Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE (GSMBE) is studied by photoluminescence spectroscopy and Raman scattering spectroscopy. An abnormal band in photoluminescence is found in an intermedi...Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE (GSMBE) is studied by photoluminescence spectroscopy and Raman scattering spectroscopy. An abnormal band in photoluminescence is found in an intermediate range of Lsi between 1.9 nm-2.9 nm for samples with LGe fixed at 1.5 ml. In contrast to a pure-Ge/Si quantum well, the energy of the band shows red-shift as Lsi increases. Raman scattering shows that Si-Si vibration related Raman shift reaches a minimum for samples with strongest PL intensity of the abnormal band. It is therefore concluded that the abnormal band is related with strain relaxation process.展开更多
We report a detailed theoretical study of current oscillation and de-voltage-controlled chaotic dynamics in doped GaAs/AlAs resonant tunneling superlattices under crossed electric and magnetic fields. When the superla...We report a detailed theoretical study of current oscillation and de-voltage-controlled chaotic dynamics in doped GaAs/AlAs resonant tunneling superlattices under crossed electric and magnetic fields. When the superlattice is biased at the negative differential velocity region, current self-oscillation is observed with proper doping concentration. The current oscillation mode and oscillation frequency can be affected by the dc voltage bias, doping density, and magnetic field. When an ac electric field with fixed amplitude and frequency is also applied to the system, different nonlinear properties show up in the external circuit with the change of dc voltage bias. We carefully study these nonlinear properties with different chaos-detecting methods.展开更多
Using an excitonic basis, we investigate the intraband polarization, optical absorption spectra, and terahertzemission of semiconductor superlattice with the density matrix theory. The excitonic Bloch oscillation is d...Using an excitonic basis, we investigate the intraband polarization, optical absorption spectra, and terahertzemission of semiconductor superlattice with the density matrix theory. The excitonic Bloch oscillation is driven by thedc and ac electric fields. The slow variation in the intraband polarization depends on the ac electric field frequency. Theintraband polarization increases when the ac electric field frequency is below the Bloch frequency. When the ac electricfield frequency is above the Bloch frequency, the intraband polarization downwards and its intensity decreases. Thesatellite structures in the optical absorption spectra are presented. Due to excitonic dynamic localization, the emissionlines of terahertz shift in different ac electric field and dc electric field.展开更多
The authors first establish a quantum microscopic scattering matrix model in multidimen-sional wave-vector space, which relates the phase space density of each superlattice cell withthat of the neighbouring cells. The...The authors first establish a quantum microscopic scattering matrix model in multidimen-sional wave-vector space, which relates the phase space density of each superlattice cell withthat of the neighbouring cells. Then, in the limit of a large number of cells, a SHE (SphericalHarmonics Expansion)-type model of diffusion equations for the particle number density in theposition-energy space is obtained. The crucial features of diffusion constants on retaining thememory of the quantum scattering characteristics of the superlattice elementary cell (like e.g.transmission resonances) are shown in order. Two examples are treated with the analyticallycomputation of the diffusion constants.展开更多
文摘Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE (GSMBE) is studied by photoluminescence spectroscopy and Raman scattering spectroscopy. An abnormal band in photoluminescence is found in an intermediate range of Lsi between 1.9 nm-2.9 nm for samples with LGe fixed at 1.5 ml. In contrast to a pure-Ge/Si quantum well, the energy of the band shows red-shift as Lsi increases. Raman scattering shows that Si-Si vibration related Raman shift reaches a minimum for samples with strongest PL intensity of the abnormal band. It is therefore concluded that the abnormal band is related with strain relaxation process.
基金The project supported by the National Fund for Distinguished Young Scholars of China under Grant No. 60425415, the Major Project of National Natural Science Foundation of China under Grant No. 10390162, and the Shanghai Municipal Commission of Science and Technology under Grant Nos. 03JC14082 and 05XD14020
文摘We report a detailed theoretical study of current oscillation and de-voltage-controlled chaotic dynamics in doped GaAs/AlAs resonant tunneling superlattices under crossed electric and magnetic fields. When the superlattice is biased at the negative differential velocity region, current self-oscillation is observed with proper doping concentration. The current oscillation mode and oscillation frequency can be affected by the dc voltage bias, doping density, and magnetic field. When an ac electric field with fixed amplitude and frequency is also applied to the system, different nonlinear properties show up in the external circuit with the change of dc voltage bias. We carefully study these nonlinear properties with different chaos-detecting methods.
基金Supported by National Science Foundation of China under Grant No.10647132the Scientific Research Fund of Hunan Provincial Education Department under Grant No.05B014
文摘Using an excitonic basis, we investigate the intraband polarization, optical absorption spectra, and terahertzemission of semiconductor superlattice with the density matrix theory. The excitonic Bloch oscillation is driven by thedc and ac electric fields. The slow variation in the intraband polarization depends on the ac electric field frequency. Theintraband polarization increases when the ac electric field frequency is below the Bloch frequency. When the ac electricfield frequency is above the Bloch frequency, the intraband polarization downwards and its intensity decreases. Thesatellite structures in the optical absorption spectra are presented. Due to excitonic dynamic localization, the emissionlines of terahertz shift in different ac electric field and dc electric field.
基金Project supported by the TMR network No.ERB FMBX CT97 0157 on‘Asymptotic methods in kinetic theory'of the European Community,the LIAMA(Laboratoire d'Informatique,Automatique et Mathematiques Appliquees),the PRA(Programme de Recherches Avancees),the Aust
文摘The authors first establish a quantum microscopic scattering matrix model in multidimen-sional wave-vector space, which relates the phase space density of each superlattice cell withthat of the neighbouring cells. Then, in the limit of a large number of cells, a SHE (SphericalHarmonics Expansion)-type model of diffusion equations for the particle number density in theposition-energy space is obtained. The crucial features of diffusion constants on retaining thememory of the quantum scattering characteristics of the superlattice elementary cell (like e.g.transmission resonances) are shown in order. Two examples are treated with the analyticallycomputation of the diffusion constants.
