based on both differential geometrical property and the contact kinematics between the cutter and workpiece;(3) to convert cutter orientation and cutting direction optimization problem into a concave quadratic planning(QP) model. Tool path will finally be generated from the underlying optimal cutting direction field. Through solving the time-optimal trajectory generation problem and machining experiment,we demonstrate the validity and effectiveness of the proposed method.

Material removal rate in chemical-mechanical polishing of wafers based on particle trajectories

Distribution forms of abrasives in the chemical mechanical polishing（CMP） process are analyzed based on experimental results.Then the relationships between the wafer,the abrasive and the polishing pad are analyzed based on kinematics and contact mechanics.According to the track length of abrasives on the wafer surface,the relationships between the material removal rate and the polishing velocity are obtained.The analysis results are in accord with the experimental results.The conclusion provides a theoretical guide for further understanding the material removal mechanism of wafers in CMP.

Effects of the reciprocating parameters of the carrier on material removal rate and non-uniformity in CMP

Based on the Preston equation, the mathematical model of the material removal rate （MRR）, aiming at a line-orbit chemical mechanical polisher, is established. The MRR and the material removal non-uniformity （MRNU） are numerically calculated by MATLAB, and the effects of the reciprocating parameters on the MRR and the MRNU are discussed. It is shown that the smaller the inclination angle and the larger the amplitude, the higher the MRR and the lower the MRNU. The reciprocating speed of the carrier plays a minor role to improve the MRR and decrease the MRNU. The results provide a guide for the design of a polisher and the determination of a process in line-orbit chemical mechanical polishing.

低温微磨料气射流加工的硬脆材料耐冲蚀性能对比

低温微磨料气射流加工硬脆材料时,其变脆易被冲蚀去除。对碳化硅(SiC)、氮化硅(Si3N4)、钇稳定氧化锆(YSZ)、99氧化铝(99 Al2O3)、石英玻璃5种硬脆材料进行低温微磨料气射流加工对比实验,探究加工压力、冲击加工角度及加工次数等工艺参数对5种硬脆材料的冲蚀去除率、低温冲蚀槽三维形貌及表面轮廓的影响,优选出低温下耐冲蚀性能良好的硬脆材料。结果表明:随着加工压力和加工次数增加,5种材料的冲蚀去除率都不断增大;随着冲击加工角度变化,5种材料的低温冲蚀槽体积也在变化,并在加工角度为90°的垂直加工角度附近时达到最大;在相同的加工工艺参数下,Si_(3)N_(4)材料的冲蚀去除率最小,其最大低温冲蚀槽深度只有20μm,SiC材料的与其相差不大,YSZ和99 Al_(2)O_(3)的冲蚀去除率依次增大,但石英玻璃材料的冲蚀去除率最大且远大于其他4种材料的。同时,Si3N4的低温冲蚀槽槽形不明显,且其表面较平整,去除量最小,因而耐冲蚀性能最佳。

半导体碳化硅衬底的湿法氧化

半导体碳化硅(4H-SiC)材料具有硬度高、脆性大、化学性质稳定等特点,一般使用化学机械抛光工艺来加工4H-SiC以获得超光滑平坦表面。湿法氧化作为单晶4H-SiC化学机械抛光的重要过程,直接影响着化学机械抛光的速率和表面质量。本文综述了目前单晶4H-SiC湿法氧化的研究现状,讨论了4H-SiC湿法氧化工艺所选用的氧化剂,如KMnO_(4)、H_(2)O_(2)、K_(2)S_(2)O_(8)等。在此基础上,进一步总结了常用的氧化增效方法,如光催化辅助氧化、电化学氧化、芬顿反应等,并从理论计算的角度分析了单晶4H-SiC湿法氧化的机理,最后展望了4H-SiC湿法氧化未来的研究方向。

单晶碳化硅电化学机械抛光液的组分设计与优化

单晶碳化硅具有高硬度和高化学惰性,化学机械抛光方法难以同时保证其加工效率和表面质量。电化学机械抛光具有较高的材料去除率,是加工碳化硅的一种有效方法。然而,目前针对碳化硅电化学机械抛光液的相关研究还较为缺乏。为此,首先通过单因素实验确定电化学机械抛光液中导电介质和磨粒种类,然后分析导电介质和磨粒浓度以及抛光液pH值对材料去除率和表面粗糙度的影响规律,最终确定抛光液的最佳参数。结果表明:在抛光液以NaCl为导电介质,SiO_(2)为抛光磨粒时,碳化硅具有较好的抛光效率和表面质量,其材料去除率和表面粗糙度随着NaCl浓度的增大而增大,随着磨粒浓度的增加先增大后趋于稳定;当NaCl浓度为0.6 mol/L、SiO_(2)质量分数为6%、抛光液pH值为7时,可以兼顾碳化硅抛光的材料去除率和表面粗糙度Sa,其值分别为2.388μm/h和0.514 nm。

单晶SiC基片干式摩擦化学机械抛光初探

针对碳化硅(SiC)基片在抛光过程中效率低、费用高、环境污染大等问题,提出了一种在干式状态下对SiC基片进行摩擦化学机械抛光的方法(dry tribochemical mechanical polishing,DTCMP)。探究不同工艺参数(磨料种类、磨粒粒径、磨粒含量、抛光盘转速、抛光载荷、固相氧化剂含量)对单晶SiC基片抛光效率和表面质量的影响规律。研究结果表明:金刚石磨粒更适合SiC的摩擦化学机械抛光;当磨粒粒径为W1,磨粒质量为4 g,抛光盘转速为70r/min,抛光载荷为20.685 k Pa,固相氧化剂过碳酸钠添加量为10g时,其为最优工艺参数。采用最优工艺参数对表面粗糙度约为20nm的单晶6H-SiC基片进行干式抛光加工,最终获得表面粗糙度R_(a)为3.214 nm。DTCMP方法抛光SiC基片比水基抛光法热量损失少,所产生的界面温度更高,反应所需的活化能更低,可以实现SiC基片的绿色、高效和高质量抛光。

涡轮盘榫槽电火花线切割加工质量研究

为了提高涡轮叶盘榫槽电火花加工的材料去除率、几何形状精度,文中采用3种相同直径、不同材质的电极丝,进行电火花线切割GH4169枞树形榫槽的对比实验。采用不同工艺规准下的3道线切割工艺:第一次切割使用较大脉冲能量,加工出外形轮廓;第二次切割消除工件在上次加工中产生的变形,提高工件尺寸精度;第三次切割对工件表面进行精修整,减小工件表面变质层。对加工后榫槽进行材料去除率的计算、几何形状精度和轮廓偏差的测量,分析电火花线切割加工对榫槽加工质量的影响。试验结果表明:在高速线加工下榫槽的材料去除率最高;不同电极丝加工后的榫槽几何形状精度均在要求的0.075 mm之内;线切割加工的榫槽轮廓偏差都在0.030 mm左右,同时采用黄铜丝加工的榫槽轮廓偏差最小。采用电火花线切割工艺加工出的榫槽几何形状精度和加工质量均满足加工要求,显示出该工艺巨大的技术潜力。