The wedge-shaped and leaf-type silicon light-emitting devices(LED)are designed and fabricated with the Singapore Chartered Semi Inc.'s dual-gate standard 0.35μm CMOS process.The basic structure of the two devices...The wedge-shaped and leaf-type silicon light-emitting devices(LED)are designed and fabricated with the Singapore Chartered Semi Inc.'s dual-gate standard 0.35μm CMOS process.The basic structure of the two devices is N well-P+ junction.P+ area is the wedge-shaped structure,which is embedded in N well.The leaf-type silicon LED device is a combination of the three wedge-shaped LED devices.The main difference between the two devices is their different electrode distribution,which is mainly in order to analyze the application of electric field confinement(EFC).The devices' micrographs were measured with the Olympus IC test microscope.The forward and reverse bias electrical characteristics of the devices were tested.Light measurements of the devices show that the electrode layout is very important when the electric field confinement is applied.展开更多
基金National Natural Science Foundation Subject(60536030,60676038)Tianjin Key Basic Research Project(06YFJZJC00200)
文摘The wedge-shaped and leaf-type silicon light-emitting devices(LED)are designed and fabricated with the Singapore Chartered Semi Inc.'s dual-gate standard 0.35μm CMOS process.The basic structure of the two devices is N well-P+ junction.P+ area is the wedge-shaped structure,which is embedded in N well.The leaf-type silicon LED device is a combination of the three wedge-shaped LED devices.The main difference between the two devices is their different electrode distribution,which is mainly in order to analyze the application of electric field confinement(EFC).The devices' micrographs were measured with the Olympus IC test microscope.The forward and reverse bias electrical characteristics of the devices were tested.Light measurements of the devices show that the electrode layout is very important when the electric field confinement is applied.
