针对目前硅基光电子芯片缺失片上光源这一问题,设计了一种基于波导倏逝耦合的硅基片上量子点激光器。整体结构基于绝缘体上硅(Silicon on Insulator,SOI)平台引入倏逝波耦合结构来完成量子点增益芯片和波导间的耦合,利用布拉格光栅形成...针对目前硅基光电子芯片缺失片上光源这一问题,设计了一种基于波导倏逝耦合的硅基片上量子点激光器。整体结构基于绝缘体上硅(Silicon on Insulator,SOI)平台引入倏逝波耦合结构来完成量子点增益芯片和波导间的耦合,利用布拉格光栅形成激光腔体来完成光放大和波长选择功能。通过Lumerical仿真软件对O波段硅基片上光源的锥形(taper)耦合器结构和布拉格光栅结构进行了优化。结果表明,长142μm的锥形耦合器具有最高的耦合效率;长于30μm的锥形光斑塑形波导可以使光束以更低损耗在片上传输;优化后的布拉格光栅在波导两端的长度为110μm和240μm,分别实现了40%和90%的反射率。两段布拉格光栅形成谐振腔,放大并选择出1.31μm波长。文中设计显著提高了硅基片上光源整体的发光效率并降低了成本,实现了超过98%的耦合效率,且与CMOS(Complementary Metal Oxide Semiconductor)工艺兼容。相关研究结果可为后续工艺设计和实验验证提供数据支持。展开更多
In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are of...In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.展开更多
文摘针对目前硅基光电子芯片缺失片上光源这一问题,设计了一种基于波导倏逝耦合的硅基片上量子点激光器。整体结构基于绝缘体上硅(Silicon on Insulator,SOI)平台引入倏逝波耦合结构来完成量子点增益芯片和波导间的耦合,利用布拉格光栅形成激光腔体来完成光放大和波长选择功能。通过Lumerical仿真软件对O波段硅基片上光源的锥形(taper)耦合器结构和布拉格光栅结构进行了优化。结果表明,长142μm的锥形耦合器具有最高的耦合效率;长于30μm的锥形光斑塑形波导可以使光束以更低损耗在片上传输;优化后的布拉格光栅在波导两端的长度为110μm和240μm,分别实现了40%和90%的反射率。两段布拉格光栅形成谐振腔,放大并选择出1.31μm波长。文中设计显著提高了硅基片上光源整体的发光效率并降低了成本,实现了超过98%的耦合效率,且与CMOS(Complementary Metal Oxide Semiconductor)工艺兼容。相关研究结果可为后续工艺设计和实验验证提供数据支持。
基金Supported by the National Natural Science Foundation of China(NSFC)(61904183,61974152,62104237,62004205)the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Y202057)+1 种基金Shanghai Science and Technology Committee Rising-Star Program(20QA1410500)Shanghai Sail Plans(21YF1455000)。
文摘In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.
