A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz cente...A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz center frequency with an associated gain of 8.5dB and a gain flatness of ＋ /- 0.6dB in the 4-12GHz frequency range.展开更多
A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and...A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.展开更多
8GHz 20W internally matched A1GaN/GaN HEMTs have been developed. The input and output matching net- works are realised with microstrip lines on a 0. 381mm thick alumina substrate. To improve the stability factor K of ...8GHz 20W internally matched A1GaN/GaN HEMTs have been developed. The input and output matching net- works are realised with microstrip lines on a 0. 381mm thick alumina substrate. To improve the stability factor K of the device, a lossy RC network is used at the input of the device. The developed internally matched power amplifier module exhibits 43dBm （20W） power output with a 7.3dB linear gain,38.1% PAIE,and combined power efficiency of 70.6% at 8GHz.展开更多
Direct Digital Synthesis （DDS） chip was used in the design of program controlled power source in this paper. With the accurate control of Dual DDS chips by Micro Controller Unit （MCU）, illter and power amplifier, ...Direct Digital Synthesis （DDS） chip was used in the design of program controlled power source in this paper. With the accurate control of Dual DDS chips by Micro Controller Unit （MCU）, illter and power amplifier, this power source can generate voltage and corrent output with variable frequency, amplitude and phase. There are several advantages of this power source such as high power, high accuiracy, output stable, light and conveaient.展开更多
A kind of remote ultrasonic generating system is designed in this paper.Microcontroller unit(MCU)Kinetis60and direct digital synthesizer(DDS)AD9951constitute the core section of this ultrasonic generating terminal in ...A kind of remote ultrasonic generating system is designed in this paper.Microcontroller unit(MCU)Kinetis60and direct digital synthesizer(DDS)AD9951constitute the core section of this ultrasonic generating terminal in this system.A friendly and easy-operating host computer software is contrived to control the terminal to generate sinusoidal,rectangular and triangular waveform with variable frequency,amplitude and phase through ZigBee wireless transmission protocol.In order to enhance the practical driving ability,this system also includes power amplifier circuit and transformer matching design,which enable the ultrasonic generating terminal to output enough power for applying to different types of ultrasonic energy convertors.Through experimental verification,the host computer can precisely and swiftly control the ultrasonic generating terminal to generate the above three waveforms with variable wave elements.Oscilloscope is used to verify the terminal output performance of this remote system.展开更多
A MIC power amplifier with power combining based on InGaP/GaAs HBT is developed and measured for the application of the latest high power amplifier stage of the X-band. A novel InGaP/GaAs HBT power transistor with an ...A MIC power amplifier with power combining based on InGaP/GaAs HBT is developed and measured for the application of the latest high power amplifier stage of the X-band. A novel InGaP/GaAs HBT power transistor with an on-chip RC stabilization network is used as the power combing cell to improve the stability of the circuit. A compact mi- crostripe line parallel matching network is used to divide and combine the power. By biasing the amplifier at class AB： Vc= 7V, Ic = 230mA,a maximum CW stabile output power of 28.9dBm and a power combine efficiency of 80% are achieved at 8. 1GHz.展开更多
文摘A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz center frequency with an associated gain of 8.5dB and a gain flatness of ＋ /- 0.6dB in the 4-12GHz frequency range.
文摘A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.
文摘8GHz 20W internally matched A1GaN/GaN HEMTs have been developed. The input and output matching net- works are realised with microstrip lines on a 0. 381mm thick alumina substrate. To improve the stability factor K of the device, a lossy RC network is used at the input of the device. The developed internally matched power amplifier module exhibits 43dBm （20W） power output with a 7.3dB linear gain,38.1% PAIE,and combined power efficiency of 70.6% at 8GHz.
文摘Direct Digital Synthesis （DDS） chip was used in the design of program controlled power source in this paper. With the accurate control of Dual DDS chips by Micro Controller Unit （MCU）, illter and power amplifier, this power source can generate voltage and corrent output with variable frequency, amplitude and phase. There are several advantages of this power source such as high power, high accuiracy, output stable, light and conveaient.
文摘A kind of remote ultrasonic generating system is designed in this paper.Microcontroller unit(MCU)Kinetis60and direct digital synthesizer(DDS)AD9951constitute the core section of this ultrasonic generating terminal in this system.A friendly and easy-operating host computer software is contrived to control the terminal to generate sinusoidal,rectangular and triangular waveform with variable frequency,amplitude and phase through ZigBee wireless transmission protocol.In order to enhance the practical driving ability,this system also includes power amplifier circuit and transformer matching design,which enable the ultrasonic generating terminal to output enough power for applying to different types of ultrasonic energy convertors.Through experimental verification,the host computer can precisely and swiftly control the ultrasonic generating terminal to generate the above three waveforms with variable wave elements.Oscilloscope is used to verify the terminal output performance of this remote system.
文摘A MIC power amplifier with power combining based on InGaP/GaAs HBT is developed and measured for the application of the latest high power amplifier stage of the X-band. A novel InGaP/GaAs HBT power transistor with an on-chip RC stabilization network is used as the power combing cell to improve the stability of the circuit. A compact mi- crostripe line parallel matching network is used to divide and combine the power. By biasing the amplifier at class AB： Vc= 7V, Ic = 230mA,a maximum CW stabile output power of 28.9dBm and a power combine efficiency of 80% are achieved at 8. 1GHz.
