A series of conjugated copolymers of 9,9-dioctylfluorene and symmetrical pyrazine unit (BY) were synthesized by Suzuki copolymerization and were used as novel light-emitting materials in PLEDs.Efficient energy transfe...A series of conjugated copolymers of 9,9-dioctylfluorene and symmetrical pyrazine unit (BY) were synthesized by Suzuki copolymerization and were used as novel light-emitting materials in PLEDs.Efficient energy transfer was observed in both thin film and solution.Compared with the lowest occupied molecular orbital (LUMO) energy level of the polyfluorenes homopolymer (PFO),the lower LUMO energy levels of copolymers indicated that the introduction of the BY unit would be benefit to electron injection.The turn-on voltages of their single-layer electroluminescent (EL) devices (ITO/PEDOT/polymer/LiF/Al) were at 6.1-4.0 V,which were much lower than that of PFO (7.0 V).The maximum brightness,current efficiency,and external quantum efficiency of all PFBY copolymers were higher than those of the PFO homopolymer.The single-layer device of PFBY5 was the best one in the copolymers,with a maximum brightness of 485 cd/m2,a current efficiency of 0.29 cd/A,and an external quantum efficiency of 0.10%.The introduction of PVK and TPBI for the multilayer device of PFBY5 increased the device efficiencies,which showed a maximum brightness of 3012 cd/m2,a maximum current efficiency of 1.81 cd/A,and an external quantum efficiency of 0.66%.展开更多
The fabrication of heterostructures of two-dimensional semiconductors with specific bandgaps is an important approach to realizing the full potential of these materials in electronic and optoelectronic devices. Severa...The fabrication of heterostructures of two-dimensional semiconductors with specific bandgaps is an important approach to realizing the full potential of these materials in electronic and optoelectronic devices. Several groups have recently reported the direct growth of lateral and vertical heterostructures based on monolayers of typical semiconducting transition metal dichalcogenides （TMDCs） such as WSe2, MoSe2, WS2, and MoS2. Here, we demonstrate the single-step direct growth of lateral and vertical heterostructures based on bandgap-tunable Mo1-xWxS2 alloy monolayers by the sulfurization of patterned thin films of WO3 and MoO3. These patterned films are capable of generating a wide variety of concentration gradients by the diffusion of transition metals during the crystal growth phase. Under high temperatures, this leads to the formation of monolayer crystals of Mo1-xWxS2 alloys with various compositions and bandgaps, depending on the positions of the crystals on the substrates. Heterostructures of these alloys are obtained through stepwise changes in the ratio of W/Mo within a single domain during low-temperature growth. The stabilization of the monolayer Mo1-xWxS2 alloys, which often degrade even under gentle conditions, was accomplished by coating the alloys with other monolayers. The present findings demonstrate an efficient means of both studying and optimizing the optical and electrical properties of TMDC-based heterostructures to allow use of the materials in future device applications.展开更多
We report a small molecule host of 4,4(-N,N)-dicarbazole-biphenyl(CBP) doped with 8% tris(2-phenylpyridine) iridium(Irppy3) for use in efficient green phosphorescent organic light-emitting devices(PHOLEDs) combined wi...We report a small molecule host of 4,4(-N,N)-dicarbazole-biphenyl(CBP) doped with 8% tris(2-phenylpyridine) iridium(Irppy3) for use in efficient green phosphorescent organic light-emitting devices(PHOLEDs) combined with different electron transport layers of Alq and BAlq. The PHOLEDs exhibit maximum current efficiency and power efficiency of 19.8 cd/A and 6.21 lm/W, respectively. The high performance of such PHOLEDs is attributed to the better electron mobile ability of BAlq and sub-monolayer quinacridone(QAD) as carrier trapping layer and equal charge carrier mobilities of hole and electron to form the broad carrier recombination zone in the emitting layer, which can 1reduce the triplet-triplet annihilation and improve the efficiency of the device.展开更多
基金supported by the National Natural Science Foundation of China (50803062,60977026 & 20904055)the Science Fund for Creative Research Groups (20621401)the Natural Basic Research Foundation of China (973 Program,2009CB623601)
文摘A series of conjugated copolymers of 9,9-dioctylfluorene and symmetrical pyrazine unit (BY) were synthesized by Suzuki copolymerization and were used as novel light-emitting materials in PLEDs.Efficient energy transfer was observed in both thin film and solution.Compared with the lowest occupied molecular orbital (LUMO) energy level of the polyfluorenes homopolymer (PFO),the lower LUMO energy levels of copolymers indicated that the introduction of the BY unit would be benefit to electron injection.The turn-on voltages of their single-layer electroluminescent (EL) devices (ITO/PEDOT/polymer/LiF/Al) were at 6.1-4.0 V,which were much lower than that of PFO (7.0 V).The maximum brightness,current efficiency,and external quantum efficiency of all PFBY copolymers were higher than those of the PFO homopolymer.The single-layer device of PFBY5 was the best one in the copolymers,with a maximum brightness of 485 cd/m2,a current efficiency of 0.29 cd/A,and an external quantum efficiency of 0.10%.The introduction of PVK and TPBI for the multilayer device of PFBY5 increased the device efficiencies,which showed a maximum brightness of 3012 cd/m2,a maximum current efficiency of 1.81 cd/A,and an external quantum efficiency of 0.66%.
文摘The fabrication of heterostructures of two-dimensional semiconductors with specific bandgaps is an important approach to realizing the full potential of these materials in electronic and optoelectronic devices. Several groups have recently reported the direct growth of lateral and vertical heterostructures based on monolayers of typical semiconducting transition metal dichalcogenides （TMDCs） such as WSe2, MoSe2, WS2, and MoS2. Here, we demonstrate the single-step direct growth of lateral and vertical heterostructures based on bandgap-tunable Mo1-xWxS2 alloy monolayers by the sulfurization of patterned thin films of WO3 and MoO3. These patterned films are capable of generating a wide variety of concentration gradients by the diffusion of transition metals during the crystal growth phase. Under high temperatures, this leads to the formation of monolayer crystals of Mo1-xWxS2 alloys with various compositions and bandgaps, depending on the positions of the crystals on the substrates. Heterostructures of these alloys are obtained through stepwise changes in the ratio of W/Mo within a single domain during low-temperature growth. The stabilization of the monolayer Mo1-xWxS2 alloys, which often degrade even under gentle conditions, was accomplished by coating the alloys with other monolayers. The present findings demonstrate an efficient means of both studying and optimizing the optical and electrical properties of TMDC-based heterostructures to allow use of the materials in future device applications.
基金supported by the Major Project of Science and Technology Office of Fujian Province of China(No.2014H0042)the Natural Science Foundation of Fujian Province of China(No.2015J01664)+1 种基金the Project of Science and Technology Research of Quanzhou in Fujian Province of China(Nos.2013Z125 and 2014Z137)the 2016 Annual National or Ministries Preparatory Research Foundation Project in Quanzhou Normal University(No.2016YYKJ21)
文摘We report a small molecule host of 4,4(-N,N)-dicarbazole-biphenyl(CBP) doped with 8% tris(2-phenylpyridine) iridium(Irppy3) for use in efficient green phosphorescent organic light-emitting devices(PHOLEDs) combined with different electron transport layers of Alq and BAlq. The PHOLEDs exhibit maximum current efficiency and power efficiency of 19.8 cd/A and 6.21 lm/W, respectively. The high performance of such PHOLEDs is attributed to the better electron mobile ability of BAlq and sub-monolayer quinacridone(QAD) as carrier trapping layer and equal charge carrier mobilities of hole and electron to form the broad carrier recombination zone in the emitting layer, which can 1reduce the triplet-triplet annihilation and improve the efficiency of the device.
